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| '9 9 n ew ! MICROWAVE CORPORATION HMC132G7 HMC132P7 GaAS MMIC HIGH-ISOLATION SPDT SWITCH DC - 6 GHZ FEBRUARY 2001 Features BANDWIDTH: DC-6 GHz HIGH ISOLATION : > 40 dB NON-REFLECTIVE DESIGN General Description The HMC132G7 and HMC132P7 are the packaged versions of the HMC132 MMIC SPDT switch. Both use the same 7-pin ceramic package but with modified lead configurations. The G7 suffix designates package leads configured for surface mount while the P7 suffix designates package leads configured for microstrip insertion. The device is a fast, broadband SPDT switch featuring high (> 40 dB) isolation over the entire band. The switch is non-reflective at both RF1 and RF2 ports. 7 SWITCHES Guaranteed Performance, With 0/-5V control, 50 Ohm System, -55 to +85 deg C Parameter Inser tion Loss Isolation Return Loss Frequency DC - 3 GHz DC - 6 GHz DC - 3 GHz DC - 6 GHz DC - 3 GHz DC - 6 GHz 0.5 - 6 GHz 0.5 - 6 GHz 0.5 - 6 GHz DC - 6 GHz 3 6 ns ns 45 35 14 5 +20 +22 +38 Min. Typ. 1.5 2.2 50 40 18 8 +25 +27 +42 Max. 1.9 2.6 Units dB dB dB dB dB dB dB m dB m dB m SMT SPDT Input Power for 0.1dB Compression Input Power for 1dB Compression Input Third Order Intercept Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 12 '9 9 MICROWAVE CORPORATION HMC132G7 HMC132P7 ne w ! HMC132G7 / HMC132P7 HIGH-ISOLATION SPDT SWITCH DC - 6 GHZ FEBRUARY 2001 Insertion Loss 0 -1 Isolation 0 -10 INSERTION LOSS (dB) ISOLATION (dB) -20 -30 -40 -50 -60 -70 -2 -3 -4 -5 0 1 2 3 4 5 6 7 0 1 2 3 4 5 FREQUENCY (GHz) 6 7 FREQUENCY (GHz) 7 Return Loss 0 RETURN LOSS (dB) -10 -20 0 1 2 3 4 5 6 7 FREQUENCY (GHz) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 13 SMT -30 SPDT SWITCHES '9 9 n ew ! MICROWAVE CORPORATION HMC132G7 HMC132P7 HMC132G7 / HMC132P7 HIGH-ISOLATION SPDT SWITCH DC - 6 GHZ FEBRUARY 2001 Schematic RF COM Truth Table Control Input A B Low H i gh Signal Path State RF to RF1 ON OFF RF to RF2 OFF ON RF1 RF2 H i gh Low Do not "HOT" switch power levels > +15 dBm ( Vctl = 0/-5Vdc) AB (BACKSIDE IS GND) Control Voltages State Low H i gh Bias Condition 0 to -0.2V @ 20uA Max. -5V@200uA Typ to -7V@600uA Max Absolute Maximum Ratings Control Voltage Range Storage Temperature Operating Temperature +0.5 to -7.5 Vdc -65 to +150 deg C -55 to +125 deg C 7 SWITCHES Outline: HMC132G7 Outline: HMC132P7 0.260 0.025 0.130 0.005 +/- 0.001 7 PLCS 7 PLCS 0.320 +/- 0.012 0.260 0.130 0.005 +/- 0.001 7 PLCS 0.050 +/- 0.020 7 PLCS RFCOM RFCOM 0.276 +/- 0.012 SPDT 0.215 RF1 0.010 +/- 0.002 7 PLCS RF2 0.085 CASE BOTTOM IS GROUND 0.210 +/- 0.020 0.215 0.010 +/- 0.002 7 PLCS RF1 RF2 0.085 CASE BOTTOM IS GROUND GND A 0.062 B GND A GND 0.000/0.010 0.045 TYP 0.135 TYP 0.062 B GND 0.045 TYP 0.135 TYP TYP 7 PL 0.065 MAX SMT 0.065 MAX 1) 2. 3. 4. MATERIAL: A) PACKAGE - BODY : WHITE ALUMINA (92%) B) LEADS - PACKAGE COVER: KOVAR (tm) C) CONDUCTOR TRACES - THICKFILM TUNGSTEN PLATING (LEADS): ELECTROLYTIC GOLD 50 MICROINCHES MINIMUM OVER ELECTROLYTIC NICKEL 50 MICROINCHES MINIMUM. ALL UNLABELED PINS ARE GROUND. ALL DIMENSIONS ARE IN INCHES 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 14 '9 9 MICROWAVE CORPORATION HMC132G7 HMC132P7 FEBRUARY 2001 ne w ! HMC132G7 / HMC132P7 HIGH-ISOLATION SPDT SWITCH DC - 6 GHZ Suggested Driver Circuit for HMC132G7/P7 Vz=5.1V Izt=50uA COMPENSATED DEVICES CD4689 TTL OR CMOS VCC GND VCC GND A GaAs SWITCH CONTROL B 10K 74HCT04 (TTL) 74HC04 (CMOS) -5 VDC 7 Simple driver using inexpensive standard logic ICs provides fast switching using minimum DC current. 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 7 - 15 SMT SPDT SWITCHES |
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