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| Up to 6 GHz Medium Power Silicon Bipolar Transistor Technical Data AT-42085 Features * High Output Power: 20.5 dBm Typical P1 dB at 2.0 GHz * High Gain at 1 dB Compression: 14.0 dB Typical G1 dB at 2.0 GHz * Low Noise Figure: 2.0 dB Typical NFO at 2.0 GHz * High Gain-Bandwidth Product: 8.0 GHz Typical fT * Low Cost Plastic Package The 20 emitter finger interdigitated geometry yields a medium sized transistor with impedances that are easy to match for low noise and medium power applications. Applications include use in wireless systems as an LNA, gain stage, buffer, oscillator, and mixer. An optimum noise match near 50 up to 1 GHz, makes this device easy to use as a low noise amplifier. The AT-42085 bipolar transistor is fabricated using Hewlett-Packard's 10 GHz fT Self-Aligned-Transistor (SAT) process. The die is nitride passivated for surface protection. Excellent device uniformity, performance and reliability are produced by the use of ionimplantation, self-alignment techniques, and gold metalization in the fabrication of this device. 85 Plastic Package Description Hewlett-Packard's AT-42085 is a general purpose NPN bipolar transistor that offers excellent high frequency performance. The AT-42085 is housed in a low cost .085" diameter plastic package. The 4 micron emitter-to-emitter pitch enables this transistor to be used in many different functions. 4-169 5965-8913E AT-42085 Absolute Maximum Ratings Symbol VEBO VCBO VCEO IC PT Tj TSTG Parameter Emitter-Base Voltage Collector-Base Voltage Collector-Emitter Voltage Collector Current Power Dissipation [2,3] Junction Temperature Storage Temperature Units V V V mA mW C C Absolute Maximum[1] 1.5 20 12 80 500 150 -65 to 150 Thermal Resistance [2,4]: jc = 130C/W Notes: 1. Permanent damage may occur if any of these limits are exceeded. 2. TCASE = 25C. 3. Derate at 7.7 mW/C for TC > 85C. 4. See MEASUREMENTS section "Thermal Resistance" for more information. Electrical Specifications, TA = 25C Symbol |S21E|2 Parameters and Test Conditions Insertion Power Gain; VCE = 8 V, IC = 35 mA f = 1.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f= 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz f = 2.0 GHz f = 4.0 GHz Units dB Min. 15.5 Typ. Max. 17.0 11.0 5.0 20.5 20.0 14.0 9.5 2.0 3.5 13.5 9.5 8.0 30 150 270 0.2 2.0 P1 dB G1 dB NFO GA fT hFE ICBO IEBO CCB Power Output @ 1 dB Gain Compression VCE = 8 V, IC = 35 mA 1 dB Compressed Gain; VCE = 8 V, IC = 35 mA Optimum Noise Figure: VCE = 8 V, IC = 10 mA Gain @ NFO; VCE = 8 V, IC = 10 mA Gain Bandwidth Product: VCE = 8 V, IC = 35 mA Forward Current Transfer Ratio; VCE = 8 V, IC = 35 mA Collector Cutoff Current; VCB = 8 V Emitter Cutoff Current; VEB = 1 V Collector Base Capacitance[1]: VCB = 8 V, f = 1 MHz dBm dB dB dB GHz -- A A pF 0.32 Note: 1. For this test, the emitter is grounded. 4-170 AT-42085 Typical Performance, TA = 25C 20 P1 dB (dBm) 1.0 GHz 24 P1 dB (dBm) 2.0 GHz 24 10 V 20 16 12 P1dB 16 |S21E|2 GAIN (dB) 2.0 GHz 20 4.0 GHz P1dB 2.0 GHz 6V 4V 12 16 8 G1 dB (dB) 4.0 GHz 12 G1 dB (dB) G1dB 16 14 G1dB 10 V 6V 4V 4 8 4.0 GHz 12 10 0 10 20 30 IC (mA) 40 0 0 10 20 30 IC (mA) 40 50 4 0 10 20 30 IC (mA) 40 50 50 Figure 1. Insertion Power Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 2. Output Power and 1 dB Compressed Gain vs. Collector Current and Frequency. VCE = 8 V. Figure 3. Output Power and 1 dB Compressed Gain vs. Collector Current and Voltage. f = 2.0 GHz. 40 35 30 GAIN (dB) 25 20 15 10 5 0 0.1 0.3 0.5 1.0 3.0 6.0 FREQUENCY (GHz) MAG |S21E|2 MSG 24 21 18 GAIN (dB) 15 12 9 6 3 0 0.5 1.0 2.0 NFO GA 4 3 2 1 0 3.0 4.0 5.0 NFO (dB) FREQUENCY (GHz) Figure 4. Insertion Power Gain, Maximum Available Gain and Maximum Stable Gain vs. Frequency. VCE = 8 V, IC = 35 mA. Figure 5. Noise Figure and Associated Gain vs. Frequency. VCE = 8 V, IC = 10mA. 4-171 AT-42085 Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 10 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .72 -50 28.5 26.52 152 0.5 .66 -139 21.0 11.23 103 1.0 .65 -168 15.5 5.96 84 1.5 .65 175 12.2 4.06 71 2.0 .65 163 9.7 3.06 60 2.5 .66 157 8.0 2.51 55 3.0 .68 149 6.3 2.07 46 3.5 .68 141 5.1 1.79 38 4.0 .69 133 3.9 1.57 29 4.5 .69 125 3.0 1.41 21 5.0 .69 114 2.2 1.28 12 5.5 .71 103 1.4 1.17 3 6.0 .75 91 0.6 1.07 -6 dB -37.0 -29.2 -28.6 -27.0 -25.3 -24.0 -22.8 -21.4 -19.7 -18.5 -17.1 -15.9 -15.1 S12 Mag. .014 .035 .037 .045 .054 .063 .072 .085 .104 .119 .139 .161 .177 S22 Ang. 73 36 39 46 51 60 65 64 64 63 58 55 49 Mag. .90 .53 .45 .43 .42 .42 .41 .43 .45 .46 .47 .44 .40 Ang. -16 -32 -33 -36 -41 -42 -48 -55 -61 -66 -71 -76 -85 AT-42085 Typical Scattering Parameters, Common Emitter, ZO = 50 , TA = 25C, VCE = 8 V, IC = 35 mA Freq. S11 S21 GHz Mag. Ang. dB Mag. Ang. 0.1 .54 -90 33.1 45.38 137 0.5 .61 -163 22.6 13.45 95 1.0 .61 178 16.8 6.90 79 1.5 .62 167 13.4 4.67 68 2.0 .63 156 10.9 3.52 59 2.5 .64 152 9.2 2.89 54 3.0 .66 146 7.6 2.39 45 3.5 .67 139 6.3 2.07 37 4.0 .68 131 5.2 1.81 28 4.5 .68 123 4.2 1.62 19 5.0 .68 114 3.4 1.48 10 5.5 .71 103 2.5 1.34 1 6.0 .74 93 1.7 1.21 -8 A model for this device is available in the DEVICE MODELS section. dB -40.1 -32.8 -29.5 -26.4 -23.9 -22.5 -21.2 -19.8 -18.6 -17.2 -16.4 -15.3 -14.5 S12 Mag. .010 .023 .034 .048 .064 .075 .088 .102 .117 .138 .152 .171 .188 S22 Ang. 66 52 61 68 66 68 69 67 65 60 56 50 46 Mag. .76 .38 .34 .32 .31 .31 .30 .31 .33 .35 .35 .34 .31 Ang. -26 -30 -28 -31 -36 -40 -48 -58 -67 -73 -79 -85 -96 AT-42085 Noise Parameters: VCE = 8 V, IC = 10 mA Freq. GHz 0.1 0.5 1.0 2.0 4.0 NFO dB 1.1 1.2 1.3 2.0 3.5 opt Mag .05 .06 .10 .24 .46 Ang 16 77 131 -179 -128 RN/50 0.13 0.13 0.12 0.11 0.25 4-172 85 Plastic Package Dimensions .020 .51 EMITTER 4 0.143 0.015 3.63 0.38 1 BASE 420 45 3 COLLECTOR Notes: (unless otherwise specified) 1. Dimensions are in mm 2. Tolerances in .xxx = 0.005 mm .xx = 0.13 EMITTER .085 2.15 2 .060 .010 1.52 .25 5 TYP. .006 .002 .15 .05 .07 0.43 .286 .030 7.36 .76 4-173 |
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