 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| Transistors MSG43004 SiGe HBT type For low-noise RF amplifier 0.600.05 Unit: mm Features * Compatible between high breakdown voltage and high cut-off frequency * Low noise, high-gain amplification * Optimal size reduction and high level integration for ultra-small packages 3 2 1 1.000.05 0.39+0.01 -0.03 0.150.05 0.050.03 0.350.01 0.250.05 0.500.05 0.250.05 1 Absolute Maximum Ratings Ta = 25C Parameter Collector-base voltage (Emitter open) Collector-emitter voltage (Base open) Emitter-base voltage (Collector open) Collector current Collector power dissipation * Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Rating 9 6 1 100 100 125 -55 to +125 Unit V V V mA mW C C 3 0.650.01 2 0.050.03 1: Base 2: Emitter 3: Collector ML3-N2 Package Marking Symbol: 5Y Note) *: Copper plate at the collector is 5.0 mm2 on substrate at 10 mm x 12 mm x 0.8 mm. Electrical Characteristics Ta = 25C 3C Parameter Collector-base cutoff current (Emitter open) Collector-emitter cutoff current (Base open) Emitter-base cutoff current (Collector open) Forward current transfer ratio Transition frequency * * Symbol ICBO ICEO IEBO hFE fT S21e2 NF Cob Conditions VCB = 9 V, IE = 0 VCE = 6 V, IB = 0 VEB = 1 V, IC = 0 VCE = 3 V, IC = 15 mA VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 3 V, IC = 30 mA, f = 2 GHz VCE = 3 V, IC = 15 mA, f = 2 GHz VCB = 3 V, IE = 0, f = 1 MHz Min Typ Max 1 1 1 Unit A A A GHz dB 100 17 6.0 9.0 1.4 0.6 220 Forward transfer gain * Noise figure Collector output capacitance (Common base, input open circuited) * 2.0 0.9 dB pF Note) 1. Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 measuring methods for transistors. 2. Observe precautions for handling. Electrostatic sensitive devices. 3. *: Verified by random sampling Publication date: November 2004 SJC00320BED 1 MSG43004 PC Ta 120 14 IB = 10 A step 12 IC VCE 180 160 hFE IC VCE = 3 V Collector power dissipation PC (mW) 100 Forward current transfer ratio hFE 80 A 70 A 60 A Collector current IC (mA) 140 120 100 80 60 40 20 0 10 8 80 60 50 A 40 A 30 A 20 A 6 4 2 0 40 20 10 A 0 1 2 3 4 5 6 0 0 40 80 120 0 0 1 10 100 Ambient temperature Ta (C) Collector-emitter voltage VCE (V) Collector current IC (mA) fT I C Collector output capacitance C (pF) (Common base, input open circuited) ob 25 VCE = 3 V f = 2 GHz Cob VCB 1 f = 1 MHz Ta = 25C 15 GP I C VCE = 3 V f = 2 GHz Transition frequency fT (GHz) 20 10 15 Power gain GP (dB) 0.1 0 2 4 6 8 10 12 5 10 0 5 -5 0 1 10 100 -10 0.1 1 10 100 Collector current IC (mA) Collector-base voltage VCB (V) Collector current IC (mA) S21e2 IC 14 12 VCE = 3 V f = 2 GHz 7 6 NF IC VCE = 3 V f = 2 GHz S11 , S22 1.0 0.5 2.0 VCE = 3 V IC = 30 mA Forward transfer gain S21e (dB) 2 Noise figure NF (dB) 10 8 6 5 4 S11 0 0.3 S22 1.0 3.0 3 4 2 0 2 1 - 0.5 1 10 100 0 0.1 1 10 100 -2.0 -1.0 Collector current IC (mA) Collector current IC (mA) 2 SJC00320BED MSG43004 S21e2 , S12e2 f 50 40 Forward transfer gain S21e , 2 Reverse transfer gain S12e (dB) 30 20 10 0 S21e 2 2 -10 -20 -30 -40 -50 0 0.5 1.0 1.5 2.0 2.5 3.0 S12e 2 Frequency f (GHz) SJC00320BED 3 |
Price & Availability of MSG43004
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |