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Power Transistors
2SB1574 (Tentative)
Silicon PNP epitaxial planar type
Unit: mm
For low-frequency output amplification
7.30.1 1.80.1
6.50.1 5.30.1 4.350.1
2.30.1 0.50.1
0.8max
q q q q
Possible to solder radiation fin directly to printed cicuit boad Type with universal characteristics Collector breakdown voltage: VCBO/VCEO = -50V Collector current: IC = -2A
2.50.1
0.930.1
1.00.1 0.10.05 0.50.1
0.750.1 2.30.1 4.60.1
1
2
3
s Absolute Maximum Ratings
Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Peak collector current Collector current Collector power dissipation (TC=25C) Junction temperature Storage temperature Symbol VCBO VCEO VEBO ICP IC PC Tj Tstg
1:Base 2:Collector 3:Emitter U Type Package Unit: mm
(TC=25C)
Ratings -50 -50 -5 -3 -2 10 150 -55 to +150 Unit V V V A A W C C
1
6.50.2 5.35 4.35
1.8
0.75 2.3 2.3
0.6 0.50.1
2.30.1
2
3
1:Base 2:Collector 3:Emitter EIAJ:SC-63 U Type Package (Z)
s Electrical Characteristics
Parameter Collector cutoff current Collector to base voltage Collector to emitter voltage Emitter to base voltage Forward current transfer ratio Collector to emitter saturation voltage Base to emitter saturation voltage Transition frequency Collector output capacitance
(TC=25C)
Symbol ICBO VCBO VCEO VEBO hFE1* hFE2 VCE(sat) VBE(sat) fT Cob Conditions VCB = -10V, IE = 0 IC = -10A, IE = 0 IC = -1mA, IB = 0 IE = -10A, IC = 0 VCE = -2V, IC = -200mA VCE = -2V, IC = -1A IC = -1A, IB = -50mA IC = -1A, IB = -50mA VCB = -10V, IE = 50mA, f = 200MHz VCB = -10V, IE = 0, f = 1MHz -50 -50 -5 120 60 - 0.2 - 0.85 80 45 60 - 0.3 -1.2 V V MHz pF 340 min typ max - 0.1 Unit A V V V
*h
FE1
Rank classification
R 120 to 240 S 170 to 340
Rank hFE1
6.0
5.50.2 13.30.3
1.00.2
s Features
1

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