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HT82V735
330mW Stereo Audio Power Amp With Shutdown
Features
* Operating voltage: 2.4V~6.0V * Very low standby current 0.5mA (Typ.) * High signal-to-noise ratio * High slew rate * Output power 330mW at 10% THD+N into 8W * Excellent power supply ripple rejection * Low power consumption * Wide temperature operating range * Direct drive speaker * Shutdown function * 8-pin SOP package
Applications
* CD ROM DVD player * Notebook/Desktop PC * Portable Audio Device * Headphone Amplifier * Microphone Pre-amplifier * Discman/MP3
General Description
HT82V735 is a class AB stereo earphone driver designed for portable digital audio application. Pin assignments and application circuits are compatible with LM4880 which is suitable for effective low cost applications. The HT82V735 can deliver a maximum of 330mW Output power to an 8W load with less than 10% (THD+N) from a 5V power supply. The very low standby current in shutdown mode contributes to the reduction of power consumption of battery-powered equipments. It provides 8-SOP package.
Block Diagram
OUT1 A + IN 1 B IA S B + IN 2 VDD OUT2
Pin Assignment
OUT1 1 8 2 7 3 6 4 5 IN 1 B IA S VSS VDD OUT2 IN 2 CE
H T82V735 8 S O P -A
VSS
PowerDown
CE
Pin Description
Pin No. Pin Name I/O 1 2 3 4 5 6 7 8 OUT1 IN1 BIAS VSS CE IN2 OUT2 VDD O I I Channel 1 output pin Channel 1 Audio input Supports a voltage driver for internal bias Description
3/4 Negative power supply, ground I I O Power down mode when held high, I (power down) =1mA Channel 2 Audio input Channel 2 output pin
3/4 Positive power supply
Rev. 1.10
1
February 18, 2004
HT82V735
Absolute Maximum Ratings
Supply Voltage .............................VSS-0.3V to VSS+6V Input Voltage .............................VSS-0.3V to VDD+0.3V Storage Temperature ...........................-50C to 125C Operating Temperature ..........................-20C to 70C
Note: These are stress ratings only. Stresses exceeding the range specified under Absolute Maximum Ratings may cause substantial damage to the device. Functional operation of this device at other conditions beyond those listed in the specification is not implied and prolonged exposure to extreme conditions may affect device reliability.
Electrical Characteristics
Symbol Supplies VDD IDD IPD VI(OS) IO RO Supply Voltage Supply Current Power-down Current 3/4 5V 5V No load 3/4 3/4 (THD+N)/S<0.1% 3/4 RL=8W VO Output Voltage Swing 5V RL=16W RL=32W PSRR Power Supply Rejection Ratio 5V CS=2.2mF, VRIPPLE=200VRMS, f=120Hz PO=200mW, RL=8W, CB=2.2mF PO=200mW, RL=8W, f=1kHz PO=120mW, RL=16W, f=1kHz PO=75mW, RL=32W, f=1kHz 3.3V PO=30mW, RL=32W, f=1kHz (THD+N)/S=0.1%, f=1kHz RL=8W RL=16W PO Output Power 5V RL=32W (THD+N)/S=10%, f=1kHz RL=8W RL=16W RL=32W 3/4 Parameter Test Conditions VDD Conditions
VSS=0V; fi=1kHz; RL=32W; Ta=25C Min. Typ. Max. Unit
2.4 3/4 3/4 3/4 3/4 3/4 0.66 0.38 0.18 3/4 3/4
3/4 10 1
6 3/4 3/4 3/4 3/4 3/4 3 3.15 3.29 3/4 3/4
V mA mA mV mA mW V V V dB
D.C. Characteristics Input Offset Voltage Maximum Output Current Output Resistance 5V 5V 5V 10 62 230 3/4 3/4 3/4 66
XTALK
Channel Separation
5V
85
dB
A.C. Characteristics 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 0.03 0.01 0.01 0.01 3/4 240 160 90 3/4 330 200 110 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 3/4 mW %
(THD+N)/S
Total Harmonic Distortion Plus Noise to Signal Ratio
5V
Rev. 1.10
2
February 18, 2004
HT82V735
Symbol S/N SR ATT Parameter Signal to Noise Ratio Slew Rate Power-down Attenuation Test Conditions VDD 5V 5V 5V Conditions VIN=1VRMS, RL=8W 3/4 1kHz, 0dB Min. 3/4 3/4 3/4 Typ. 92 3 70 Max. 3/4 3/4 3/4 Unit dB V/ms dB
Typical Performance Characteristics
THD+N vs. Output Power
10 5 2 1 0 .5 0 .2 0 .1 0 .0 5 0 .0 2 0 .0 1 0 .0 0 5 R
L
VDD=5V F=20Hz A V=-1
THD+N
%
=8W R
L
0 .0 0 2 0 .0 0 1 0 .0 0 0 5 0 .0 0 0 2 0 .0 0 0 1 1m 2m 5m 10m 20m
=16W R
L
=32W
50m
100m
200m
