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GaAs MMICs
GN8061
GN8061
GaAs IC
For semiconductor laser drive s Features
q q q
1 2 3 4 6.40.2 8 7 6 5
Unit : mm
High output Pulse current and DC bias current can be controlled.
10max. 2.540.25
High-speed switching
0.7min. 4.5max. 4.0max.
s Absolute Maximum Ratings (Ta = 25C)
Parameter Power supply voltage Symbol VDD VSS VIb1* 1 VIb2 Pin voltage VIN VIp
*5
Rating 6 -6 6 0.5 - 0.5 to VDD -1.5 1.5 to 6 6 55 40 225 700 150 - 55 to +150 -10 to + 75
Unit V V
0 to 15 7.620.2
V V V V V mA mA mA mW C C C
1 : GND 2 : VIb1 3 : VIb2 0.35max. 4 : OUT 5 : VIP 6 : VDD 7 : VIN 8 : VSS 8-Lead Plastic DIL Package
VOUT* 1 Power current Output current Allowable power dissipation Channel temperature Storage temperature Operating ambient temperature
*1 *2 *3 *4 *5
IDD* 4 ISS IOUT PD* 2 Tch Tstg Topr* 3
Do not apply the voltage higher than the set VDD . Guaranteed for the unit in the natural atmosphere. IC circuit functioning range. Note however that the electrical characteristics shown at Ta= 25C is not guaranteed. IDD is a current when the pulse output current and bias output current are zero. Voltage when the constant current source has been connected.
s Electrical Characteristics (Ta = 25C)
Parameter Pulse output current Symbol Ipmax. Ipmin. Ibmax. Bias output current Ibmin. 1 Ibmin. 2 Supply current Input voltage Rise time Fall time IDD ISS VIH VIL tr
*2 *1
Test circuit 1 1 2 2 2 2 2
Condition VIN= 2.0V, VIb2= - 5V VIN= 0.4V, VIb2= - 5V IP= 0, VIb1= 5V, VIb2= 0 IP= 0, VIb1= 0, VIb2= 0 IP= 0, VIb1= 5V, VIb2= - 5V VIb1= 5V, VIb2 = - 5V, VIN = 0.4V IP= 0
Min 100 80
Typ 120 1 100 1 0.05 35 25
Max 5 5 0.1 55 40 0.4
Unit mA mA mA mA mA mA mA V V ns ns
2.5 3 3 7 5
tf* 2
VIb1= 0, VIb2 - 5V, IP =100mA
Note : Following condition is applied unless otherwise specified: VDD = 5V, VSS= - 5V, VIb1= 0V, VIb2= 0V Set the supply current of constant current source to IP=120mA and load resistance to RL=10
1.3typ.
0.5
GaAs MMICs
GN8061
*1 *2
The current value to be supplied from the 5V power supply is a total sum of this value plus the pulse output current and bias output current. Waveform of input and output signals
Input signal
2S
Output waveform
90%
10S
10%
2.5V min. 0.4V max. of the input * The rise/fall timeis 2ns (10 tosignal 90%)
tr
tf tr *** 10% to 90% tf *** 90% to 10%
Test circuit 1
VIN C2 -5V C1 - + C2 8 7 6 5 + - 5V C1 IP=120mA
Test circuit 2
0.4V C2 -5V C1 - + C2 8 7 6 5 + - 5V C1 IP=0mA
1
2
3
4 A
1
2
3
4 A
0V
-5V
R1 C1 + 5V - C2
VIb1
VIb2
R1 C1 + 5V - C2
Test circuit 3
PULSE GENERATOR -5V C1 - + C2 8 7 6 5 R2 C2 + - 5V C1 IP=100mA
C1 : 0.1F C2 : 3.3F C3 : 2200pF R1 : 10 R2 : 50
1
2
3
4 C3 R1 + 5V - C2
C3 -5V FET PROBE C1
GaAs MMICs
s Block Diagram
GN8061
INSIDE GN8061 VDD VIN
OUTSIDE GN8061 +5V LASER DIODE OUT
VSS
VSS VDD
VDD VIb1 (0 to 5V) VSS VIb2(-5 to 0V)
VSS VIP
VSS from CONTROL CIRCUIT
s Caution for Handling
