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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by MJE18008/D Designer'sTM Data Sheet SWITCHMODETM MJE18008 * MJF18008 * *Motorola Preferred Device NPN Bipolar Power Transistor For Switching Power Supply Applications The MJE/MJF18008 have an applications specific state-of-the-art die designed for use in 220 V line-operated Switchmode Power supplies and electronic light ballasts. These high voltage/high speed transistors offer the following: * Improved Efficiency Due to Low Base Drive Requirements: -- High and Flat DC Current Gain hFE -- Fast Switching -- No Coil Required in Base Circuit for Turn-Off (No Current Tail) * Tight Parametric Distributions are Consistent Lot-to-Lot * Two Package Choices: Standard TO-220 or Isolated TO-220 * MJF18008, Case 221D, is UL Recognized at 3500 VRMS: File #E69369 MAXIMUM RATINGS POWER TRANSISTOR 8.0 AMPERES 1000 VOLTS 45 and 125 WATTS IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII II I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I I IIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII III I I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIIIIIIIIIIIIIIIIIIIIIII III I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII IIII III I I I I IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII IIIIII I I IIII II IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII III I I I I I IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II III I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I II IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIII I IIIIIIIIIIIIIIIIIIIIIIII I IIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIII II IIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIII I I IIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIII Rating Symbol VCEO VCES VEBO IC ICM IB IBM MJE18008 MJF18008 Unit Vdc Vdc Vdc Adc Adc Collector-Emitter Sustaining Voltage Emitter-Base Voltage 450 9.0 8.0 16 4.0 8.0 Collector-Emitter Breakdown Voltage Collector Current -- Continuous -- Peak(1) Base Current -- Continuous -- Peak(1) 1000 CASE 221A-06 TO-220AB MJE18008 RMS Isolation Voltage(2) Test No. 1 Per Fig. 22a (for 1 sec, R.H. < 30%, Test No. 1 Per Fig. 22b TC = 25_C) Test No. 1 Per Fig. 22c Total Device Dissipation (TC = 25C) Derate above 25_C Operating and Storage Temperature VISOL -- -- -- 4500 3500 1500 45 0.36 Volts PD 125 1.0 Watts W/_C TJ, Tstg - 65 to 150 _C THERMAL CHARACTERISTICS Rating Symbol RJC RJA TL MJE18008 1.0 62.5 MJF18008 2.78 62.5 Unit Thermal Resistance -- Junction to Case -- Junction to Ambient Maximum Lead Temperature for Soldering Purposes: 1/8 from Case for 5 Seconds _C/W _C 260 CASE 221D-02 ISOLATED TO-220 TYPE UL RECOGNIZED MJF18008 ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise specified) Characteristic OFF CHARACTERISTICS Symbol Min Typ Max Unit Collector-Emitter Sustaining Voltage (IC = 100 mA, L = 25 mH) Collector Cutoff Current (VCE = Rated VCEO, IB = 0) Collector Cutoff Current (VCE = Rated VCES, VEB = 0) Collector Cutoff Current (VCE = 800 V, VEB = 0) VCEO(sus) ICEO ICES 450 -- -- -- -- -- -- -- -- -- -- -- -- Vdc 100 100 500 100 100 Adc Adc (TC = 125_C) (TC = 125_C) Emitter Cutoff Current (VEB = 9.0 Vdc, IC = 0) (1) Pulse Test: Pulse Width = 5.0 ms, Duty Cycle 10%. (2) Proper strike and creepage distance must be provided. v IEBO Adc (continued) Designer's Data for "Worst Case" Conditions -- The Designer's Data Sheet permits the design of most circuits entirely from the information presented. SOA Limit curves -- representing boundaries on device characteristics -- are given to facilitate "worst case" design. Preferred devices are Motorola recommended choices for future use and best overall value. Designer's and SWITCHMODE are trademarks of Motorola, Inc. REV 1 (c) Motorola, Inc. 1995 Motorola Bipolar Power Transistor Device Data 1 IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIII I I I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I I I IIII I I I I II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I 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IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII I I I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII I II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIII I I I IIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII II I I I IIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIIII MJE18008 MJF18008 SWITCHING CHARACTERISTICS: Inductive Load (Vclamp = 300 V, VCC = 15 V, L = 200 H) SWITCHING CHARACTERISTICS: Resistive Load (D.C. DYNAMIC CHARACTERISTICS ON CHARACTERISTICS ELECTRICAL CHARACTERISTICS -- continued (TC = 25_C unless otherwise specified) DC Current Gain (IC = 10 mAdc, VCE = 5.0 Vdc) DC Current Gain (IC = 2.0 Adc, VCE = 1.0 Vdc) DC Current Gain (IC = 4.5 Adc, VCE = 1.0 Vdc) Base-Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc) Base-Emitter Saturation Voltage (IC = 4.5 Adc, IB = 0.9 Adc) Crossover Time Storage Time Fall Time Crossover Time Storage Time Fall Time Turn-Off Time Turn-On Time Turn-Off Time Turn-On Time Dynamic Saturation Voltage: Input Capacitance (VEB = 8.0 V) Output Capacitance (VCB = 10 Vdc, IE = 0, f = 1.0 MHz) Current Gain Bandwidth (IC = 0.5 Adc, VCE = 10 Vdc, f = 1.0 MHz) DC Current Gain (IC = 1.0 Adc, VCE = 5.0 Vdc) Collector-Emitter Saturation Voltage (IC = 2.0 Adc, IB = 0.2 Adc) 2 (IC = 4.5 Adc, IB = 0.9 Adc) Determined 1.0 s and 3.0 s respectively after rising IB1 reaches 90% of final IB1 (see Figure 18) (IC = 4.5 Adc, IB1 = 0.9 Adc, IB2 = 2.25 Adc, VCC = 300 V) (IC = 2.0 Adc, IB1 = 0.2 Adc, IB2 = 1.0 Adc, VCC = 300 V) (IC = 4.5 Adc, IB1 = 0.9 Adc, IB2 = 2.25 Adc) (IC = 2.0 Adc, IB1 = 0.2 Adc, IB2 = 1.0 Adc) Characteristic (IC = 2.0 Adc IB1 = 200 mAdc VCC = 300 V) (IC = 5.0 Adc IB1 = 1.0 Adc VCC = 300 V) 1.0 s 3.0 s 1.0 s 3.0 s (TC = 125_C) (TC = 125_C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125C) (TC = 125_C) (TC = 125_C) (TC = 125_C) v 10%, Pulse Width = 20 s) VCE(dsat) VCE(sat) VBE(sat) Symbol Motorola Bipolar Power Transistor Device Data Cob hFE Cib ton ton toff toff tsi tsi fT tfi tc tfi tc Min 14 -- 6.0 5.0 11 11 10 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- 1750 0.3 0.3 0.35 0.4 0.82 0.92 11.5 14.5 5.5 11.5 Typ 85 135 210 250 250 230 100 120 100 250 200 190 100 2.0 2.6 1.5 1.9 1.6 2.0 1.2 1.5 2.4 9.0 3.5 6.5 13 -- 28 9.0 8.0 15 16 20 2500 0.6 0.65 0.7 0.8 1.1 1.25 2.75 -- Max 300 -- 150 -- 350 -- 180 -- 180 -- 300 -- 150 3.2 -- 2.5 -- 2.5 -- 34 -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- MHz Unit Vdc Vdc Vdc pF pF s s s s ns ns ns ns ns -- ns MJE18008 MJF18008 TYPICAL STATIC CHARACTERISTICS 100 VCE = 1 V h FE , DC CURRENT GAIN 100 VCE = 5 V h FE , DC CURRENT GAIN TJ = 125C TJ = 25C 