500m
1
O u tp u t P o w e r (W )
Rev. 1.10
3
February 18, 2004
HT82V735
50 20 10 5 2 1 THD+N % 0 .5 0 .2 0 .1 0 .0 5
V
DD=5V F=1kH z A V=-1
R
L L
=8W =16W
0 .0 2 0 .0 1 0 .0 0 5 0 .0 0 2 0 .0 0 1 1m 2m 5m 10m R
R
L
=32W
20m
50m
100m
200m
500m
1
O u tp u t P o w e r (W )
20 5 2 1 R
L
VDD=5V F=20kH z A V=-1
=16W
0 .5 0 .2 0 .1 THD+N % 0 .0 5 0 .0 2 0 .0 1 0 .0 0 5 R
L
=8W
R
L
=32W
0 .0 0 2 0 .0 0 1 0 .0 0 0 5 0 .0 0 0 2 0 .0 0 0 1 1m 2m 5m 10m 20m 50m 100m 200m 500m 1
O u tp u t P o w e r (W )
Rev. 1.10
4
February 18, 2004
HT82V735
Application Circuits
+5V
220pF
+
15kW
0 .1 m F
+
100mF
8
V in A 2 .2 m F 2 15kW 3 2 .2 m F 2 .2 m F V in B 6 15kW 15kW
1 5
220mF + CE 220mF +
H T82V735
7
4
220pF
Rev. 1.10
5
February 18, 2004
HT82V735
Package Information
8-pin SOP (150mil) Outline Dimensions
A 1
8
5 B 4
C
C' G D E F
H
a
Symbol A B C C D E F G H a
Dimensions in mil Min. 228 149 14 189 53 3/4 4 22 4 0 Nom. 3/4 3/4 3/4 3/4 3/4 50 3/4 3/4 3/4 3/4 Max. 244 157 20 197 69 3/4 10 28 12 10
Rev. 1.10
6
February 18, 2004
HT82V735
Product Tape and Reel Specifications
Reel Dimensions
T2 D
A
B
C
T1
SOP 8N Symbol A B C D T1 T2 Description Reel Outer Diameter Reel Inner Diameter Spindle Hole Diameter Key Slit Width Space Between Flange Reel Thickness Dimensions in mm 3301.0 621.5 13.0+0.5 -0.2 2.00.5 12.8+0.3 -0.2 18.20.2
Rev. 1.10
7
February 18, 2004
HT82V735
Carrier Tape Dimensions
D
E F
P0
P1
t
W C
B0
D1
P
K0 A0
SOP 8N Symbol W P E F D D1 P0 P1 A0 B0 K0 t C Description Carrier Tape Width Cavity Pitch Perforation Position Cavity to Perforation (Width Direction) Perforation Diameter Cavity Hole Diameter Perforation Pitch Cavity to Perforation (Length Direction) Cavity Length Cavity Width Cavity Depth Carrier Tape Thickness Cover Tape Width Dimensions in mm 12.0+0.3 -0.1 8.00.1 1.750.1 5.50.1 1.550.1 1.5+0.25 4.00.1 2.00.1 6.40.1 5.200.1 2.10.1 0.30.05 9.3
Rev. 1.10
8
February 18, 2004
HT82V735
Holtek Semiconductor Inc. (Headquarters) No.3, Creation Rd. II, Science Park, Hsinchu, Taiwan Tel: 886-3-563-1999 Fax: 886-3-563-1189 http://www.holtek.com.tw Holtek Semiconductor Inc. (Taipei Sales Office) 4F-2, No. 3-2, YuanQu St., Nankang Software Park, Taipei 115, Taiwan Tel: 886-2-2655-7070 Fax: 886-2-2655-7373 Fax: 886-2-2655-7383 (International sales hotline) Holtek Semiconductor Inc. (Shanghai Sales Office) 7th Floor, Building 2, No.889, Yi Shan Rd., Shanghai, China 200233 Tel: 021-6485-5560 Fax: 021-6485-0313 http://www.holtek.com.cn Holtek Semiconductor Inc. (Shenzhen Sales Office) 43F, SEG Plaza, Shen Nan Zhong Road, Shenzhen, China 518031 Tel: 0755-8346-5589 Fax: 0755-8346-5590 ISDN: 0755-8346-5591 Holtek Semiconductor Inc. (Beijing Sales Office) Suite 1721, Jinyu Tower, A129 West Xuan Wu Men Street, Xicheng District, Beijing, China 100031 Tel: 010-6641-0030, 6641-7751, 6641-7752 Fax: 010-6641-0125 Holmate Semiconductor, Inc. (North America Sales Office) 46712 Fremont Blvd., Fremont, CA 94538 Tel: 510-252-9880 Fax: 510-252-9885 http://www.holmate.com Copyright O 2004 by HOLTEK SEMICONDUCTOR INC. The information appearing in this Data Sheet is believed to be accurate at the time of publication. However, Holtek assumes no responsibility arising from the use of the specifications described. The applications mentioned herein are used solely for the purpose of illustration and Holtek makes no warranty or representation that such applications will be suitable without further modification, nor recommends the use of its products for application that may present a risk to human life due to malfunction or otherwise. Holteks products are not authorized for use as critical components in life support devices or systems. Holtek reserves the right to alter its products without prior notification. For the most up-to-date information, please visit our web site at http://www.holtek.com.tw.
Rev. 1.10
9
February 18, 2004

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