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| HiPerFETTM Power MOSFETs Single Die MOSFET Preliminary data sheet Symbol V DSS VDGR VGS VGSM ID25 IDM IAR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight 1.6 mm (0.063 in.) from case for 10 s Mounting torque Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 M Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM TC = 25C TC = 25C TC = 25C IS IDM, di/dt 100 A/s, VDD VDSS TJ 150C, RG = 2 TC = 25C 50N50 55N50 50N50 55N50 50N50 55N50 VDSS IXFX 50N50 IXFX 55N50 ID25 RDS(on) 500 V 50 A 100 m 500 V 55 A 80 m trr 250 ns Maximum Ratings 500 500 20 30 50 55 200 220 50 55 60 3 5 520 -55 ... +150 150 -55 ... +150 300 1.13/10 6 V V V V PLUS 247TM (IXFX) D (TAB) A A A A A A mJ J V/ns l G D Features International standard package Low RDS (on) HDMOSTM process Rugged polysilicon gate cell structure Unclamped Inductive Switching (UIS) rated Low package inductance - easy to drive and to protect Fast intrinsic rectifier W C C C C Nm/lb.in. g l l l l l Applications l l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.5 4.5 200 TJ = 25C TJ = 125C 50N50 55N50 25 2 100 80 V V nA A mA m m l l l l VDSS VGS(th) IGSS IDSS RDS(on) VGS = 0 V, ID = 1mA VDS = VGS, ID = 8mA V GS = 20 V, VDS = 0 V DS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 DC-DC converters Battery chargers Switched-mode and resonant-mode power supplies DC choppers AC motor control Temperature and lighting controls Advantages l l l PLUS 247TM package for clip or spring mounting Space savings High power density (c) 2002 IXYS All rights reserved 98507D (04/02) IXFX 50N50 IXFX 55N50 Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 45 9400 VGS = 0 V, VDS = 25 V, f = 1 MHz 1280 460 45 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 RG = 2 (External), 60 120 45 330 VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 55 155 0.22 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W A A1 A2 b b1 b2 C D E e L L1 Q R Dim. Terminals: 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) PLUS 247TM Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 ID25 Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 55N50 50N50 55N50 50N50 Note 1 55 50 220 200 1.5 250 1.0 A A A A V ns C A Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 IF =25 A,-di/dt = 100 A/s, VR = 100 V 10 Note: 1.Pulse test, t 300 s, duty cycle d 2 % IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 IXFX 50N50 IXFX 55N50 Figure 1. Output Characteristics at 25OC TJ = 25OC VGS = 10V 9V 8V 7V 6V 140 120 100 80 Figure 2. Output Characteristics at 125OC TJ = 125OC VGS = 10V 9V 8V 7V 6V ID - Amperes ID - Amperes 100 80 60 40 20 0 60 5V 40 20 0 5V 0 4 8 12 16 20 24 0 4 8 12 16 20 24 VDS - Volts VDS - Volts 2.8 2.4 Figure 3. RDS(on) normalized to 0.5 ID25 value vs. ID VGS = 10V 2.2 2.0 1.8 Figure 4. RDS(on) normalized to 0.5 ID25 value vs. TJ VGS = 10V RDS(ON) - Normalized TJ = 125OC 2.0 1.6 TJ = 25OC RDS(ON) - Normalized ID = 55A 1.6 1.4 ID = 27.5A 1.2 0.8 0 20 40 60 80 100 120 1.2 1.0 25 50 75 100 125 150 ID - Amperes TJ - Degrees C Figure 5. Drain Current vs. Case Temperature 60 50 IXF_55N50 Figure 6. Admittance Curves 100 80 ID - Amperes IXF_50N50 ID - Amperes 40 30 20 10 0 TJ = 125oC 60 40 20 0 3.0 TJ = 25oC -50 -25 0 25 50 75 100 125 150 3.5 4.0 4.5 5.0 5.5 6.0 TC - Degrees C VGS - Volts (c) 2002 IXYS All rights reserved IXFX 50N50 IXFX 55N50 Figure 7. Gate Charge 12 10 VDS = 250V ID = 27.5A Figure 8. Capacitance Curves 10000 Ciss f = 1MHz Capacitance - pF VGS - Volts 8 6 4 2 0 0 50 100 150 200 250 300 350 Coss 1000 Crss 100 0 5 10 15 20 25 30 35 40 Gate Charge - nC VDS - Volts Figure 9. Forward Voltage Drop of the Intrinsic Diode 100 80 ID - Amperes 60 40 TJ = 125OC 20 TJ = 25OC 0 0.2 0.4 0.6 0.8 1.0 Figure10. Forward Bias Safe Operating Area 1.00 R(th)JC - K/W 0.10 0.01 0.00 10-4 10-3 10-2 10-1 100 101 Pulse Width - Seconds IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 6,306,728B1 |
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