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| Preliminary Product Description Stanford Microdevices' SPA-1318 is a high efficiency GaAs Heterojunction Bipolar Transistor (HBT) amplifier housed in a low-cost surface-mountable plastic package. These HBT amplifiers are fabricated using molecular beam epitaxial growth technology which produces reliable and consistent performance from wafer to wafer and lot to lot. This product is specifically designed for use as a driver amplifier for infrastructure equipment in the 2150 MHz PCS band. Its high linearity makes it an ideal choice for multi-carrier and digital applications. SPA-1318 2150 MHz 1 Watt Power Amplifier with Active Bias Product Features * On-chip Active Bias Control * Power Control Allows Power Consumption Reduction VCC VBIAS RFIN N/C Active Bias * Patented High Reliability GaAsHBT Technology * High Linearity Performance: +48dBm OIP3 Typ. * Surface-Mountable Plastic Package RFOUT/ VCC Input Match Applications * W-CDMA Systems * Multi-Carrier Applications Symbol f0 P 1dB S 21 VSWR OIP3 Icc Rth, j-l Parameters: Test Conditions: Z0 = 50 Ohms Temp = 25C, Vcc = 5.0V Frequency of Operation Output Power at 1dB Compression Small Signal Gain Input VSWR Output Third Order Intercept Point Power out per tone = +14dBm Device Current Thermal Resistance (junction - lead) Units MHz dB m dB dB m mA C/W Min. 2110 Typ. Max. 2170 29.5 11.5 1.4:1 48.0 320 40 The information provided herein is believed to be reliable at press time. Stanford Microdevices assumes no responsibility for inaccuracies or omissions. Stanford Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user's own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Stanford Microdevices does not authorize or warrant any Stanford Microdevices product for use in life-support devices and/or systems. Copyright 2001 Stanford Microdevices, Inc. All worldwide rights reserved. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 1 http://www.stanfordmicro.com EDS-101429 Rev B Preliminary Preliminary SPA-1318 2150 MHz 1 Watt Power Amp. 2150 MHz Application Circuit Data, Icc=320mA, T=+25C, Vcc=5V Note: Tuned for Output IP3 Input/Output Return Loss, Isolation vs Frequency 0 -5 -1 0 -1 5 14 13 Gain vs. Frequency S22 dB 12 11 10 dB -2 0 -2 5 -3 0 -3 5 -4 0 2 .1 1 S11 S12 9 8 2.11 25C -40 C 85C 2.1 2 2.13 2 .1 4 2 .1 5 2 .1 6 2 .17 2 .1 2 2 .1 3 2 .1 4 2 .1 5 2 .1 6 2 .1 7 GHz GHz 32 31 30 29 P1dB vs Frequency 25C -40C 85C dBm 60 55 50 OIP3 vs. Frequency (POUT per tone = 14dBm) dBm 45 40 28 27 2.11 2.12 2.13 2.14 2.15 2.16 2.17 35 30 2 .1 1 25C -40 C 85C 2 .1 2 2 .1 3 2 .1 4 2 .1 5 2 .1 6 2 .1 7 GHz GHz 60 50 OIP3 vs Tone Power 2.14 GHz 450 400 Device Current vs. Source Voltage 25C -4 0C 85C Device Current (mA) 350 300 250 200 150 100 50 0 40 dBm 30 20 10 0 5 9 13 17 21 25 25C -40C 85C 0 1 2 3 4 5 POUT per tone (dBm) Vcc (V) 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 2 http://www.stanfordmicro.com EDS-101429 Rev B Preliminary Preliminary SPA-1318 2150 MHz 1 Watt Power Amp. 850-950 MHz Application Circuit Data (Optimized for IP3), Icc=400mA, T=+25C, Vcc=5V, The W-CDMA setup is PCCPCH+PSCH+SSCH+CPICH+PICH+64 DPCH W-CDMA at 2.14 GHz Adjacent Channel Power vs. Channel Output Power -30 -35 Adjacent Channel Power (dBc) -40 -45 -50 -55 -60 -65 16 19 22 25 Channel Output Power (dBm) W-CDMA at 2.14 GHz 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 