1) The recommended VIN voltage is 2.5 to 3V for [H] and 0 to 0.4V for [L]. 2) Do not apply V IN while the power supply is OFF. 3) For the current source to be connected to the V IP pin, use a Si bipolar transistor as shown in the circuit diagram. (Example: 2SD874) To connect a resistor to the emitter or collector, use a resistor of a few ohm. The use of higher resistor may cause large change in the voltage at the VIP pin, and may make the output waveform distortion. (See the pulse output current control example). To use another current control circuit, set so that the VIP pin voltage becomes around 2V. 4) When mounting, minimize the connection distance between the semiconductor laser and IC, and use the chip parts (C, R) of less parasitic effects. 5) Attention to damage by the power surge (see the example connection of the pin protection circuit). During handling, take care to ground the human body and solder iron tip. 6) The current value of the current source connected to the VIP pin should be zero to protect the semiconductor laser when the power supply is turned ON and OFF. When the power supply is ON, make VSS to rise earlier than VDD. When the power supply is OFF, make VDD to fall earlier than V SS . When V DD = 5V, VSS = 0 even transitionary, the current of about 30mA flows through the semiconductor laser. 7) Pay attention to release the heat.
MA3068(VZ=6.8V,Cd=85pF,RZ=6)
GN8061 100 to 200W 3k to 5kW GND VSS VIb1 VIN 200 to 2k -5.0V 50
VIb2 VDD OUT VIP
5.0V
Connection example of pin protection circuit
GN8061 GND VSS VIb1 VIN
VIb2 VDD OUT VIP - + IB I COLLECTOR
0.22mF 5 VEE=-5 to 0V
Example of pulse output current control circuit
GaAs MMICs
GN8061
PD - Ta
1000
Ib - Vlb2
200 VDD=5V VSS=-5V VIb1=5V IP=0
Pulse output current IP (mA)
IP - VDD
120 IP max(VIN=2.5V) 100 VSS=-5V VIb1=0 VIb2=-5V IP=100mA (at VDD=5V)
Allowable power dissipation PD (mW)
800
Bias output current Ib (mA)
160
80
600
120
60
400
80
40 IP min(VIN=0.4V) 20
200
40
0 0 50 100 150 200 Ambient temperature Ta (C)
0 0 -0.4 -0.8 -1.2 -1.6 -2.0 Pin voltage VIb2 (V)
0 0 1 2 3 4 5 6 Supply voltage VDD (V)
IP - VSS
120 VDD=5V VIb1=0 VIb2=-5V IP=100mA(at VSS=-5V) IP max(VIN=2.5V) 6
tr - IP
VDD=5V VSS=-5V VIb1=0 VIb2=-5V 6
tf - IP
VDD=5V VSS=-5V VIb1=0 VIb2=-5V
100
Pulse output current IP (mA)
5
5
Rise time tr (ns)
60
IP min(VIN=0.4V)
3
Fall time tf (ns)
0 50 100 150
80
4
4
3
40
2
2
20
1
1
0 0 -1 -2 -3 -4 -5 -6 Supply voltage VSS (V)
0 Pulse output current IP (mA)
0 0 50 100 150 Pulse output current IP (mA)
tr - VDD
10 VSS=-5V VIb1=0 VIb2=-5V IP=50mA 10
tf - VDD
VSS=-5V VIb1=0 VIb2=-5V IP=50mA 10
tr - VSS
VDD=5V VIb1=0 VIb2=-5V IP=100mA
8
8
8
Rise time tr (ns)
6
6
Rise time tr (ns)
Fall time tf (ns)
6
4
4
4
2
2
2
0 0 1 2 3 4 5 Supply voltage VDD (V)
0 0 1 2 3 4 5 Supply voltage VDD (V)
0 0 -1 -2 -3 -4 -5 Supply voltage VSS (V)
GaAs MMICs
GN8061
tf - VSS
10 VDD=5V VIb1=0 VIb2=-5V IP=100mA
8
Fall time tf (ns)
6
4
2
0 0 -1 -2 -3 -4 -5 Supply voltage VSS (V)

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