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| TPC8004 TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (-MOSVI) TPC8004 Lithium Ion Battery Applications Portable Equipment Applications Notebook PC Applications Small footprint due to small and thin package Low drain-source ON resistance : RDS (ON) = 37 m (typ.) High forward transfer admittance : |Yfs| = 6 S (typ.) Low leakage current : IDSS = 10 A (max) (VDS = 30 V) Enhancement-mode : Vth = 0.8~2.0 V (VDS = 10 V, ID = 1 mA) Unit: mm Maximum Ratings (Ta = 25C) Characteristics Drain-source voltage Drain-gate voltage (RGS = 20 k) Gate-source voltage Drain current DC Pulse (Note 1) (Note 1) (t = 10 s) (Note 2a) (t = 10 s) (Note 2b) Symbol VDSS VDGR VGSS ID IDP PD PD EAS IAR EAR Tch Tstg Rating 30 30 20 5 20 2.4 1.0 32.5 5 0.24 150 -55 to 150 Unit V V V A W W mJ A mJ C C JEDEC JEITA TOSHIBA 2-6J1B Drain power dissipation Drain power dissipation Weight: 0.080 g (typ.) Single pulse avalanche energy (Note 3) Avalanche current Repetitive avalanche energy (Note 2a) (Note 4) Channel temperature Storage temperature range Circuit Configuration Note: For (Note 1), (Note 2), (Note 3) and (Note 4), please refer to the next page. This transistor is an electrostatic sensitive device. Please handle with caution. 1 2002-02-06 TPC8004 Thermal Characteristics Characteristics Thermal resistance, channel to ambient (t = 10 s) (Note 2a) Thermal resistance, channel to ambient (t = 10 s) (Note 2b) Symbol Rth (ch-a) Rth (ch-a) Max 52.1 125 Unit C/W C/W Marking (Note 5) TPC8004 Type Note 1: Please use devices on condition that the channel temperature is below 150C. Note 2: (a) Device mounted on a glass-epoxy board (a) (b) Device mounted on a glass-epoxy board (b) FR-4 25.4 x 25.4 x 0.8 (unit: mm) FR-4 25.4 x 25.4 x 0.8 (unit: mm) (a) (b) Note 3: VDD = 24 V, Tch = 25C (initial), L = 1.0 mH, RG = 25 , IAR = 5 A Note 4: Reptitve rating; pulse width limited by maximum channel temperature Note 5: on lower left of the marking indicates Pin 1. shows lot number. (year of manufacture: last decimal digit of the year of manufacture, month of manufacture: January to December are denoted by letters A to L respectively.) 2 2002-02-06 TPC8004 Electrical Characteristics (Ta = 25C) Characteristics Gate leakage current Drain cut-off current Drain-source breakdown voltage Gate threshold voltage Drain-source ON resistance Forward transfer admittance Input capacitance Reverse transfer capacitance Output capacitance Rise time Symbol IGSS IDSS V (BR) DSS Vth RDS (ON) |Yfs| Ciss Crss Coss tr VDS = 10 V, VGS = 0 V, f = 1 MHz Test Condition VGS = 16 V, VDS = 0 V VDS = 30 V, VGS = 0 V ID = 10 mA, VGS = 0 V VDS = 10 V, ID = 1 mA VGS = 4 V, ID = 2.5 A VGS = 10 V, ID = 2.5 A VDS = 10 V, ID = 2.5 A Min -- -- 30 0.8 -- -- 3 -- -- -- -- Typ. -- -- -- -- 58 37 6 475 85 270 10 Max 10 10 -- 2.0 80 50 -- -- -- -- -- pF Unit A A V V m S Turn-on time Switching time Fall time ton tf toff Qg Qgs Qgd VDD 24 V, VGS = 10 V, ID = 5 A -- -- 16 13 -- ns -- Turn-off time Total gate charge (Gate-source plus gate-drain) Gate-source charge Gate-drain ("miller") charge -- -- -- -- 70 16 11 5 -- -- -- -- nC Source-Drain Ratings and Characteristics (Ta = 25C) Characteristics Drain reverse current Pulse (Note 1) Symbol IDRP VDSF IDR = 5 A, VGS = 0 V Test Condition -- Min -- -- Typ. -- -- Max 20 -1.2 Unit A V Forward voltage (diode) 3 2002-02-06 TPC8004 4 2002-02-06 TPC8004 5 2002-02-06 TPC8004 6 2002-02-06 |
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