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| DATA SHEET SILICON POWER TRANSISTORS 2SA1615, 1615-Z PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH-SPEED SWITCHING The 2SA1615 and 1615-Z are available for the large current control in small dimension due to the low saturation and are ideal for high-efficiency DC/DC converters due to the fast switching speed. FEATURES * Large current capacity: IC(DC): -10 A, IC(pulse): -15 A * High hFE and low collector saturation voltage: hFE = 200 MIN. (@VCE = -2.0 V, IC = -0.5 A) VCE(sat) -0.25 V (@IC = -4.0 A, IB = -0.05 A) QUALITY GRADES * Standard Please refer to "Quality Grades on NEC Semiconductor Devices" (Document No. C11531E) published by NEC Corporation to know the specification of quality grade on the devices and its recommended applications. ABSOLUTE MAXIMUM RATINGS (Ta = 25C) Parameter Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current (DC) Collector current (pulse) Base current (DC) Total power dissipation Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC(DC) IC(pulse)* IB(DC) PT (Ta = 25C)** PT (Tc = 25C) Tj Tstg Ratings -30 -20 -10 -10 -15 -0.5 1.0 15 150 -55 to +150 Unit V V V A A A W W C C * PW 10 ms, duty cycle 50% ** Printing board mounted The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all devices/types available in every country. Please check with local NEC representative for availability and additional information. Document No. D16119EJ1V0DS00 (1st edition) Date Published April 2002 N CP(K) Printed in Japan (c) 2002 2SA1615, 1615-Z ELECTRICAL CHARACTERISTICS (Ta = 25C) Parameter Collector cutoff current Emitter cutoff current DC current gain DC current gain Collector saturation voltage Base saturation voltage Gain bandwidth product Output capacity Turn-on time Storage time Fall time Symbol ICBO IEBO hFE1* hFE2* VCE(sat)* VBE(sat)* fT Cob ton tstg tf Conditions VCB = -20 V, IE = 0 VEB = -8.0 V, IC = 0 VCE = -2.0 V, IC = -0.5 A VCE = -2.0 V, IC = -4.0 A IC = -4.0 A, IB = -0.05 A IC = -4.0 A, IB = -0.05 A VCE = -5.0 V, IE = 1.5 A VCB = -10 V, IE = 0, f = 1.0 MHz IC = -5.0 A, IB1 = -IB2 = 0.125 A, RL = 2.0 , VCC -10 V 200 160 -0.2 -0.9 180 220 80 300 60 -0.25 -1.2 V V MHz pF ns ns ns MIN. TYP. MAX. -1.0 -1.0 600 Unit A A * Pulse test PW 350 s, duty cycle 2% hFE CLASSIFICATION Marking hFE2 L 200 to 400 K 300 to 600 PACKAGE DRAWING (UNIT: mm) 2SA1615 2SA1615-Z Electrode Connection 1. Base 2. Collector 3. Emitter 4. Collector (fin) 2 Data Sheet D16119EJ1V0DS 2SA1615, 1615-Z TYPICAL CHARACTERISTICS (Ta = 25 C) Total Power Dissipation PT (W) IC Derating dT (%) Case Temperature TC (C) Case Temperature TC (C) Collector Current IC (A) Single pulse Collector to Emitter Voltage VCE (V) Collector Current IC (A) Collector to Emitter Voltage VCE (V) -15 Collector Current IC (A) -10 -5 Base to Emitter Voltage VBE (V) DC Current Gain hFE Collector Current IC (A) Data Sheet D16119EJ1V0DS 3 2SA1615, 1615-Z Collector Saturation Voltage VCE(sat) (V) Collector Current IC (A) Base Saturation Voltage VBE(sat) (V) Collector Current IC (A) SWITCHING TIME (ton, tstg, tf) TEST CIRCUIT %DVH FXUUHQW ZDYHIRUP &ROOHFWRU FXUUHQW ZDYHIRUP 4 Data Sheet D16119EJ1V0DS 2SA1615, 1615-Z [MEMO] Data Sheet D16119EJ1V0DS 5 |
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