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| Composite Transistors XN01212 (XN1212) Silicon NPN epitaxial planar type Unit: mm For switching/digital circuits Features * Two elements incorporated into one package (Emitter-coupled transistors with built-in resistor) * Reduction of the mounting area and assembly cost by one half 3 2.90+0.20 -0.05 1.90.1 (0.95) (0.95) 4 5 0.16+0.10 -0.06 1.50+0.25 -0.05 2.8+0.2 -0.3 2 0.30+0.10 -0.05 10 1 Basic Part Number * UNR2212 (UN2212) x 2 1.1+0.2 -0.1 (0.65) Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg Rating 50 50 100 300 150 -55 to +150 Unit V V mA mW C C 1: Collector (Tr1) 2: Collector (Tr2) 3: Base (Tr2) EIAJ: SC-74A 0 to 0.1 Absolute Maximum Ratings Ta = 25C 4: Emitter 5: Base (Tr1) Mini5-G1 Package Marking Symbol: 9K Internal Connection 3 4 5 Tr2 1.1+0.3 -0.1 Tr1 1 Electrical Characteristics Ta = 25C 3C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio hFE Ratio * Collector-emitter saturation voltage Output voltage high-level Output voltage low-level Input resistance Resistance ratio Transition frequency Symbol VCBO VCEO ICBO ICEO IEBO hFE hFE(Small /Large) 2 Conditions IC = 10 A, IE = 0 IC = 2 mA, IB = 0 VCB = 50 V, IE = 0 VCE = 50 V, IB = 0 VEB = 6 V, IC = 0 VCE = 10 V, IC = 5 mA VCE = 10 V, IC = 5 mA IC = 10 mA, IB = 0.3 mA VCC = 5 V, VB = 0.5 V, RL = 1 k VCC = 5 V, VB = 2.5 V, RL = 1 k Min 50 50 Typ Max Unit V V A A mA 0.1 0.5 0.2 60 0.50 0.99 0.25 4.9 0.2 -30% 0.8 22 1.0 150 +30% 1.2 VCE(sat) VOH VOL R1 R1 / R 2 fT V V V k MHz VCB = 10 V, IE = -2 mA, f = 200 MHz Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. *: Ratio between 2 elements Note) The part number in the parenthesis shows conventional part number. Publication date: February 2004 SJJ00018BED 0.40.2 5 1 XN01212 PT Ta 500 160 Ta = 25C IC VCE Collector-emitter saturation voltage VCE(sat) (V) 100 VCE(sat) IC IC / IB = 10 Total power dissipation PT (mW) Collector current IC (mA) 400 120 IB = 1.0 mA 0.9 mA 0.8 mA 0.7 mA 0.6 mA 0.5 mA 0.4 mA 10 300 80 0.3 mA 1 Ta = 75C 200 25C 0.1 -25C 40 0.2 mA 100 0.1 mA 0 0 0 40 80 120 160 0 2 4 6 8 10 12 0.01 0.1 1 10 100 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector current IC (mA) hFE IC Collector output capacitance C (pF) (Common base, input open circuited) ob 400 VCE = 10 V 6 Cob VCB f = 1 MHz IE = 0 Ta = 25C IO VIN 104 VO = 5 V Ta = 25C Forward current transfer ratio hFE 5 Ta = 75C 4 Output current IO (A) 300 103 200 25C -25C 3 102 2 100 10 1 0 1 10 100 1 000 0 0.1 1 10 100 1 0.4 0.6 0.8 1.0 1.2 1.4 Collector current IC (mA) Collector-base voltage VCB (V) Input voltage VIN (V) VIN IO 100 VO = 0.2 V Ta = 25C Input voltage VIN (V) 10 1 0.1 0.01 0.1 1 10 100 Output current IO (mA) 2 SJJ00018BED |
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