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| Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery FEATURES * Low forward volt drop * Fast switching * Soft recovery characteristic * High thermal cycling performance * Low thermal resistance BY329 series SYMBOL QUICK REFERENCE DATA VR = 800 V/ 1000 V/ 1200 V IF(AV) = 8 A IFSM 75 A trr 135 ns k 1 a 2 GENERAL DESCRIPTION Glass-passivated double diffused rectifier diodes featuring low forward voltage drop, fast reverse recovery and soft recovery characteristic. The devices are intended for use in TV receivers, monitors and switched mode power supplies. The BY329 series is supplied in the conventional leaded SOD59 (TO220AC) package. PINNING PIN 1 2 tab DESCRIPTION cathode anode cathode SOD59 (TO220AC) tab 1 2 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134). SYMBOL VRSM VRRM VRWM IF(AV) PARAMETER Peak non-repetitive reverse voltage Peak repetitive reverse voltage Crest working reverse voltage Average forward current1 square wave; = 0.5; Tmb 122 C sinusoidal; a = 1.57; Tmb 125 C CONDITIONS BY329 MIN. -800 800 800 600 MAX. -1000 -1200 1000 1200 1000 800 8 7 11 16 75 82 1200 1000 UNIT V V V A A A A A A IF(RMS) IFRM IFSM I2t Tstg Tj RMS forward current Repetitive peak forward current t = 25 s; = 0.5; Tmb 122 C Non-repetitive peak forward t = 10 ms current. t = 8.3 ms sinusoidal; Tj = 150 C prior to surge; with reapplied VRWM(max) I2t for fusing t = 10 ms Storage temperature Operating junction temperature -40 - 28 150 150 A2s C C 1 Neglecting switching and reverse current losses. September 1998 1 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery THERMAL RESISTANCES SYMBOL Rth j-mb Rth j-a PARAMETER Thermal resistance junction to mounting base Thermal resistance junction to ambient CONDITIONS MIN. in free air. - BY329 series TYP. 60 MAX. 2.0 - UNIT K/W K/W STATIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL VF IR PARAMETER Forward voltage Reverse current CONDITIONS IF = 20 A VR = VRWM; Tj = 125 C MIN. TYP. 1.5 0.1 MAX. 1.85 1.0 UNIT V mA DYNAMIC CHARACTERISTICS Tj = 25 C unless otherwise stated SYMBOL trr Qs dIR/dt PARAMETER Reverse recovery time Reverse recovery charge Maximum slope of the reverse recovery current CONDITIONS IF = 1 A; VR > 30 V; -dIF/dt = 50 A/s IF = 2 A; VR > 30 V; -dIF/dt = 20 A/s IF = 2 A; -dIF/dt = 20 A/s MIN. TYP. 100 0.5 50 MAX. 135 0.7 60 UNIT ns C A/s September 1998 2 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery BY329 series I dI F dt F 100 90 80 IFS (RMS) / A BY329 trr time 70 60 50 40 IFSM Qs 25% 100% 30 20 10 I R I rrm 0 1ms 10ms 0.1s tp / s 1s 10s Fig.1. Definition of trr, Qs and Irrm Fig.4. Maximum non-repetitive rms forward current. IF = f(tp); sinusoidal current waveform; Tj = 150C prior to surge with reapplied VRWM. IF / A Tj = 150 C Tj = 25 C BY229F 20 PF / W Vo = 1.25 V Rs = 0.03 Ohms BY329 Tmb(max) / C 110 D = 1.0 120 30 15 0.5 0.2 0.1 I tp 20 10 130 tp T t 5 T D= 10 140 typ max 0 0 2 4 6 IF(AV) / A 8 10 150 12 0 0 0.5 1 VF / V 1.5 2 Fig.2. Maximum forward dissipation, PF = f(IF(AV)); square wave current waveform; parameter D = duty cycle = tp/T. BY329 Tmb(max) / C a = 1.57 1.9 10 4 5 140 2.2 2.8 130 Fig.5. Typical and maximum forward characteristic; IF = f(VF); parameter Tj 15 PF / W Vo = 1.25 V Rs = 0.03 Ohms 120 10 Qs / uC Tj = 150 C Tj = 25 C BY329 IF = 10 A 10 A 2A 1 1A 2A 1A 0 0 2 4 IF(AV) / A 6 150 8 0.1 1 10 -dIF/dt (A/us) 100 Fig.3. Maximum forward dissipation, PF = f(IF(AV)); sinusoidal current waveform; parameter a = form factor = IF(RMS)/IF(AV). Fig.6. Maximum Qs at Tj = 25C and 150C September 1998 3 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery BY329 series 1000 trr / ns BY329 IF = 10 A 10A 1A 1A 10 Transient thermal impedance, Zth j-mb (K/W) 1 100 0.1 0.01 P D tp D= Tj = 150 C Tj = 25 C 10 1 10 -dIF/dt (A/us) 100 0.001 1us T tp T t 10us 100us 1ms 10ms 100ms 1s pulse width, tp (s) BY229 10s Fig.7. Maximum trr measured to 25% of Irrm; Tj = 25C and 150C Fig.9. Transient thermal impedance Zth = f(tp) 100 Cd / pF BY329 10 1 1 10 VR / V 100 1000 Fig.8. Typical junction capacitance Cd at f = 1 MHz; Tj = 25C September 1998 4 Rev 1.200 Philips Semiconductors Product specification Rectifier diodes fast, soft-recovery MECHANICAL DATA Dimensions in mm Net Mass: 2 g BY329 series 4,5 max 10,3 max 1,3 3,7 2,8 5,9 min 3,0 max not tinned 3,0 15,8 max 13,5 min 1,3 max 1 (2x) 2 0,9 max (2x) 0,6 2,4 5,08 Fig.10. SOD59 (TO220AC). pin 1 connected to mounting base. Notes 1. Refer to mounting instructions for TO220 envelopes. 2. Epoxy meets UL94 V0 at 1/8". September 1998 5 Rev 1.200 |
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