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| Switching Diodes MA6X125 Silicon epitaxial planar type Unit : mm For switching circuits I Features * Four-element contained in one package, allowing high-density mounting 2.8 - 0.3 0.65 0.15 6 1.9 0.2 0.95 0.95 + 0.2 1.5 - 0.05 1 + 0.25 0.65 0.15 1.45 0.1 0.3 - 0.05 + 0.1 2.9 - 0.05 + 0.2 5 2 4 3 Peak reverse voltage Forward current (DC)* Peak forward current* VRM IF IFM Tj Tstg 40 100 200 150 -55 to +150 V mA mA C C Junction temperature Storage temperature Note) *1 : Value for single diode 1 : Cathode 1 2 : Anode 2 3 : Cathode 3 Anode 4 0 to 0.1 Reverse voltage (DC) VR 40 V 0.1 to 0.3 0.4 0.2 0.8 Parameter Symbol Rating Unit 1.1 - 0.1 4 : Anode 3 5 : Cathode 4 6 : Anode 1 Cathode 2 Mini Type Package (6-pin) Marking Symbol: M2I Internal Connection 6 5 4 1 2 3 I Electrical Characteristics Ta = 25C Parameter Reverse current (DC) Forward voltage (DC) Reverse voltage (DC) Terminal capacitance Reverse recovery time*3 Symbol IR VF VR Ct trr1*1 trr2 *2 Conditions VR = 40 V IF = 100 mA IR = 100 A VR = 0 V, f = 1 MHz IF = 10 mA, VR = 6 V Irr = 0.1 * IR, RL = 100 Min Typ Max 100 1.2 0.16 - 0.06 I Absolute Maximum Ratings Ta = 25C + 0.2 0.5 - 0.05 + 0.1 + 0.1 Unit nA V V 40 5 150 90 pF ns Note) 1. Rated input/output frequency: 100 MHz 2. *1 : Between pins 1 and 6, Between pins 3 and 5 *2 : Between pins 2 and 6, Between pins 3 and 4 *3 : trr measuring circuit Bias Application Unit N-50BU tr 10% Input Pulse tp t IF trr t Irr = 0.1 * IR IF = 10 mA VR = 6 V RL = 100 Output Pulse A VR Pulse Generator (PG-10N) Rs = 50 W.F.Analyzer (SAS-8130) Ri = 50 90% tp = 2 s tr = 0.35 ns = 0.05 1 MA6X125 IF V F 1 000 Between pins 2 and 6, 3 and 4 1 000 Between pins 1 and 6, 3 and 5 Switching Diodes IF V F 10 Ta = 100C IR V R 100 100 1 Forward current IF (mA) Forward current IF (mA) 10 Ta = 150C 100C 25C - 20C Reverse current IR (nA) 10 0.1 1 1 Ta = 150C 100C 25C 0.1 - 20C 0.01 25C 0.1 0.001 Between pins 2 and 6, 3 and 4 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0.01 0 0.2 0.4 0.6 0.8 1.0 1.2 0.000 1 0 10 20 30 40 50 60 Forward voltage VF (V) Forward voltage VF (V) Reverse voltage VR (V) IR VR 10 Ta = 100C 1 1.6 1.4 VF Ta 1.6 Between pins 2 and 6, 3 and 4 1.4 VF Ta Between pins 1 and 6, 3 and 5 Forward voltage VF (V) Reverse current IR (nA) Forward voltage VF (V) 1.2 1.0 0.8 10 mA 0.6 3 mA 0.4 0.2 IF = 100 mA 1.2 1.0 0.8 0.6 0.4 0.2 0 -40 IF = 100 mA 0.1 10 mA 3 mA 0.01 25C 0.001 Between pins 1 and 6, 3 and 5 0.000 1 0 10 20 30 40 50 60 0 -40 0 40 80 120 160 200 0 40 80 120 160 200 Reverse voltage VR (V) Ambient temperature Ta (C) Ambient temperature Ta (C) IR Ta 10 Between pins 2 and 6, 3 and 4 VR = 40 V 1 6V 1 10 IR T a Between pins 1 and 6, 3 and 5 VR = 40 V 6V 1V 0.1 Ct VR 6.0 f = 1 MHz Ta = 25C Terminal capacitance Ct (pF) 5.0 Reverse current IR (nA) Reverse current IR (nA) 1V 0.1 4.0 3.0 0.01 0.01 2.0 Between pins 1 and 6, 3 and 5 1.0 Between pins 2 and 6, 3 and 4 0.001 0.001 0.000 1 -40 0 40 80 120 160 200 0.000 1 -40 0 0 40 80 120 160 200 0 10 20 30 40 50 60 Ambient temperature Ta (C) Ambient temperature Ta (C) Reverse voltage VR (V) 2 Switching Diodes IF(surge) tW 1 000 300 tW MA6X125 Ta = 25C IF(surge) Forward surge current IF(surge) (A) 100 30 10 3 1 0.3 0.1 0.03 Non repetitive Between pins 1 and 6, 3 and 5 Between pins 2 and 6, 3 and 4 0.1 0.3 1 3 10 30 Pulse width tW (ms) 3 |
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