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PD54003 - PD54003S
RF POWER TRANSISTORS The LdmoST Plastic FAMILY
PRELIMINARY DATA
N-CHANNEL ENHANCEMENT-MODE LATERAL MOSFETs * EXCELLENT THERMAL STABILITY * COMMON SOURCE CONFIGURATION * POUT = 3 W with 12 dB gain @ 500 MHz / 7.5V * NEW RF PLASTIC PACKAGE
DESCRIPTION The PD5400 is a common source N-Channel, enhancement-mode, lateral Field-Effect RF power transistor. It is designed for high gain, broad band commercial and industrial applications. It operates at 7V in common source mode at frequencies of up to 1GHz. PD54003 boasts the excellent gain, linearity and reliability of ST's latest LDMOS technology mounted in the first true SMD plastic RF power package, PowerSO-10RF. PD54003's superior linearity performance makes it an ideal solution for portable radio. The PowerSO-10 plastic package, designed to offer high reliability, is the first ST JEDEC approved, high power SMD package. It has been specially optimized for RF needs and offers excellent RF performances and ease of assembly.
PowerSO-10RF (Formed Lead) ORDER CODE BRANDING XPD54003 PD54003
PowerSO-10RF (Straight Lead) ORDER CODE BRANDING PD54003S XPD54003S
ABSOLUTE MAXIMUM RATINGS(TCASE = 25 OC)
Symbol V(BR)DSS V GS ID PDISS Tj TSTG Parameter Drain Source Voltage Gate-Source Voltage Drain Current Power Dissipation (@ Tc = 70 C) Max. Operating Junction Temperature Storage Temperature
0
Value 25 20 4 52.8 165 -65 to 165
Unit V V A W
0C 0C
THERMAL DATA
R th(j-c) May 2000 Junction-Case Thermal Resistance 1.8
0
C/W 1/10
PD54003 - PD54003S
ELECTRICAL SPECIFICATION(TCASE = 25 0C) STATIC
Symbol IDSS IGSS V GS(Q) VDS(ON) gFS C ISS COSS C RSS VGS = 0 V VGS = 20 V VDS = 10 V VGS = 10 V VDS = 10 V VGS = 0 V VGS = 0 V VGS = 0 V Parameter V DS = 25 V VDS = 0 V ID = 50 mA ID = 1 A ID = 1 A VDS = 7.5 V VDS = 7.5 V VDS = 7.5 V f = 1 MHz f = 1 MHz f = 1 MHz 1.5 59 43 4.0 2.0 Min. Typ. Max. 1 1 5.0 1.3 Unit A A V V mho pF pF pF
DYNAMIC
Symbol POUT GPS D LOAD Mismatch f = 500 MHz f = 500 MHz f = 500 MHz Parameter VDD = 7.5 V VDD = 7.5 V VDD = 7.5 V IDQ = 50 mA POUT = 3 W POUT = 3 W POUT = 3 W IDQ = 50 mA IDQ = 50 mA IDQ = 50 mA 20:1 Min. 3 12 55 Typ. Max. Unit W dB % VSWR
f = 500 MHz VDD = 9.5 V ALL PHASE ANGLES
PIN CONNECTION
SOURCE
D
ZDL
GATE
DRAIN G Zin
Typical Input Impedance
Typical Drain Load Impedance
SC15200
SC13140
S
PD54003
Frequency MHz 520 500 480 Zin
IMPEDANCE DATA PD54003S
Zdl
Frequency MHz 520 500 480
Zin
Zdl
1.993 - j1.098 1.553 - j1.251 2.245 - j0.077
2.564 + j0.656 2.661 + j0.139 3.436 + j1.013
1.534 - j2.104 1.209 - j2.451 1.400 - j3.986
2.524 + j2.369 3.192 + j3.147 2.805 + j2.724
