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| BGA 312 Silicon Bipolar MMIC-Amplifier Preliminary data * Cascadable 50 -gain block * 11 dB typical gain at 1.0 GHz * 9 dBm typical P -1dB at 1.0 GHz * 3 dB-bandwidth: DC to 2.0 GHz 1 RF OUT/Bias 3 4 2 1 VPS05178 RF IN 3 Circuit Diagram 2, 4 EHA07312 GND Type Marking Ordering Code Q62702-G0042 Pin Configuration 1 RFout/bias 2 GND 3 RFinput Package 4 GND SOT-143 BGA 312 BMs Maximum Ratings Parameter Device current Symbol Value 60 250 10 150 -65 ...+150 -65 ...+150 Unit mA mW dBm C ID Ptot PRFin Tj TA T stg 1) Total power dissipation, T S 99 C RF input power Junction temperature Ambient temperature Storage temperature Thermal Resistance Junction - soldering point RthJS 205 K/W 1) TS is measured on the collector lead at the soldering point to the pcb Semiconductor Group Semiconductor Group 11 Sep-04-1998 1998-11-01 BGA 312 Electrical Characteristics at TA = 25 C, unless otherwise specified. Symbol Values Parameter min. AC characteristics (VD = 4.7 V, Zo = 50 ) Insertion power gain |S21| 2 |S 21|2 12 11 10 +-0.6 typ. max. Unit dB f = 0.1 GHz f = 1 GHz f = 1.8 GHz Insertion point gain flatness f = 0.1 GHz to 0.6 GHz Noise figure NF 5.5 6 7 9 20 14 dBm dB f = 0.1 GHz f = 1 GHz f = 2 GHz 1dB compression point P-1dB RL in RL out f = 1 GHz Return loss input f = 0.1 GHz to 2 GHz Return loss output f = 0.1 GHz to 3 GHz Typical biasing configuration min. VCC = 7 V R Bias D RFC (optional) 4 3 2 EHA07313 Semiconductor Group Semiconductor Group 22 C Block IN 1 C Block VD OUT RBias = VCC - VD / ID VD = 4.7V Sep-04-1998 1998-11-01 BGA 312 S-Parameters at T A = 25 C f GHz S11 MAG ANG MAG S21 ANG MAG S12 ANG MAG S22 ANG VD = 4.7 V, Z o = 50 0.01 0.009 17.9 0.1 0.012 43.5 0.3 0.027 55.8 0.5 0.039 52.5 0.8 0.049 33.7 1 0.046 22.2 1.8 0.054 -135.4 2.4 0.147 179.9 3 0.24 152.1 3.94 3.95 3.93 3.89 3.79 3.69 3.13 2.63 2.19 179.2 174.4 163.4 152.2 135.8 124.9 84.1 57.6 35.7 0.131 0.131 0.133 0.136 0.142 0.149 0.181 0.205 0.225 0.2 1.7 4.8 7.8 11.7 13.8 16.6 14.7 11.6 0.208 0.207 0.204 0.201 0.194 0.191 0.183 0.182 0.184 -0.5 -6.2 -19.1 -31.9 -51.3 -64.2 -106.8 -124.9 -134.9 Insertion power gain |S21|2 = f ( f ) Noise figure NF = f ( f ) VD = 4.7 V, ID = 42 mA 10 VD = 4.7 V, ID = 42 mA 25 dB dB |S21|2 15 NF 0 1 6 10 4 5 2 0 -1 10 10 GHz 10 0 -1 10 10 0 GHz 10 1 f f Semiconductor Group Semiconductor Group 33 Sep-04-1998 1998-11-01 |
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