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| (IPD) MIP2E4DMY MOS I 2.80.2 1.50.2 Unit : mm 10.50.5 9.50.2 8.00.2 6.70.3 * * 4.50.2 1.40.1 I 15.40.3 3.70.2 I Ta = 25C 3C 13.50.5 4.20.3 Solder Dip 1.40.1 (9.3) 2.50.2 0.6 +0.1 -0.2 0.80.1 VD VC ID IDP IC Tch Tstg 700 10 1.72 2.4 0.1 150 -55 +150 V V A A A C C 2.540.3 5.080.5 123 1 : Control 2 : Source 3 : Drain TO-220-A1 Package : MIP2E4DMY I Control 1 3 Drain S R Q Q MOSFET Max Duty Clock Sawtooth S V-I R Q Q 2 Source 2.80.2 * : 2001 8 SLB00030BJD 1 MIP2E4DMY I TC = 25C 2C fOSC MAXDC PWM * * VC = VC(CNT) - 0.2 V VC = VC(CNT) - 0.2 V 90 66 100 69 11 60 110 72 kHz % dB mA/s GPWM m VC < VC(ON) VC = VC(CNT) - 0.2 V IC(SB) IC(OP) VC(ON) VC(OFF) / VC TSW / TTIM fTIM IC(CHG) VC(CNT) * 0.05 0.7 5.1 4.1 0.5 0.30 1.8 6.0 5.0 1.0 2 0.5 0.6 2.7 6.6 5.5 1.5 mA mA V V V % Hz VC = 0 V VC = 5 V -2.5 -2.0 5.7 -1.9 -1.2 6.2 10 -1.2 - 0.5 6.6 mA V mV V VC(CNT) VD(MIN) ILIMIT 36 1.35 1.5 0.25 0.1 1.65 A s s C * * * * ton(BLK) td(OCL) TOTP VC reset RDS(ON) IDSS VDSS tr tf * * 130 2.3 ID = 0.3 A VDS = 650 V, VC = 6.5 V ID = 0.25 mA, VC = 6.5 V 700 140 3.3 4.2 V A V s s C/W C/W 5.8 10 6.7 250 0.1 0.1 3.0 70 Rth(ch-c) Rth(ch-a) ) *: 2 SLB00030BJD |
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