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TetraFET
D1002UK
METAL GATE RF SILICON FET
MECHANICAL DATA
A B C
1
2 D
4 M
3
E F
GOLD METALLISED MULTI-PURPOSE SILICON DMOS RF FET 40W - 28V - 175MHz SINGLE ENDED
FEATURES
* SIMPLIFIED AMPLIFIER DESIGN
G
H
K
I
J
* SUITABLE FOR BROAD BAND APPLICATIONS * LOW Crss * SIMPLE BIAS CIRCUITS
Tol. 0.005 0.005 5 0.005 0.005 0.005 0.005 REF 0.001 0.005 0.005 0.010
DA
PIN 1 PIN 3 SOURCE SOURCE DIM A B C D E F G H I J K M mm 24.76 18.42 45 6.35 3.17 5.71 9.52 6.60 0.13 4.32 2.54 20.32 PIN 2 PIN 4 Tol. 0.13 0.13 5 0.13 0.13 0.13 0.13 REF 0.02 0.13 0.13 0.25 DRAIN GATE Inches 0.975 0.725 45 0.25 0.125 DIA 0.225 0.375 0.260 0.005 0.170 0.100 0.800
* LOW NOISE * HIGH GAIN - 16 dB MINIMUM
APPLICATIONS
* HF/VHF/UHF COMMUNICATIONS from 1 MHz to 175 MHz
ABSOLUTE MAXIMUM RATINGS (Tcase = 25C unless otherwise stated)
PD BVDSS BVGSS ID(sat) Tstg Tj Power Dissipation Drain - Source Breakdown Voltage Gate - Source Breakdown Voltage Drain Current Storage Temperature Maximum Operating Junction Temperature 87W 70V 20V 10A -65 to 150C 200C
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D1002UK
ELECTRICAL CHARACTERISTICS (Tcase = 25C unless otherwise stated) Parameter Test Conditions Min.
BVDSS IDSS IGSS gfs GPS Ciss Coss Crss Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate Leakage Current Forward Transconductance* Common Source Power Gain Drain Efficiency Input Capacitance Output Capacitance Reverse Transfer Capacitance VGS = 0 VDS = 28V VGS = 20V ID = 10mA VDS = 10V PO = 40W VDS = 28V f = 175MHz VDS = 28V VDS = 28V VDS = 28V VGS = -5V f = 1MHz VGS = 0 VGS = 0 f = 1MHz f = 1MHz IDQ = 0.2A ID = 100mA VGS = 0 VDS = 0 VDS = VGS ID = 2A 1 1.6 16 50 20:1 70
Typ.
Max. Unit
V 2 1 7 mA A V S dB % -- 120 60 5 pF pF pF
VGS(th) Gate Threshold Voltage*
VSWR Load Mismatch Tolerance
* Pulse Test:
Pulse Duration = 300 s , Duty Cycle 2%
HAZARDOUS MATERIAL WARNING
The ceramic portion of the device between leads and metal flange is beryllium oxide. Beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. THESE DEVICES MUST NEVER BE THROWN AWAY WITH GENERAL INDUSTRIAL OR DOMESTIC WASTE.
THERMAL DATA
RTHj-case Thermal Resistance Junction - Case Max. 2.0C / W
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D1002UK
80 70 60 50
P out
80 70 60 50
Drain Efficiency P out
80 70 60 50 40
% W
f1 = 175.0MHz Idq = 0.2A VDS = 28V
17 16 15 14
Gain
40
W
40
f1 = 175.0MHz Idq = 0.2A VDS = 28V
13
dB
30 20 10 0 0 1 2 3 4
P in W
30 20 10 0
30 20 10 0 0 1 2 3 4
P in W
Pout Gain
12 11 10 5 6 7 8 9
5
6
7
8
Pout Drain Efficiency
Figure 1 - Power Output and Efficiency vs. Power Input.
-10 -15 -20
IMD3 dBc
Figure 2 - Power Output & Gain vs. Power Input.
D1002UK
OPTIMUM SOURCE AND LOAD IMPEDANCE
f1 = 175.0MHz f2 = 175.1MHz VDS = 28V
-25 -30 -35 -40 -45 -50 0 5
Frequency MHz
175MHz
ZS
3.8 + j6.5
ZL
4.6 + j0.4
10 15 20 25 30 35 40 45 50 55 60 65
P out W PEP
Idq = 0.2A Idq = 1A
Figure 3 - IMD vs. Output Power.
Typical S Parameters
! Vds=28V Idq=0.2A # MHZ S MA R 50 !Freq MHz 50 100 150 200 250 300 350 400 450 500 550 600 S11 mag 0.76 0.79 0.84 0.87 0.90 0.92 0.94 0.96 0.97 0.98 0.98 0.98 ang -144 -155 -163 -169 -176 177 170 163 156 150 144 141 S21 mag 15.6 7.1 4.2 2.7 1.9 1.5 1.1 0.9 0.7 0.6 0.4 0.4 ang 86 61 43 33 23 20 11 6 -2 -8 -12 -14 S12 mag 0.026 0.021 0.012 0.009 0.016 0.025 0.033 0.046 0.051 0.062 0.068 0.078 ang 1 -9 -3 47 76 87 85 82 78 76 74 67 S22 mag 0.58 0.66 0.74 0.81 0.85 0.88 0.91 0.94 0.96 0.98 0.98 0.98 ang -119 -132 -144 -154 -163 -172 -180 172 165 157 152 148
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Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk
D1002UK
15
+28V
Gate-Bias
10K L4 100nF 10nF 10K D1001UK 9 x 6 mm contact pad L2 16-100pF T4 16-100pF 9 x 6mm contact pad 4.7pF 10nF 1nF 10uF
L3 T3
10-30pF T1
L1 T2
10-30pF
D1002UK 175MHz TEST FIXTURE
Substrate 1.6mm PTFE/glass, Er=2.5 All microstrip lines W=4.4mm T1 T2 T3 T4 10mm 13mm 12mm 4mm L1 L2 L3 L4 1.5 turns 22swg enamelled copper wire, 6mm i.d. 10 turns 19swg enamelled copper wire, 6mm i.d. 1.5 turns 22swg enamelled copper wire, 6mm i.d. 13.5 turns 19swg enamelled copper wire on Siemens B64920A618X830 ferrite core
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612. Website: http://www.semelab.co.uk E-mail: sales@semelab.co.uk
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