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| WTE POWER SEMICONDUCTORS DF005 - DF10 1.0A GLASS PASSIVATED BRIDGE RECTIFIER Features ! ! ! ! ! ! Glass Passivated Die Construction Low Forward Voltage Drop + High Current Capability High Surge Current Capability Designed for Surface Mount Application A B Plastic Material - UL Recognition Flammability Classification 94V-O ~ ~ C E D Mechanical Data ! ! ! ! ! ! Case: Molded Plastic Terminals: Plated Leads Solderable per G H MIL-STD-202, Method 208 Polarity: As Marked on Case I Weight: 0.38 grams (approx.) *Low profile models (E = 2.20~2.50mm) are available. Mounting Position: Any Please consult factory. Marking: Type Number DIL Dim Min Max A 7.40 7.90 B 6.20 6.50 C 8.13 8.51 D 7.60 8.90 E* 3.20 3.40 G 0.41 0.51 H 3.90 4.20 I 5.0 5.20 All Dimensions in mm Maximum Ratings and Electrical Characteristics Single Phase, half wave, 60Hz, resistive or inductive load. For capacitive load, derate current by 20%. Characteristic Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage RMS Reverse Voltage Average Rectified Output Current @TA = 40C Symbol VRRM VRWM VR VR(RMS) IO DF005 50 35 @TA=25C unless otherwise specified DF01 100 70 DF02 200 140 DF04 400 280 1.0 DF06 600 420 DF08 800 560 DF10 1000 700 Unit V V A Non-Repetitive Peak Forward Surge Current 8.3ms Single half sine-wave superimposed on rated load (JEDEC Method) Forward Voltage per element Peak Reverse Current At Rated DC Blocking Voltage @IF = 1.0A @TA = 25C @TA = 125C IFSM VFM IRM Cj RJA Tj, TSTG 30 1.1 10 500 25 40 -55 to +150 A V A pF K/W C Typical Junction Capacitance per element (Note 1) Typical Thermal Resistance (Note 2) Operating and Storage Temperature Range Note: 1. Measured at 1.0 MHz and applied reverse voltage of 4.0V D.C. 2. Thermal resistance junction to ambient mounted on PC board with 13mm2 copper pad. DF005 - DF10 1 of 3 (c) 2002 Won-Top Electronics IF, INSTANTANEOUS FORWARD CURRENT (A) 1.0 60 Hz Resistive or Inductive load 10 Tj = 25C Pulse Width = 300s 2% duty cycle I(AV), AVERAGE FORWARD CURRENT (A) 1.0 0.5 0.1 0 40 60 80 100 120 140 0.01 0.4 0.6 0.8 1.0 1.2 1.4 TA, AMBIENT TEMPERATURE (C) Fig. 1 Output Current Derating Curve VF, INSTANTANEOUS FORWARD VOLTAGE (V) Fig. 2 Typ Forward Characteristics (per element) IFSM , PEAK FORWARD SURGE CURRENT (A) 60 Single half-sine-Wave (JEDEC M ethod) 100 Tj = 25c f = 1.0 Mhz Vsig = 50 mV p-p 50 CJ, CAPACITANCE (pF) 40 30 10 20 10 0 1 10 100 1 1 10 100 NUM BER OF CYCLES AT 60 Hz Fig. 3 M ax Non-Repetitive Peak Forward Surge Current VR, REVERSE VOLTAGE (V) Fig. 4 Typ Junction Capacitance (per element) 100 IR, INSTANTANEOUS REVERSE CURRENT (A) Tj = 125C 10 1.0 Tj = 25C 0.1 0.01 0 20 40 60 80 100 120 140 PERCENT OF RATED PEAK REVERSE VOLTAGE (%) Fig. 5 Typ Reverse Characteristics (per element) DF005 - DF10 2 of 3 (c) 2002 Won-Top Electronics |
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