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PD54003 - PD54003S TYPICAL PERFORMANCE
Capacitance vs. Drain Voltage
1000
f = 1MHz
Drain Current vs. Gate Voltage
8 7
Id, DRAIN CURRENT(A)
Vds=10V
C, CAPACITANCE (pF)
6 5 4 3 2 1
100
Ciss
Coss
10
Crss
1 0 5 10 15
VDD, DRAIN VOLTAGE (V)
0 1 2 3 4 5 6 7 8 9
VGS, GATE-SOURCE VOLTAGE (V)
Gate-Source Voltage vs. Case Temperature
VGS, GATE-SOURCE VOLTAGE (NORMALIZED)
1.06 1.04 1.02 1
ID =1.5A
0.98 0.96
Vds=10V
ID= 2A ID=1 A
0.94 0.92 -25
ID=0.5A ID= 0.25A
0
25
50
75
100
Tc, CASE TEMPERATURE (C)
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PD54003 - PD54003S TYPICAL PERFORMANCE
Output Power vs. Input Power
PD54003
Power Gain vs. Output Power
16
480MHz
5
Pout, OUTPUT POWER (W)
4
480MHz
14
Pg, POWER GAIN (dB)
500MHz 520MHz
3
500MHz
12
520MHz
2
Vdd=7.5V Idq=50 mA
10
Vdd=7.5V Idq=50mA
1
8
0 0 0.1 0.2
Pin, INPUT POWER (W)
6 0.3 0.4 0 1 2 3 4
Pout, OUTPUT POWER (W)
Drain Efficiency vs. Output Power
80 70
Nd, DRAIN EFFICIENCY (%)
520MHz 480MHz
Return Loss vs. Output Power
0
Rtl, RETURN LOSS(dB)
60 50 40 30 20 10 0 1 2 3 4
Pout, OUTPUT POWER (W)
Vdd=7.5V Idq=50mA 500MHz
-10
480M Hz
-20
-30
Vdd=7.5 V Idq=50mA
520MHz
500MHz
-40 0 1 2 3 4
Pout, OUTPUT POWER (W)
Output Power vs. Bias Current
Drain Efficiency vs. Bias Current
70
3.8 3.7
Pout, OUTPUT POWER (W)
500MHz
480MHz
60
Nd, DRAIN EFFICIENCY (%)
500MHz 520MHz
3.6 3.5 3.4 3.3 3.2 3.1 3 2.9 0 100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
Pin=23.3dBm Vdd=7.5V 480MHz
50 40 30 20 10
0 100 200 300 400 500
520MHz
Pin=23.3 dBm Vdd=7.5V
600
700
800
IDQ, BIAS CURRENT (mA)
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PD54003 - PD54003S TYPICAL PERFORMANCE
Output Power vs. Supply Voltage
5.5 5
Pout, OUTPUT POWER (W)
480MHz
Drain Efficiency vs. Supply Voltage
70
480M Hz
4.5 4 3.5
520MHz 500M Hz
Nd, DRAIN EFFICIENCY (%)
60
500MHz
50 40
520M Hz
3 2.5 2 1.5 5 6 7 8 9 10
VDD, SUPPLY VOLTAGE (V)
Pin=23.3dBm Idq=50mA
30
Pin=23.3dBm Idq=50mA
20 5 6 7 8 9 10
VDD, SUPPLY VOLTAGE (V)
Output Power vs. Gate-Source Voltage
5
Output Power vs. Input Power
5
480MHz 500MHz
PD54003S
Pout, OUTPUT POWER (W)
Pout, OUTPUT POWER (W)
4
480MHz
4
520MHz
3
500MHz 520MHz
3
2
2
1
Pin=23.3dBm Vdd=7.5V
1
Vdd=7.5V Idq=50mA
0 0 1 2 3 4
VGS, GATE-SOURCE VOLTAGE (V)
0 0 0.1 0.2 0.3 0.4 0.5
Pin, INPUT POWER (W)
Power Gain vs. Output Power
16
480MHz
Drain Efficiency vs. Output Power
70
520M Hz
14
Pg, POWER GAIN (dB) Nd, EFFICIENCY (%)
60 50
500MHz
12
480MHz
500MHz 520MHz
40 30 20 10
10
8
Vdd=7.5V Idq=50mA
Vdd=7.5 V Idq=50mA
6 0 1 2 3 4
Pout, OUTPUT POWER (W)
0
1
2
3
4
Pout, OUTPUT POWER (W)
5/10
PD54003 - PD54003S TYPICAL PERFORMANCE
Return Loss vs. Output Power
0
Output Power vs. Bias Current
