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| SKM 111AR Absolute Maximum Ratings Symbol Conditions Values Units Inverse diode SEMITRANSTM M1 Power MOSFET Modules SKM 111AR Characteristics Symbol Conditions min. typ. max. Units Features Inverse diode Typical Applications Thermal characteristics Mechanical data MA 1 20-02-2004 SCT (c) by SEMIKRON SKM 111AR Fig. 1 Rated power dissipation vs. temperature Fig. 2 Maximum safe operating area Fig. 3 Output characteristic Fig. 4 Transfer characteristic Fig. 5 On-resistance vs. temperature Fig. 6 Rated current vs. temperature 2 20-02-2004 SCT (c) by SEMIKRON SKM 111AR Fig. 7 Brakdown voltage vs. temperature Fig. 8 Drain-source voltage derating Fig. 9 Capacitances vs. drain-source voltage Fig. 10 Gate charge characteristic Fig. 11 Diode forward characteristic Fig. 14 Gate-source threshold voltage 3 20-02-2004 SCT (c) by SEMIKRON SKM 111AR UL Recognized File no. E 63 532 Dimensions in mm This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX. This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. 4 20-02-2004 SCT (c) by SEMIKRON |
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