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| MP4009 TOSHIBA Power Transistor Module Silicon PNP Triple Diffused Type (Four Darlington Power Transistors in One) MP4009 High Power Switching Applications Hammer Drive, Pulse Motor Drive Inductive Load Switching Industrial Applications Unit: mm * * * * * Small package by full molding (SIP 10 pins) High collector power dissipation (4-device operation) : PT = 4 W (Ta = 25C) High collector current: IC (DC) = -5 A (max) High DC current gain: hFE = 1000 (min) (VCE = -3 V, IC = -3 A) Complementary to MP4003 Maximum Ratings (Ta = 25C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Continuous base current Collector power dissipation (1 device operation) Collector power dissipation (4 devices operation) Junction temperature Storage temperature range DC Pulse Symbol VCBO VCEO VEBO IC ICP IB PC Rating -100 -100 -5 -5 -8 -0.1 2.0 Unit V V V A A W JEDEC JEITA TOSHIBA 2-25A1A Weight: 2.1 g (typ.) PT Tj Tstg 4.0 150 -55 to 150 W C C Array Configuration R1 R2 1 10 2 4 6 8 3 5 7 9 R1 5 k, R2 120 1 2004-07-01 MP4009 Thermal Characteristics Characteristics Thermal resistance from junction to ambient (4-device operation, Ta = 25C) Maximum lead temperature for soldering purposes (3.2 mm from case for 10 s) TL 260 C Symbol Max Unit Rth (j-a) 31.3 C/W Electrical Characteristics (Ta = 25C) Characteristics Collector cut-off current Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector-emitter Base-emitter Symbol ICBO ICEO IEBO V (BR) CBO V (BR) CEO hFE (1) hFE (2) VCE (sat) VBE (sat) fT Cob Test Condition VCB = -100 V, IE = 0 A VCE = -100 V, IB = 0 A VEB = -5 V, IC = 0 A IC = -1 mA, IE = 0 A IC = -30 mA, IB = 0 A VCE = -3 V, IC = -0.5 A VCE = -3 V, IC = -3 A IC = -3 A, IB = -12 mA IC = -3 A, IB = -12 mA VCE = -3 V, IC = -0.5 A VCB = 50 V, IE = 0 A, f = 1MHz Output 10 Min -0.3 -100 -100 1000 1000 3 Typ. 40 Max -10 -10 -2.0 -2.0 -2.5 Unit A A mA V V Saturation voltage V MHz pF Transition frequency Collector output capacitance Turn-on time ton Input IB2 IB1 0.5 Switching time IB2 Storage time IB1 tstg VCC = -30 V 3.0 s 20 s Fall time tf -IB1 = IB2 = 12 mA, duty cycle 1% 2.0 Marking MP4009 JAPAN Part No. (or abbreviation code) Lot No. A line indicates lead (Pb)-free package or lead (Pb)-free finish. 2 2004-07-01 MP4009 IC - VCE -8 -100 -30 Common -15 emitter Ta = 25C -8 Common emitter VCE = -3 V IC - VBE IC (A) -7 -6 -3 -4 -1 -2 IB = -0.3 mA 0 0 0 -2 -4 -6 -8 -10 IC (A) Collector current -6 Collector current -4 -2 Ta = 100C 25 -55 0 0 -0.8 -1.6 -2.4 -3.2 -4.0 Collector-emitter voltage VCE (V) Base-emitter voltage VBE (V) hFE - IC 10000 5000 Ta = 100C 25 Common emitter VCE = -3 V -2.8 VCE - IB Common emitter Ta = 25C hFE VCE 3000 (V) -2.4 DC current gain 1000 500 300 Collector-emitter voltage -55 -2.0 -8 -7 -6 -5 -4 -3 -2 -1 IC = -0.1 A -1.6 -1.2 100 50 -0.05 -0.1 -0.8 -0.3 -1 -3 -10 -30 Collector current IC (A) -0.4 -0.1 -0.3 -1 -3 -10 -30 -100 -300 -500 Base current IB (mA) VCE (sat) - IC -10 -10 Common emitter -5 -3 IC/IB = 250 Common emitter VBE (sat) - IC Base-emitter saturation voltage VBE (sat) (V) Collector-emitter saturation voltage VCE (sat) (V) -5 -3 IC/IB = 250 Ta = -55C 25 100 -1 Ta = -55C -1 -0.5 -0.3 -0.1 100 25 -0.5 -0.3 -0.1 -0.3 -1 -3 -10 -0.3 -1 -3 -10 Collector current IC (A) Collector current IC (A) 3 2004-07-01 MP4009 rth - tw 300 (C/W) Curves should be applied in thermal 100 limited area. (Single nonrepetitive pulse) The figure shows thermal resistance per device versus pulse width. (4) rth (1) (3) (2) Transient thermal resistance 30 10 3 -No heat sink/Attached on a circuit board(1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 0.01 0.1 1 10 Circuit board 100 1000 1 0.3 0.001 Pulse width tw (s) Safe Operating Area -30 8 PT - Ta (1) 1-device operation (2) 2-device operation (3) 3-device operation 6 (4) 4-device operation Attached on a circuit board -10 -5 10 ms* 1 ms* 100 s* Total power dissipation PT IC max (pulsed)* (W) IC (A) -3 4 (4) (3) (2) Circuit board Collector current -1 -0.5 -0.3 2 (1) 0 0 40 80 120 160 200 Ambient temperature -0.1 *: Single nonrepetitive pulse Ta = 25C VCEO max -30 -100 -200 Ta (C) -0.05 Curves must be derated linearly with increase in temperature. -0.03 -1 -3 -10 Collector-emitter voltage VCE (V) Tj - PT 160 (C) Tj (1) 120 (2) (3) (4) Junction temperature increase 80 Circuit board Attached on a circuit board 40 (1) 1-device operation (2) 2-device operation (3) 3-device operation (4) 4-device operation 0 0 1 2 3 4 5 Total power dissipation PT (W) 4 2004-07-01 |
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