10 TJ = - 20C TJ = 125C TJ = 25C 10 TJ = - 20C 1 0.01 0.1 1 10 1 0.01 0.1 1 10 IC, COLLECTOR CURRENT (AMPS) IC, COLLECTOR CURRENT (AMPS) Figure 1. DC Current Gain @ 1 Volt Figure 2. DC Current Gain @ 5 Volts 2 TJ = 25C V CE , VOLTAGE (VOLTS) V CE , VOLTAGE (VOLTS) 1.5 IC = 1 A 3A 5A 8 A 10 A 10 1 1 0.1 IC/IB = 10 IC/IB = 5 0.5 0 0.01 0.1 1 10 0.01 0.01 TJ = 25C TJ = 125C 0.1 1 10 IC COLLECTOR CURRENT (AMPS) IB, BASE CURRENT (AMPS) Figure 3. Collector Saturation Region Figure 4. Collector-Emitter Saturation Voltage 1.3 1.2 V BE , VOLTAGE (VOLTS) 1.1 10000 Cib 1000 C, CAPACITANCE (pF) TJ = 25C f = 1 MHz 1 0.9 0.8 0.7 TJ = 25C 0.6 0.5 TJ = 125C 0.4 0.01 0.1 1 IC/IB = 5 IC/IB = 10 10 100 Cob 10 1 1 10 100 1000 IC, COLLECTOR CURRENT (AMPS) VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 5. Base-Emitter Saturation Region Figure 6. Capacitance Motorola Bipolar Power Transistor Device Data 3 MJE18008 MJF18008 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 1500 IB(off) = IC/2 VCC = 300 V PW = 20 s 1000 t, TIME (ns) IC/IB = 5 IC/IB = 10 500 TJ = 125C TJ = 25C 4500 4000 3500 3000 t, TIME (ns) 2500 2000 IC/IB = 10 1500 1000 500 0 0 1 2 3 4 5 6 7 8 IC, COLLECTOR CURRENT (AMPS) 0 1 2 3 4 5 6 7 8 IC, COLLECTOR CURRENT (AMPS) IC/IB = 5 TJ = 25C TJ = 125C IB(off) = IC/2 VCC = 300 V PW = 20 s Figure 7. Resistive Switching, ton 3500 3000 2500 t, TIME (ns) 2000 1500 1000 500 0 1 2 TJ = 25C TJ = 125C 3 4 IC/IB = 5 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 5000 4500 4000 t si , STORAGE TIME (ns) 3500 3000 2500 2000 1500 1000 IC/IB = 10 5 6 7 8 500 0 3 4 Figure 8. Resistive Switching, toff TJ = 25C TJ = 125C IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H IC = 2 A 5 6 IC = 4.5 A 7 8 9 10 11 12 13 14 15 IC COLLECTOR CURRENT (AMPS) hFE, FORCED GAIN Figure 9. Inductive Storage Time, tsi Figure 10. Inductive Storage Time, tsi(hFE) 400 350 300 t, TIME (ns) 250 200 150 100 50 0 1 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 2 3 4 5 6 IC, COLLECTOR CURRENT (AMPS) tfi tc t, TIME (ns) 300 TJ = 25C TJ = 125C 250 tfi tc 150 IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 200 100 TJ = 25C TJ = 125C 7 8 50 1 2 3 4 5 6 7 8 IC, COLLECTOR CURRENT (AMPS) Figure 11. Inductive Switching, tc and tfi IC/IB = 5 Figure 12. Inductive Switching, tc and tfi IC/IB = 10 4 Motorola Bipolar Power Transistor Device Data MJE18008 MJF18008 TYPICAL SWITCHING CHARACTERISTICS (IB2 = IC/2 for all switching) 160 150 140 t fi , FALL TIME (ns) 130 120 110 100 90 80 70 60 3 4 5 TJ = 25C TJ = 125C 6 7 8 9 10 11 12 13 14 15 hFE, FORCED GAIN IC = 4.5 A IC = 2 A IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H 400 350 TC , CROSSOVER TIME (ns) 300 250 200 150 100 50 3 4 5 IC = 4.5 A TJ = 25C TJ = 125C 6 7 8 9 10 11 12 13 14 15 hFE, FORCED GAIN IC = 2 A IB(off) = IC/2 VCC = 15 V VZ = 300 V LC = 200 H Figure 13. Inductive Fall Time Figure 14. Inductive Crossover Time GUARANTEED SAFE OPERATING AREA INFORMATION 100 DC (MJE18008) I C , COLLECTOR CURRENT (AMPS) 5 ms 10 EXTENDED SOA 1 DC (MJF18008) 0.1 1 ms 10 s 1 s I C , COLLECTOR CURRENT (AMPS) 9 8 7 6 5 4 3 2 1 0 100 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 1000 0 200 400 600 -5V VBE(off) = 0 V -1, 5 V 800 1000 TC 125C IC/IB 4 LC = 500 H 0.01 10 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) Figure 15. Forward Bias Safe Operating Area Figure 16. Reverse Bias Switching