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| DC COMPONENTS CO., LTD. R DC9012 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 1W output amplifier of portable redios in class B push-pull operation. TO-92 .190(4.83) .170(4.33) .190(4.83) .170(4.33) 2 Typ 2 Typ .500 Min (12.70) .022(0.56) .014(0.36) .100 Typ (2.54) .148(3.76) .132(3.36) .022(0.56) .014(0.36) o o Pinning 1 = Emitter 2 = Base 3 = Collector Absolute Maximum Ratings(TA=25oC) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage Collector Current Base Current Total Power Dissipation Junction Temperature Storage Temperature Symbol VCBO VCEO VEBO IC IB PD TJ TSTG Rating -40 -20 -5 -500 -100 625 +150 -55 to +150 Unit V V V mA mA mW o o 321 .050 Typ (1.27) C .050 o o 5 Typ. 5 Typ. (1.27) Typ Dimensions in inches and (millimeters) C Electrical Characteristics o Characteristic (Ratings at 25 C ambient temperature unless otherwise specified) Symbol BVCBO BVCEO BVEBO ICBO IEBO (1) Min -40 -20 -5 64 40 100 2% Typ - Max -0.1 -0.1 -0.6 -1.2 -0.9 300 8 Unit V V V A A V V V MHz pF Test Conditions IC=-100A, IE=0 IC=-1mA, IB=0 IE=-100A, IC=0 VCB=-25V, IE=0 VEB=-3V, IC=0 IC=-500mA, IB=-50mA IC=-500mA, IB=-50mA IC=-10mA, VCE=-1V IC=-50mA, VCE=-1V IC=-500mA, VCE=-1V IC=-10mA, VCE=-1V, f=100MHz VCB=-10V, f=1MHz Collector-Base Breakdown Volatge Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Volatge Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter On Voltage DC Current Gain(1) Transition Frequency Output Capacitance (1)Pulse Test: Pulse Width (1) (1) VCE(sat) VBE(sat) VBE(on) hFE1 hFE2 fT Cob 380s, Duty Cycle Classification of hFE1 Rank Range D 64~91 E 78~112 F 96~135 G 112~166 H 144~202 I 176~300 I1 176~246 I2 214~300 |
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