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| DATA SHEET COMPOUND TRANSISTOR FB1 SERIES on-chip resistor NPN silicon epitaxial transistor For mid-speed switching FEATURES * Up to 0.7 A current drive available * On-chip bias resistor * Low power consumption during drive PACKAGE DRAWING (UNIT: mm) QUALITY GRADES * Standard Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. FB1 SERIES LISTS Products FB1A4A FB1L2Q FB1A3M FB1F3P FB1J3P FB1L3N FB1A4M Marking P30 P31 P32 P33 P36 P34 P35 R1 (K) - 0.47 1.0 2.2 3.3 4.7 10 R2 (K) 10 4.7 1.0 10 10 10 10 ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (Pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) * IB(DC) PT Tj Tstg Ratings 30 25 10 0.7 1.0 20 200 150 -55 to +150 Unit V V V A A mA mW C C * PW10 ms, duty cycle50 % The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16180EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan (c) 2002 1998 FB1 SERIES FB1A4A ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VCE(sat) ** VIL ** R1 R2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A IC = 0.5 A, IB = 5 mA VCE = 5.0 V, IC = 100 A - 7 - 10 300 300 135 0.27 0.4 0.3 - 13 MIN. TYP. MAX. 100 Unit nA - - - V V k ** PW 350 s, duty cycle 2 % FB1L2Q ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.5 A VCE = 5.0 V, IC = 100 A 329 3.29 150 300 135 400 700 600 0.2 0.62 470 4.7 0.3 0.3 611 6.11 MIN. TYP. MAX. 100 Unit nA - - - V V k ** PW 350 s, duty cycle 2 % FB1A3M ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.5 A VCE = 5.0 V, IC = 100 A 0.7 0.7 1.0 1.0 80 100 135 0.3 0.4 0.3 1.3 1.3 MIN. TYP. MAX. 100 Unit nA - - - V V k k ** PW 350 s, duty cycle 2 % 2 Data Sheet D16180EJ1V0DS FB1 SERIES FB1F3P ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.3 A VCE = 5.0 V, IC = 100 A 1.54 7 2.2 10 300 300 135 0.3 0.3 2.86 13 MIN. TYP. MAX. 100 Unit nA - - - V V k k ** PW 350 s, duty cycle 2 % FB1J3P ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.2 A VCE = 5.0 V, IC = 100 A 2.31 7 300 300 135 600 700 600 0.14 0.6 3.3 10 0.3 0.3 4.29 13 MIN. TYP. MAX. 100 Unit nA - - - V V k k ** PW 350 s, duty cycle 2 % FB1L3N ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Low level output voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VOL ** VIL ** R1 R2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.2 A VCE = 5.0 V, IC = 100 A 3.29 7 4.7 10 300 300 135 0.3 0.3 6.11 13 MIN. TYP. MAX. 100 Unit nA - - - V V k k ** PW 350 s, duty cycle 2 % Data Sheet D16180EJ1V0DS 3 FB1 SERIES FB1A4M ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector cutoff current DC current gain DC current gain DC current gain Collector saturation voltage Low level input voltage Input resistance E-to-B resistance Symbol ICBO hFE1 ** hFE2 ** hFE3 ** VCE(sat) ** VIL ** R1 R2 Conditions VCB = 30 V, IE = 0 VCE = 2.0 V, IC = 0.1 A VCE = 2.0 V, IC = 0.5 A VCE = 2.0 V, IC = 0.7 A VIN = 5.0 V, IC = 0.2 A VCE = 5.0 V, IC = 100 A 7 7 10 10 300 300 135 0.3 0.3 13 13 MIN. TYP. MAX. 100 Unit nA - - - V V k k ** PW 350 s, duty cycle 2 % 4 Data Sheet D16180EJ1V0DS FB1 SERIES TYPICAL CHARACTERISTICS (Ta = 25C) Data Sheet D16180EJ1V0DS 5 FB1 SERIES RECOMMENDED SOLDERING CONDITIONS This product should be soldered and mounted under the following recommended conditions. For soldering methods and conditions other than those recommended below, contact an NEC sales representative. Surface MOUNTING TYPE For details of the recommended soldering conditions, refer to the document Semiconductor Device Mounting Technology Manual (C10535E). Recommended Condition Symbol IR30-00 VP15-00 O Soldering Method Infrared reflow VPS Partial heating Soldering Conditions Package peak temperature: 230C, Time: 30 sec. max. (at 210C or higher), Count: Once, Exposure limit: None * Package peak temperature: 215C, Time: 40 sec. max. (at 200C or higher), Count: Once, Exposure limit: None * Pin temperature: 300C max., Time: 10 sec. max. Exposure limit: None * * After opening the dry pack, store it at 25C or less and 65% RH or less for the allowable storage period. Cautions 1. Do not use different soldering methods together (except for partial heating). 2. Prevent the resin surface temperature from being higher than the board temperature by 20C or more. 6 Data Sheet D16180EJ1V0DS FB1 SERIES [MEMO] Data Sheet D16180EJ1V0DS 7 |
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