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| DSEC 30-03A HiPerFREDTM Epitaxial Diode with common cathode and soft recovery IFAV = 2x 15 A VRRM = 300 V trr = 30 ns TO-247 AD VRSM V 300 VRRM V 300 Type DSEC 30-03A A C A A C A C (TAB) A = Anode, C = Cathode, TAB = Cathode Symbol IFRMS IFAVM IFSM EAS IAR TVJ TVJM Tstg Ptot Md Weight Conditions TC = 140C; rectangular, d = 0.5 TVJ = 45C; tp = 10 ms (50 Hz), sine TVJ = 25C; non-repetitive IAS = 2.5 A; L = 180 H VA = 1.5*VR typ.; f = 10 kHz; repetitive Maximum Ratings 50 15 110 0.8 0.3 -55...+175 175 -55...+150 A A A mJ A C C C W Nm g Applications q Features q q q q q q q International standard package Planar passivated chips Very short recovery time Extremely low switching losses Low IRM-values Soft recovery behaviour Epoxy meets UL 94V-0 TC = 25C mounting torque typical 95 0.8...1.2 6 q q q Symbol IR x Conditions TVJ = 25C VR = VRRM TVJ = 150C VR = VRRM IF = 15 A; TVJ = 150C TVJ = 25C Characteristic Values typ. max. 100 0.5 1.20 1.67 1.6 0.25 mA mA V V K/W K/W ns 2.7 A q VF y RthJC RthCH trr IRM q q q Antiparallel diode for high frequency switching devices Antisaturation diode Snubber diode Free wheeling diode in converters and motor control circuits Rectifiers in switch mode power supplies (SMPS) Inductive heating Uninterruptible power supplies (UPS) Ultrasonic cleaners and welders IF = 1 A; -di/dt = 100 A/ms; VR = 30 V; TVJ = 25C VR = 100 V; IF = 25 A; -diF/dt = 100 A/ms TVJ = 100C 30 Advantages q q q Avalanche voltage rated for reliable operation Soft reverse recovery for low EMI/RFI Low IRM reduces: - Power dissipation within the diode - Turn-on loss in the commutating switch Pulse test: x Pulse Width = 5 ms, Duty Cycle < 2.0 % y Pulse Width = 300 ms, Duty Cycle < 2.0 % Data according to IEC 60747 and per diode unless otherwise specified Dimensions see outlines.pdf (c) 2000 IXYS All rights reserved 1-2 008 IXYS reserves the right to change limits, test conditions and dimensions. DSEC 30-03A 40 A IF 30 TVJ=150C TVJ=100C 20 TVJ= 25C Qr 500 TVJ = 100C nC 400 IRM 300 IF = 30A IF = 15A IF = 7.5A 200 VR = 150V 20 TVJ = 100C A 15 VR = 150V IF = 30A IF = 15A IF = 7.5A 10 10 100 5 0 0 1 VF V 2 0 100 0 A/ms 1000 -diF/dt 0 200 400 600 A/ms 1000 800 -diF/dt Fig. 1 Forward current IF versus VF Fig. 2 Reverse recovery charge Qr Fig. 3 Peak reverse current IRM 1.4 80 ns TVJ = 100C VR = 150V 14 V 12 VFR tfr VFR TVJ = 100C IF = 15A 0.85 s 0.80 tfr 0.75 1.2 Kf trr 70 IF = 30A IF = 15A IF = 7.5A 60 1.0 IRM Qr 0.8 40 50 10 8 0.70 6 0.65 0.6 0 40 80 120 C 160 TVJ 30 0 200 400 600 -diF/dt 800 A/ms 1000 4 0 200 400 0.60 600 A/ms 1000 800 diF/dt Fig. 4 Dynamic parameters Qr, IRM Fig. 5 Recovery time trr versus -diF/dt Fig. 6 Peak forward voltage VFR and tfr 10 K/W 1 ZthJC 0.1 Constants for ZthJC calculation: i 1 2 3 Rthi (K/W) 0.851 0.328 0.421 ti (s) 0.005 0.0003 0.041 0.01 0.001 0.00001 DSEC 30-03A 0.0001 0.001 0.01 0.1 t s 1 Fig. 7 Transient thermal resistance junction to case NOTE: Fig. 2 to Fig. 6 shows typical values 008 (c) 2000 IXYS All rights reserved 2-2 |
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