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| y2 k n ew ! MICROWAVE CORPORATION HMC259 General Description The HMC259 chip is a broadband sub-harmonically pumped (x2) balanced MMIC passive mixer which can be used as an upconverter or downconverter. The chip utilizes a GaAs MESFET process resulting in a small overall chip area of 1.9mm2. This chip has a very wide IF bandwidth of DC-13 GHz. The 2LO to RF isolation is excellent eliminating the need for additional filtering . This mixer chip is designed to be used in 38GHz point to point radios, Local Multi-Point Distribution Systems (LMDS), and SATCOM applications. All data is with the chip in a 50 ohm test fixture connected via 0.025 mm (1 mil) diameter wire bonds of minimal length <0.31 mm (<12 mils). This device is a much smaller and more reliable replacement to hybrid diode mixer designs. GaAs MMIC SUB-HARMONICALLY PUMPED MIXER 28 - 40 GHz FEBRUARY 2001 Features SUB-HARMONICALLY PUMPED (x2) LO HIGH 2LO/RF ISOLATION: > 35dB SMALL SIZE: 1.24mm x 1.55mm IDEAL FOR 38 GHz RADIOS, E1 & T1 4 MIXERS DIE Guaranteed Performance*, Parameter Min. Frequency Range, RF Frequency Range LO Frequency Range, IF Conversion Loss Noise Figure (SSB) 2 LO to RF Isolation 2 LO to IF Isolation RF to IF Isolation LO to IF Isolation IP3 (Input) 1 dB Compression (Input) Local Oscillator Drive Level * Configured as a downconverter 12 Elizabeth Drive, Chelmsford, MA 01824 LO Drive=+15dBm, - 55 to + 85 deg C IF = 1 GHz IF = 1 GHz Units Max. GHz GHz GHz 15 15 dB dB dB dB dB dB dBm dBm +18 dBm Typ. 28 - 40 14 - 20 DC - 12 14 14 Max. Min. Typ. 36 - 40 18 - 20 DC - 4 17 17 40 63 25 12 2 -7 +18 +13 12 12 50 68 32 17 6 -1 +15 28 58 25 10 2 -7 +13 35 65 30 15 5 -4 +15 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 4 - 112 y2 k HMC259 MICROWAVE CORPORATION ne HMC259 SUB-HARMONICALLY PUMPED MIXER 28 - 40 GHz FEBRUARY 2001 w ! Conversion Gain vs. Temperature @ LO = +15 dBm 0 CONVERSION GAIN (dB) -5 Isolation @ LO = +15 dBm 0 RF/LO ISOLATION (dB) -55 C -10 +25 C -20 RF/IF LO/IF -40 2LO/IF -60 2LO/RF -15 -20 +85 C -25 24 26 28 30 32 34 36 38 40 RF FREQUENCY (GHz) -80 24 26 28 30 32 34 36 38 40 RF FREQUENCY (GHz) 4 MIXERS Conversion Gain vs. LO Drive 0 -5 -10 -15 -20 +16 dBm -25 -30 24 26 28 30 32 34 36 38 40 RF FREQUENCY (GHz) +13 dBm +14 dBm CONVERSION GAIN (dB) Return Loss @ LO = +15 dBm 0 -5 RETURN LOSS (dB) +15 dBm -10 -15 -20 -25 -30 -35 -40 0 5 10 15 IF LO & RF 20 25 30 35 40 FREQUENCY (GHz) IF Bandwidth @ LO =+15dBm 0 IF CONVERSION GAIN (dB) -5 -10 -15 -20 -25 -30 0 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 IF FREQUENCY (GHz) Upconverter Performance Conversion Gain @ LO = +15dBm 0 -5 -10 -15 -20 -25 -30 24 26 28 30 32 34 36 38 40 RF FREQUENCY (GHz) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 CONVERSION GAIN (dB) Fax: 978-250-3373 Web Site: www.hittite.com 4 - 113 DIE y2 k n ew ! HMC259 MICROWAVE CORPORATION HMC259 SUB-HARMONICALLY PUMPED MIXER 28 - 40 GHz FEBRUARY 2001 Input IP3 vs. LO Drive 20 THIRD ORDER INTERCEPT (dBm) +16 dBm Input IP3 vs. Temperature @ LO = 0 dBm 20 THIRD ORDER INTERCEPT (dBm) 16 +85 C 12 16 12 +15 dBm +25 C 8 8 4 +14 dBm 0 24 26 28 30 32 34 36 38 40 RF FREQUENCY (GHz) 4 -55 C 0 24 26 28 30 32 34 36 38 40 RF FREQUENCY (GHz) 4 MIXERS Input IP2 vs. LO Drive SECOND ORDER INTERCEPT (dBm) 60 Input IP2 vs. Temperature @ LO = 0 dBm SECOND ORDER INTERCEPT (dBm) 60 50 40 30 20 10 0 -55 C 50 40 +16 dBm +14 dBm +25 C 30 20 10 0 24 26 28 30 32 34 36 38 40 RF FREQUENCY (GHz) +15 dBm DIE +85 C 24 26 28 30 32 34 36 38 40 RF FREQUENCY (GHz) MXN Spurious Outputs @ LO Drive = 0 dBm mRF P1dB vs. Temperature @ LO =+15 dBm 5 4 5 -37 -46 4 nLO 3 2 1 0 P1dB (dBm) 3 2 1 0 -1 -2 -3 -4 -5 24 26 28 -55 C +85 C -3 -2 -1 0 1 2 3 +25 C -48 -22 -28 X -81 +29 -24 -29 -40 -76 -44 RF = 30 GHz @ -15 dBm LO = 14 GHz @ +15 dBm All values in dBc below IF power level 30 32 34 36 38 40 RF FREQUENCY (GHz) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 4 - 114 y2 k HMC259 MICROWAVE CORPORATION ne HMC259 SUB-HARMONICALLY PUMPED MIXER 28 - 40 GHz FEBRUARY 2001 w ! Schematic RF IF Absolute Maximum Ratings RF / IF Input LO Drive Storage Temperature Operating Temperature +13 dBm +23 dBm -65 to +150 deg C -55 to +85 deg C LO 4 ( See Die Handling, Mounting, Bonding Note Page 4-116) Outline Drawing RF BACKSIDE IS GROUND 1.35 (0.053) IF ALL DIMENSION IN MILLIMETERS (INCHES) ALL TOLERANCES ARE 0.025 (0.001) DIE THICKNESS IS 0.100 (0.004) BACKSIDE IS GROUND BOND PADS ARE 0.100 (0.004) SQUARE 0.76 (0.030) Hittite BOND PAD SPACING, CTR-CTR: 0.150 (0.006) BACKSIDE METALLIZATION : GOLD BOND PAD METALLIZATION : GOLD LO 0.15 (0.006) 0.10 (0.004) 0.10 (0.004) 1.04 (0.041) 1.24 (0.049) 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 4 - 115 DIE 1.55 (0.061) MIXERS y2 k n ew ! HMC259 MICROWAVE CORPORATION HMC259 SUB-HARMONICALLY PUMPED MIXER 28 - 40 GHz FEBRUARY 2001 MIC Assembly Techniques for HMC259 4 MIXERS DIE Mounting & Bonding Techniques for Millimeterwave GaAs MMICs RF The die should be attached directly to the ground plane eutectically or with conductive epoxy (see HMC general Handling, Mounting, Bonding Note). 50 Ohm Microstrip transmission lines on 0.127mm (5 mil) thick alumina thin film substrates are recommended for bringing RF to and from the chip (Figure 1). If 0.254mm (10 mil) thick alumina thin film substrates must be used, the die should be raised 0.150mm (6 mils) so that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102mm (4 mil) thick die to a 0.150mm (6 mil) thick molybdenum heat spreader (moly-tab) which is then attached to the ground plane (Figure 2). LO IF Figure 3: Typical HMC259 Assembly Microstrip substrates should brought as close to the die as possible in order to minimize bond wire length. Typical die-to-substrate spacing is 0.076mm (3 mils). 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 4 - 116 y2 k HMC259 MICROWAVE CORPORATION ne w ! HMC259 SUB-HARMONICALLY PUMPED MIXER 28 - 40 GHz FEBRUARY 2001 Handling Precautions Follow these precautions to avoid permanent damage. Cleanliness: Handle the chips in a clean environment. DO NOT attempt to clean the chip using liquid cleaning systems. Static Sensitivity: Follow ESD precautions to protect against > 250V ESD strikes ( see page 8 - 2 ). Transients: Suppress instrument and bias supply transients while bias is applied. Use shielded signal and bias cables to minimize inductive pick-up. General Handling: Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip has fragile air bridges and should not be touched with vacuum collet, tweezers, or fingers. 4 Mounting The chip is back-metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. The mounting surface should be clean and flat. Eutectic Die Attach: A 80/20 gold tin preform is recommended with a work surface temperature of 255 deg. C and a tool temperature of 265 deg. C. When hot 90/10 nitrogen/hydrogen gas is applied, tool tip temperature should be 290 deg. C. DO NOT expose the chip to a temperature greater than 320 deg. C for more than 20 seconds. No more than 3 seconds of scrubbing should be required for attachment. Epoxy Die Attach: Apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the manufacturer's schedule. Wire Bonding Ball or wedge bond with 0.025 mm (1 mil) diameter pure gold wire. Thermosonic wirebonding with a nominal stage temperature of 150 deg. C and a ball bonding force of 40 to 50 grams or wedge bonding force of 18 to 22 grams is recommended. Use the minimum level of ultrasonic energy to achieve reliable wirebonds. Wirebonds should be started on the chip and terminated on the package or substrate. All bonds should be as short as possible <0.31 mm (12 mils). 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Web Site: www.hittite.com 4 - 117 DIE MIXERS |
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