3.5 3.4
520MHz
Rtl, RETURN LOSS (dB)
-10
500MHz 520MHz
Pout, OUTPUT POWER (W)
3.3 3.2 3.1 3
480M Hz 500M Hz
-20
2.9 2.8 2.7 2.6
Pin=22dBm Vdd=7.5V
-30
480MHz
Vdd=7.5V Idq=50 mA
-40 0 1 2 3 4
Pout, OUTPUT POWER (W)
0
100
200
300
400
500
600
700
800
IDQ, BIAS CURRENT(mA)
Drain Efficency vs. Bias Current
60
500MHz
Output Power vs. Supply Voltage
6
Nd, DRAIN EFFICIENCY(%)
480M Hz
Pout, OUTPUT POWER (W)
50
520MHz
5
520M Hz
480MHz
40
4
500MHz
30
3
20
Pin=22dBm Vdd=7.5V
2
Pin=22dBm Idq=50mA
10 0 100 200 300 400 500 600 700 800
IDQ, BIAS CURRENT (mA)
1 5 6 7 8 9 10
VDD, SUPPLY VOLTAGE (V)
Drain Efficency vs. Supply Voltage
70
Output Power vs. Gate-Source Voltage
4
Nd, DRAIN EFFICIENCY (%)
Pout, OUTPUT POWER (W)
480MHz
480MHz
60
500MHz
3
500MHz 520 MHz
50
520M Hz
2
40
Pin=22dBm Idq=50mA
1
Pin= 22dBm Vdd= 7.5V
30 5 6 7 8 9 10
VDD, SUPPLY VOLTAGE (V)
0 0 1 2 3 4
VGS, GATE-SOURCE VOLTAGE (V)
6/10
PD54003 - PD54003S
TEST CIRCUIT SCHEMATIC
TEST CIRCUIT COMPONENT PART LIST
B1,B2 C1,C13 C2,C3,C4,C10, C11,C12 C5 C6,C17 C7,C14 C8,C15 C9,C16 L1 N1,N2 R1 R2 SHORT FERRITE BEAD, FAIR RITE PRODUCTS (2743021446) 240pF, 100 mil CHIP CAPACITOR 0 TO 20pF TRIMMER CAPACITOR 130pF, 100 mil CHIP CAP 120pF, 100 mil CHIP CAP 10F, 50V ELECTROLYTIC CAPACITOR 1,200pF, 100 mil CHIP CAPACITOR 0.1 F, 100 mil CHIP CAPACITOR 55.5 Nh, 5 TURN, COILCRAFT TYPE N FLANGE MOUNT 15 , 0805 CHIP RESISTOR 1,0 K, 1/8 W RESISTOR R3 R4 Z1 Z2 Z3 Z4 Z5 Z6,Z7 Z8 Z9 Z10 Z11 15 , 0805 CHIP RESISTOR 33 K, 1/8 W RESISTOR 0.175" X 0.080" MICROSTRIP 1.049" X 0.080" MICROSTRIP 0.289" X 0.080" MICROSTRIP 0.026" X 0.080" MICROSTRIP 0.192" X 0.223" MICROSTRIP 0.260" X 0.223" MICROSTRIP 0.064" X 0.080" MICROSTRIP 0.334" X 0.080" MICROSTRIP 0.985" X 0.080" MICROSTRIP 0.472" X 0.080" MICROSTRIP ROGER, ULTRA LAM 2000 BOARD THK 0.030", r = 2.55 2oz. ED Cu 2 SIDES.
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PD54003 - PD54003S
TEST CIRCUIT
TEST CIRCUIT PHOTOMASTER
6.4 inches
8/10
4 inches
PD54003 - PD54003S
PowerSO-10RF (Straight Lead) MECHANICAL DATA
PowerSO-10RF (Formed Lead) MECHANICAL DATA
9/10
PD54003 - PD54003S
Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. N o license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is registered trademark of STMicroelectronics (R) 2000 STMicroelectronics - All Rights Reserved All other names are the property of their respective owners. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - China - Finland - France - Germany - Hong Kong - India - Italy - Japan - Malaysia - Malta - Morocco Singapore - Spain - Sweden - Switzerland - United Kingdom - U.S.A. http://www.st.com
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