3 http://www.stanfordmicro.com EDS-101429 Rev A Preliminary Preliminary SPA-1318 2150 MHz 1 Watt Power Amp. Voltage Feed Resistor Bias Circuit (for 5V supply) Vcc 5.6pF 8.2pF 10uF 1000pF 1.2 nH 360 8.2pF 1 2 3 4 8 7 6 5 15 nH Z=50, 17.6 22pF 1.8pF 68pF 2110 -2170 MHz Schematic Vbias Vcc 10uF Tantalum 1000pF 5.6pF 1.2nH 360 8.2pF 8.2pF 15nH 22pF 1.8pF 68pF ECB-101161 Rev. B SOIC-8 PA Eval Board Vpc 2110 -2170 MHz Evaluation Board Layout 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 4 http://www.stanfordmicro.com EDS-101429 Rev B Preliminary Preliminary SPA-1318 2150 MHz 1 Watt Power Amp. Pin # 1 Function V cc Description VCC is the supply voltage for the active bias network. Bypassing in the appropriate location as shown on application schematic is required for optimum RF performance. Vbias is the bias control pin for the active bias network. Device current is set by the current into this pin. Recommended configuration shown in the Application Schematic is required for optimum RF performance. RF input pin. This pin requires the use of an external DC blocking capacitor. No connection 3 Device Schematic 1 2 V bi as 2 ACTIVE BIAS NETWORK 5-8 3 4 5, 6, 7, 8 RF In N/C RF Out/Vcc RF output and bias pin. Bias should be supplied to this pin through an external RF choke. Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance. Gnd Exposed area on the bottom side of the package needs to be soldered to the ground plane of the board for optimum thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern (page 6). EPAD Absolute Maximum Ratings Operation of this device above any one of these Parameter parameters may cause permanent damage. Supply Current (I ) D Value 750 6.0 4.0 -40 to +85 800 -40 to +150 +150 Unit mA V W C mW C C Bias Conditions should also satisfy the following expression: IDVD (max) < (TJ - TOP)/Rth,j-l Caution: ESD sensitive Appropriate precautions in handling, packaging and testing devices must be observed. Device Voltage (VD) Power Dissipation Operating Lead Temperature (TL) RF Input Power Storage Temperature Range Operating Junction Temperature (TJ) 522 Almanor Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 5 http://www.stanfordmicro.com EDS-101429 Rev A Preliminary Preliminary SPA-1318 2150 MHz 1 Watt Power Amp. Part Number Ordering Information Part Number SPA-1318 Devices Per Reel 500 Reel Siz e 7" .035 [.889] .045 [1.143] 4 3 2 1 Package Outline Drawing .194 [4.93] EXPOSED PAD XXXX SPA 1318 5 6 7 8 TOP VIEW .155 [3.937] .078 [1.969] .236 [5.994] .061 [1.549] BOTTOM VIEW .050 [1.27] .016 [.406] .061 [1.549] .008 [.203] .058 [1.473] .013 [.33] x 45 .008 .194 [4.928] .003 [.076] SIDE VIEW SEATING PLANE SEE DETAIL A .155 [3.937] END VIEW Recommended Land Pattern PARTING LINE .15 [3.81] .025 5 DETAIL A .24 [6.22] .16 [4.02] .33 [8.42] Note: XXXX represents the lot code .05 [1.27] .02 [.60] .11 [2.71] Note: Parts need to be baked prior to use as discussed in application note AN-029 (Special handling information for Exposed Pad TM SOIC-8 products) to ensure no moisture is trapped in the encapsulated package. In production, this baking procedure is not necessary if parts are used within 48 hours of opening the sealed shipping materials. 726 Palomar Ave., Sunnyvale, CA 94085 Phone: (800) SMI-MMIC 6 http://www.stanfordmicro.com EDS-101429 Rev B |
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