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| RDS070N03 Transistors Switching (30V, 7A) RDS070N03 Features 1) Low Qg. 2) Low on-resistance. 3) Excellent resistance to damage from static electricity. External dimensions (Units : mm) + 0.4- 0.1 0.1 1.27 0.15 + 1.5- 0.1 Max.1.75 + 5.0- 0.2 (5) (4) Structure Silicon N-channel MOS FET (8) + 3.9- 0.15 + 6.0- 0.3 + 0.5- 0.1 (1) Equivalent circuit (8) (7) (6) (5) (8) (7) (6) (5) ROHM : SOP8 (4) (1) (2) (3) (4) (1) (2) (3) Gate Protection Diode. A protection diode is included between the gate and the source terminals to protect the diode against static electricity when the product is in use.Use a protection circuit when the fixed voltage are exceeded. (1) (2) (3) (4) (5) (6) (7) (8) Source Source Source Gate Drain Drain Drain Drain Absolute maximum ratings (Ta = 25C) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Reverse Drain Current Source Current (Body Diode) Pulsed Continuous Pulsed Continuous Pulsed Symbol VDSS VGSS ID IDP IDR IDRP Is Isp PD Tch Tstg Limits 30 20 7 28 7 28 1.6 Unit V V A A A A A A W C C 6.4 2.5 150 -55~+150 Total Power Dissipation(Tc=25C) Channel Temperature Storage Temperature Pw10s, Duty cycle1% + 0.2- 0.1 Each lead has same dimensions RDS070N03 Transistors Thermal resistance (Ta = 25C) Parameter Channel to Ambient Symbol Rth(ch-A) Limits 62.5 Unit C/W Electrical characteristics (Ta = 25C) Parameter Gate-Source Leakage Symbol IGSS Min. - 30 - 1.0 - Static Drain-Source On-State Resistance Forward Transfer Admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge RDS(on) l Yfs l Ciss Coss Crss td(on) tr td(off) tf Qg Qgs Qgd - - 5 - - - - - - - - - - Typ. - - - - 23 38 47 - 470 260 105 10 14 35 12 14 2 4 Max. 10 - 10 2.5 - - - - - - - - - - - 28 - - S pF pF pF ns ns ns ns nC nC nC m Unit A V A V Test Conditions VGS=20V, VDS=0V ID=1mA, VGS=0V VDS=30V, VGS=0V VDS=10V, ID=1mA ID=7A, VGS=10V ID=7A, VGS=4.5V ID=7A, VGS=4.0V ID=7A, VDS=10V VDS=10V VGS=0V f=1MHz ID=3.5A, VDD 15V VGS=10V RL=4.3 RGS=10 VDD=15V VGS=10V ID=7A Drain-Source Breakdown Voltage V(BR) DSS Zero Gate Voltage Drain Current Gate Threshold Voltage IDSS VGS(th) Pulsed Body diode characteristics (Source-Drain characteristics) (Ta = 25C) Parameter Forward Voltage Reverse Recovery Time Reverse Recovery Charge Symbol VSD trr Qrr Min. - - - Typ. - 46 46 Max. 1.5 - - Unit V ns nC Test Conditions Is=6.4A, VGS=0V IDR=5.2A, VGS=0V di/dt=100A/s Pulsed RDS070N03 Transistors Electrical characteristic curves FORWARD TRANSFER ADMITTANCE : I YfS I (S) 10 REVERSE DREIN CURRENT : IDR (A) 1 Ta=125C 75C 25C -25C 10 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VDS=0V Pulsed 100 VDS=10V Pulsed 1 0.1 1 Ta=-25C 25C 75C 125C 0.1 0.01 0.1 Ta=125C 75C 25C -25C 0.01 0.0 0.5 1.0 1.5 0.01 0.01 0.1 1 10 100 0.001 0.1 1 10 VGS=4.5V Pulsed 100 SOURCE - DRAIN VOLTAGE : VGS (V) DRAIN CURRENT : ID (A) DRAIN CURRENT : ID (A) Fig.1 Reverse Drein Current vs. Source-Drain Voltage Fig.2 Forward Transfer Admittance vs. Drain Current Fig.3 Static Drain-Source On-State Resistance vs. Drain Current () 1 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () VGS=10V Pulsed 0.05 VGS=10V 0.045 Pulsed 0.04 STATIC DRAIN-SOURCE ON-STATE RESISTANCE : RDS(on) () 0.08 Ta=25C Pulsed 0.06 ID=7A 0.1 0.035 0.03 ID=7V 0.02 0.025 0.04 0.01 Ta=125C 75C 25C -25C 0.015 0.01 ID=3.5A 0.02 0.005 0 -50 -25 0 25 50 75 100 125 150 0.001 0.1 1 10 100 0 0 5 10 15 20 DRAIN CURRENT : ID (A) CHANNEL TEMPERATURE : Tch (C) GATE-SOURCE VOLTAGE : VGS (V) Fig.4 Static Drain-Source On-State Resistance vs. Drain Current () Fig.5 Static Drain-Source On-State Resistance vs. Channel Temperature Fig.6 Static Drain-Source On-State Resistance vs. Gate-Source Voltage GATE THRESHOLD VOLTAGE : VGS(th) (V) 4 DRAIN-SOURCE VOLTAGE : VDS (V) 3 CAPACITANCE : C (pF) Ciss 25 20 15 10 5 0 0 VDS=24V VDS=15V VDS=10V 10 8 6 4 Coss 100 Crss 2 1 0 -50 -25 0 25 50 75 100 125 150 Ta=25C f=1MHz 10 VGS=0V 0.1 1 10 100 2 4 6 8 Ta=25C 2 ID=7A Pulsed 0 14 10 12 CHANNEL TEMPERATURE : Tch (C) DRAIN-SOURCE VOLTAGE : VDS (V) TOTAL GATE CHARGE : Qg (nC) Fig.7 Gate Threshold Voltage vs. Channel Temperature Fig.8 Typical Capacitance vs. Drain-Source Voltage Fig.9 Dynamic Input Characteristics GATE-SOURCE VOLTAGE : VGS (V) VDS=10V ID=1mA Pulsed 1000 30 VDS=10V VDS=15V VDS=24V 12 RDS070N03 Transistors 10000 10 SWITCHING TIME : t (ns) 1000 100 tf td(off) DRAIN CURRENT : ID (A) Ta=25C VDD 15V VGS=10V RG=10 Pulsed 10V 4.5V 4.0V 5.0V 6.0V Ta=25C Pulsed 3.5V 5 3.0V tr 10 td(on) VGS=2.5V 1 0.01 0.1 1 10 0 0 1 2 3 4 5 DRAIN CURRENT : ID (A) DRAIN-SOURCE VOLTAGE : VDS (V) Fig.10 Switching Characteristics Fig.11 Typical Output Characteristics 10 NORMALIZED TRANSIENT : r (t) THERMAL RESISTANCE 1 D=1 D=0.5 D=0.2 0.1 D=0.1 D=0.05 D=0.02 D=0.01 D=Single Tc=25C th(ch-c) (t)=r(t) th(ch-c) th(ch-c)=6.25C / W PW T D=PW T 0.01 0.001 10 100 1m 10m 100m 1 10 100 PULSE WIDTH : PW (s) Fig.12 Normalized Transient Thermal Resistance vs. Pulse Width |
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