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| SEMICONDUCTOR TECHNICAL DATA HIGH SPEED RECTIFICATION (SWITCHING REGULATORS, CONVERTERS, CHOPPERS) UNIVERSAL-USE RECTIFIERS. KDR732E SCHOTTKY BARRIER TYPE DIODE (TWIN TYPE, CATHODE COMMON) E B FEATURES A G H 2 1 3 D DIM A B C D E G H J Low Forward Voltage : VF max=0.55V Fast reverse recovery time (trr max=10nS) Low switching noise. Low leakage current and high reliablility due to Ultrasmall-sized package permtting KDR732 applied sets to be made small and slim. Highly reliable planar structure. MILLIMETERS _ 1.60 + 0.10 _ 0.85 + 0.10 _ 0.70 + 0.10 0.27+0.10/-0.05 _ 1.60 + 0.10 _ 1.00 + 0.10 0.50 _ 0.13 + 0.05 J C 3 1. ANODE 1 2. ANODE 2 3. CATHODE 2 1 MAXIMUM RATING (Ta=25 CHARACTERISTIC Repetitive (Peak) Reverse Voltage Non-Repetitive (Peak) Reverse Surge Voltage Average Forward Current Surge Forward Current Junction Temperature Storage Temperature Range ) SYMBOL VRRM VRSM IO IFSM Tj Tstg RATING 30 35 70 2 125 -55 125 UNIT V V mA A ESM Marking UZ ELECTRICAL CHARACTERISTICS (Ta=25 CHARACTERISTIC Reverse Voltage Forward Voltage Reverse Current Total Capacitance Reverse Recovery Time VR VF IR CT trr ) TEST CONDITION IR=20 A IF=70mA VR=15V VR=10V, f=1MHz IR=IF=10mA MIN. 30 TYP. 3.0 MAX. 0.55 5 10 UNIT V V A pF nS SYMBOL 2003. 2. 25 Revision No : 1 1/2 KDR732E I F - VF FORWARD CURRENT I F (mA) 100 50 30 Ta= 125 C Ta= 25 C I R - VR REVERSE CURRENT I R (A) 1K 100 10 1 0.1 0.01 Ta=125 C Ta=100 C Ta=75 C Ta=50 C Ta=25 C 200 10 5 3 1 0.5 0 0.2 0.4 0.6 0.8 1.0 0 5 10 15 20 25 30 35 FORWARD VOLTAGE VF (V) REVERSE VOLTAGE VR (V) INTERTERMINAL CAPACITANCE C (pF) SURGE FORWARD CURRENT I S(peak) (A) C - VR 20 f=1MHz IS - t 2.8 2.4 1s Current waveform 20ms t 50Hz sine wave 10 5 3 2.0 1.6 1.2 0.8 0.4 0 0.01 0.03 0.1 1 0.5 1 3 5 10 30 50 0.3 1 3 REVERSE VOLTAGE VR (V) TIME t (S) t rr TEST CIRCUIT Duty < 10% = 10mA 1mA 100 50 10mA 10s 10 5V t rr 2003. 2. 25 Revision No : 1 2/2 |
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