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| DATA SHEET SILICON POWER TRANSISTOR 2SB1432 PNP SILICON EPITAXIAL TRANSISTOR (DARLINGTON CONNECTION) FOR LOW-FREQUENCY POWER AMPLIFIERS AND LOW-SPEED SWITCHING The 2SB1432 is a Darlington power transistor that can be directly driven from the output of an IC. This transistor is ideal for OA and FA equipment such as motor and solenoid drivers. In addition, a small resin-molded insulation type package contributes to high-density mounting and reduction of mounting cost. ORDERING INFORMATION Part No. 2SB1432 Package Isolated TO-220 (Isolated TO-220) FEATURES * High hFE due to Darlington connection hFE 1,000 @VCE = -2.0 V, IC = -10 A) * Mold package that does not require an insulation board or insulation bushing ABSOLUTE MAXIMUM RATINGS (TA = 25C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse) IB(DC) PT Tj Tstg TC = 25C TA = 25C PW 300 s, duty cycle 10% Conditions Ratings -100 -100 -8.0 - +10 - +20 -1.0 30 2.0 150 -55 to +150 Unit V V V A A A W W C C INTERNAL EQUIVALENT CIRCUIT 1. Base 2. Collector 3. Emitter The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D14859EJ2V0DS00 (2nd edition) Date Published April 2002 N CP(K) Printed in Japan (c) 2002 1998 2SB1432 ELECTRICAL CHARACTERISTICS (TA = 25C) Parameter Collector cutoff current DC current gain Collector saturation voltage Base saturation voltage Gain bandwidth product Collector capacitance Turn-on time Storage time Fall time Symbol ICBO hFE VCE(sat) VBE(sat) fT Cob ton tstg tf Conditions VCB = -100 V, IE = 0 A VCE = -2.0 V, IC = -10 ANote IC = -10 A, IB = -25 mANote IC = -10 A, IB = -25 mANote VCE = -5.0 V, IC = -1.0 A VCB = -10 V, IE = 0 A, f = 1.0 MHz IC = -10 A, RL = 5.0 , IB1 = -IB2 = -25 mA, VCC -50 V Refer to the test circuit. 1,000 6,000 -1.1 -1.8 80 200 1.0 5.0 2.0 MIN. TYP. MAX. -10 30,000 -1.5 -2.2 Unit A V V MHz pF s s s Note Pulse test PW 350 s, duty cycle 2% SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT Base current waveform Collector current waveform 2 Data Sheet D14859EJ2V0DS 2SB1432 TYPICAL CHARACTERISTICS (TA = 25C) Total Power Dissipation PT (W) Case Temperature TC (C) Derating dT (%) Case Temperature TC (C) Collector current IC (A) Single pulse Collector current IC (A) Collector to Emitter Voltage VCE (V) Collector to Emitter Voltage VCE (V) Transient Thermal Resistance rth(t) (C/W) Without heatsink With infinite heatsink Pulse Width PW (s) Data Sheet D14859EJ2V0DS 3 2SB1432 Pulse test Base Saturation Voltage VBE(sat) (V) Collector Saturation Voltage VCE(sat) (V) Pulse test DC Current Gain hFE Collector Current IC (A) Collector Current IC (A) 4 Data Sheet D14859EJ2V0DS 2SB1432 PACKAGE DRAWING (UNIT: mm) Electrode Connection 1. Base 2. Collector 3. Emitter Data Sheet D14859EJ2V0DS 5 |
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