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| 2SK2691-01R FAP-IIIB Series > Features High Current Low On-Resistance No Secondary Breakdown Low Driving Power Avalanche Rated N-channel MOS-FET 60V 0,01 70A 100W > Outline Drawing > Applications - Motor Control - General Purpose Power Amplifier - DC-DC converters > Maximum Ratings and Characteristics - Absolute Maximum Ratings (TC=25C), unless otherwise specified Item Drain-Source-Voltage Continous Drain Current Pulsed Drain Current Gate-Source-Voltage Maximum Avalanche Energy Max. Power Dissipation Operating and Storage Temperature Range Symbol V DS ID I D(puls) V GS E AV PD T ch T stg Rating 60 70 280 20 685 100 150 -55 ~ +150 * L=0,186mH, VCC=24V > Equivalent Circuit Unit V A A V mJ* W C C - Electrical Characteristics (TC=25C), unless otherwise specified Item Drain-Source Breakdown-Voltage Gate Threshhold Voltage Zero Gate Voltage Drain Current Gate Source Leakage Current Drain Source On-State Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On-Time ton (ton=td(on)+tr) Turn-Off-Time toff (ton=td(off)+tf) Avalanche Capability Diode Forward On-Voltage Reverse Recovery Time Reverse Recovery Charge Symbol V (BR)DSS V GS(th) I DSS I R g C C C t t t t I V t Q GSS DS(on) fs iss oss rss d(on) r d(off) f AV SD rr rr Test conditions ID=1mA VGS=0V ID=1mA VDS=VGS VDS=60V Tch=25C VGS=0V Tch=125C VGS=20V VDS=0V ID=40A VGS=4V VGS=10V ID=40A VDS=25V VDS=25V VGS=0V f=1MHz VCC=30V ID=75A VGS=10V RGS=10 Tch=25C L = 100H IF=160A VGS=0V Tch=25C IF=80A VGS=0V -dIF/dt=100A/s Tch=25C Min. 60 1,0 Typ. 1,5 10 0,2 10 0,012 0,0075 55 3500 1250 360 15 75 190 110 1,15 75 0,17 Max. 2,0 500 1,0 100 0,017 0,01 5250 1870 540 23 120 285 165 1,65 120 25 70 Unit V V A mA nA S pF pF pF ns ns ns ns A V ns C - Thermal Characteristics Item Thermal Resistance Symbol R th(ch-a) R th(ch-c) Test conditions channel to air channel to case Min. Typ. Max. 30 1,25 Unit C/W C/W Collmer Semiconductor - P.O. Box 702708 - Dallas TX - 75370 - 972.233.1589 - 972.233.0481 Fax - www.collmer.com - 11/98 N-channel MOS-FET 60V 0,01 2SK2691-01R FAP-IIIB Series Drain-Source On-State Resistance vs. Tch RDS(on) = f(Tch); ID=40A; VGS=10V 70A 100W > Characteristics Typical Output Characteristics ID=f(VDS); 80s pulse test; TC=25C Typical Transfer Characteristics ID=f(VGS); 80s pulse test; VDS=25V; Tch=25C ID [A] RDS(ON) [m] 2 ID [A] 1 3 VDS [V] Tch [C] VGS [V] Typical Drain-Source On-State-Resistance vs. ID RDS(on)=f(ID); 80s pulse test; TC=25C Typical Forward Transconductance vs. ID gfs=f(ID); 80s pulse test; VDS=25V; Tch=25C Gate Threshold Voltage vs. Tch VGS(th)=f(Tch); ID=1mA; VDS=VGS RDS(ON) [m] gfs [S] 5 VGS(th) [V] 4 6 ID [A] ID [A] Tch [C] Typical Capacitances vs. VDS C=f(VDS); VGS=0V; f=1MHz Typical Gate Charge Characteristic VGS=f(Qg); ID=80A; TC=25C Forward Characteristics of Reverse Diode IF=f(VSD); 80s pulse test; Tch=25C C [F] VDS [V] VGS [V] IF [A] 7 8 9 VDS [V] Qg [nC] VSD [V] Maximum Avalanche Energy vs. starting Tch EAV=f(starting Tch): VCC=24V; IAV 70A Safe Operation Area ID=f(VDS): D=0,01, Tc=25C Zth(ch-c) [K/W] Transient Thermal impedance Zthch=f(t) parameter:D=t/T EAV [mJ] 10 ID [A] 12 starting Tch [C] VDS [V] t [s] This specification is subject to change without notice! N-channel MOS-FET 60V 0,01 2SK2691-01R FAP-IIIB Series Power Dissipation PD=f(TC) 70A 100W > Characteristics 125 100 PD / PDmax [%] 75 50 25 0 0 25 50 75 TC [C] 100 125 150 Maximum Avalanche Current vs. starting Tch IAV=f(starting Tch) 110 100 90 80 70 IAV / IAVmax [%] 60 50 40 30 20 10 0 0 25 50 75 starting Tch [C] 100 125 150 This specification is subject to change without notice! |
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