Safe Operating Area There are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. Safe operating area curves indicate IC - VCE limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. The data of Figure 15 is based on TC = 25C; TJ(pk) is variable depending on power level. Second breakdown pulse limits are valid for duty cycles to 10% but must be derated when T C > 25C. Second breakdown limitations do not derate the same as thermal limitations. Allowable current at the voltages shown in Figure 15 may be found at any case temperature by using the appropriate curve on Figure 17. TJ(pk) may be calculated from the data in Figure 20 and 21. At any case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. For inductive loads, high voltage and current must be sustained simultaneously during turn-off with the base-to-emitter junction reverse-biased. The safe level is specified as a reverse- biased safe operating area (Figure 16). This rating is verified under clamped conditions so that the device is never subjected to an avalanche mode. 5 1,0 POWER DERATING FACTOR SECOND BREAKDOWN DERATING 0,8 0,6 0,4 THERMAL DERATING 0,2 0,0 20 40 60 80 100 120 140 160 TC, CASE TEMPERATURE (C) Figure 17. Forward Bias Power Derating Motorola Bipolar Power Transistor Device Data MJE18008 MJF18008 5 4 3 2 1 VOLTS 0 -1 -2 -3 -4 -5 0 IB 1 2 90% IB 1 s 3 s 3 4 TIME 5 6 7 8 VCE dyn 1 s dyn 3 s 10 9 8 7 6 5 4 3 2 1 0 0 1 2 3 4 TIME 5 6 7 8 IB 90% IB1 VCLAMP 10% VCLAMP IC tsi tc 10% IC 90% IC tfi Figure 18. Dynamic Saturation Voltage Measurements Figure 19. Inductive Switching Measurements +15 V 1 F 100 3W MTP8P10 100 F VCE PEAK MTP8P10 MPF930 MUR105 +10 V MPF930 A 50 MJE210 COMMON 500 F 150 3W MTP12N10 IB2 RB2 V(BR)CEO(sus) L = 10 mH RB2 = VCC = 20 VOLTS IC(pk) = 100 mA INDUCTIVE SWITCHING L = 200 H RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 RBSOA L = 500 H RB2 = 0 VCC = 15 VOLTS RB1 SELECTED FOR DESIRED IB1 Iout IB RB1 VCE IB1 IC PEAK 150 3W 1 F -Voff Table 1. Inductive Load Switching Drive Circuit 6 Motorola Bipolar Power Transistor Device Data MJE18008 MJF18008 TYPICAL THERMAL RESPONSE 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 0.1 0.05 0.02 SINGLE PULSE 0.01 0.01 0.1 1 t, TIME (ms) P(pk) t2 DUTY CYCLE, D = t1/t2 10 t1 RJC(t) = r(t) RJC RJC = 1.0C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 100 1000 Figure 20. Typical Thermal Response (ZJC(t)) for MJE18008 1 r(t), TRANSIENT THERMAL RESISTANCE (NORMALIZED) D = 0.5 0.2 0.1 P(pk) 0.1 0.05 t1 RJC(t) = r(t) RJC RJC = 2.78C/W MAX D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 TJ(pk) - TC = P(pk) RJC(t) 0.02 0.01 0.01 SINGLE PULSE 0.1 1 10 t, TIME (ms) t2 DUTY CYCLE, D = t1/t2 100 1000 10000 100000 Figure 21. Typical Thermal Response (ZJC(t)) for MJF18008 Motorola Bipolar Power Transistor Device Data 7 MJE18008 MJF18008 TEST CONDITIONS FOR ISOLATION TESTS* MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS MOUNTED FULLY ISOLATED PACKAGE LEADS CLIP CLIP 0.107 MIN 0.107 MIN HEATSINK 0.110 MIN Figure 22a. Screw or Clip Mounting Position for Isolation Test Number 1 HEATSINK HEATSINK Figure 22b. Clip Mounting Position for Isolation Test Number 2 Figure 22c. Screw Mounting Position for Isolation Test Number 3 * Measurement made between leads and heatsink with all leads shorted together MOUNTING INFORMATION** 4-40 SCREW PLAIN WASHER CLIP HEATSINK COMPRESSION WASHER NUT HEATSINK Figure 23a. Screw-Mounted Figure 23b. Clip-Mounted Figure 23. Typical Mounting Techniques for Isolated Package Laboratory tests on a limited number of samples indicate, when using the screw and compression washer mounting technique, a screw torque of 6 to 8 in . lbs is sufficient to provide maximum power dissipation capability. The compression washer helps to maintain a constant pressure on the package over time and during large temperature excursions. Destructive laboratory tests show that using a hex head 4-40 screw, without washers, and applying a torque in excess of 20 in . lbs will cause the plastic to crack around the mounting hole, resulting in a loss of isolation capability. Additional tests on slotted 4-40 screws indicate that the screw slot fails between 15 to 20 in . lbs without adversely affecting the package. However, in order to positively ensure the package integrity of the fully isolated device, Motorola does not recommend exceeding 10 in . lbs of mounting torque under any mounting conditions. ** For more information about mounting power semiconductors see Application Note AN1040. 8 Motorola Bipolar Power Transistor Device Data MJE18008 MJF18008 PACKAGE DIMENSIONS B 4 F C T A S -T- SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. DIMENSION Z DEFINES A ZONE WHERE ALL BODY AND LEAD IRREGULARITIES ARE ALLOWED. Q 123 H K Z L V G D N U R J DIM A B C D F G H J K L N Q R S T U V Z INCHES MIN MAX 0.570 0.620 0.380 0.405 0.160 0.190 0.025 0.035 0.142 0.147 0.095 0.105 0.110 0.155 0.018 0.025 0.500 0.562 0.045 0.060 0.190 0.210 0.100 0.120 0.080 0.110 0.045 0.055 0.235 0.255 0.000 0.050 0.045 --- --- 0.080 BASE COLLECTOR EMITTER COLLECTOR MILLIMETERS MIN MAX 14.48 15.75 9.66 10.28 4.07 4.82 0.64 0.88 3.61 3.73 2.42 2.66 2.80 3.93 0.46 0.64 12.70 14.27 1.15 1.52 4.83 5.33 2.54 3.04 2.04 2.79 1.15 1.39 5.97 6.47 0.00 1.27 1.15 --- --- 2.04 STYLE 1: PIN 1. 2. 3. 4. CASE 221A-06 TO-220AB ISSUE Y -T- F Q A 123 SEATING PLANE NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. DIM A B C D F G H J K L N Q R S U INCHES MIN MAX 0.621 0.629 0.394 0.402 0.181 0.189 0.026 0.034 0.121 0.129 0.100 BSC 0.123 0.129 0.018 0.025 0.500 0.562 0.045 0.060 0.200 BSC 0.126 0.134 0.107 0.111 0.096 0.104 0.259 0.267 MILLIMETERS MIN MAX 15.78 15.97 10.01 10.21 4.60 4.80 0.67 0.86 3.08 3.27 2.54 BSC 3.13 3.27 0.46 0.64 12.70 14.27 1.14 1.52 5.08 BSC 3.21 3.40 2.72 2.81 2.44 2.64 6.58 6.78 -B- C S U H K -Y- G N L D 3 PL M J R 0.25 (0.010) B M Y STYLE 2: PIN 1. BASE 2. COLLECTOR 3. EMITTER CASE 221D-02 (ISOLATED TO-220 TYPE) UL RECOGNIZED: FILE #E69369 ISSUE D Motorola Bipolar Power Transistor Device Data 9 MJE18008 MJF18008 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters can and do vary in different applications. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. How to reach us: USA / EUROPE: Motorola Literature Distribution; P.O. Box 20912; Phoenix, Arizona 85036. 1-800-441-2447 MFAX: RMFAX0@email.sps.mot.com - TOUCHTONE (602) 244-6609 INTERNET: http://Design-NET.com JAPAN: Nippon Motorola Ltd.; Tatsumi-SPD-JLDC, Toshikatsu Otsuki, 6F Seibu-Butsuryu-Center, 3-14-2 Tatsumi Koto-Ku, Tokyo 135, Japan. 03-3521-8315 HONG KONG: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 10 Motorola Bipolar Power Transistor Device Data *MJE18008/D* MJE18008/D |
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