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2N6284 2N6287
COMPLEMENTARY SILICON POWER DARLINGTON TRANSISTORS
s s s
SGS-THOMSON PREFERRED SALESTYPES COMPLEMENTARY PNP - NPN DEVICES INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE
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APPLICATIONS LINEAR AND SWITCHING INDUSTRIAL EQUIPMENT DESCRIPTION The 2N6284 is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration mounted in Jedec TO-3 metal case. It is inteded for general purpose amplifier and low frequency switching applications. The complementary PNP types is 2N6287.
1 2
TO-3
INTERNAL SCHEMATIC DIAGRAM
R1 Typ. = 8 K
R2 Typ. = 60
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter NPN PNP V CBO V CEO V EBO IC I CM IB P tot T stg Tj Collector-Base Voltage (I E = 0) Collector-Emitter Voltage (I B = 0) Emitter-Base Voltage (I C = 0) Collector Current Collector Peak Current Base Current Total Dissipation at T c 25 o C Storage Temperature Max. Operating Junction Temperature Value 2N6284 2N6287 100 100 5 20 40 0.5 160 -65 to 200 200 V V V A A A W
o o
Unit
C C
For PNP types voltage and current values are negative.
June 1997
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2N6284 / 2N6287
THERMAL DATA
R thj-case Thermal Resistance Junction-case Max 1.09
o
C/W
ELECTRICAL CHARACTERISTICS (Tcase = 25 oC unless otherwise specified)
Symbol I CEV I CEO I EBO Parameter Collector Cut-off Current (V BE = -1.5V) Collector Cut-off Current (I B = 0) Emitter Cut-off Current (I C = 0) Test Conditions V CE = rated V CEO V CE = rated V CEO V CE = 50 V V EB = 5 V I C = 100 mA I C = 10 A I C = 20 A I C = 20 A I C = 10 A I C = 10 A I C = 20 A IC = 3 A I B = 40 mA I B = 200 mA I B = 200 mA V CE = 3 V V CE = 3 V V CE = 3 V V CE = 10 V f = 1KHz f = 100KHz 400 600 pF pF 750 100 300 100 2 3 4 2.8 18000 T c = 150 C
o
Min.
Typ.
Max. 0.5 5 1 2
Unit mA mA mA mA V V V V V
V CEO(sus) Collector-Emitter Sustaining Voltage V CE(sat) V BE(sat) V BE h FE hfe C CBO Collector-Emitter Saturation Voltage Base-Emitter Saturation Voltage Base-Emitter Voltage DC Current Gain Small Signal Current Gain Collector Base Capacitance
IE = 0 V CB = 10 V for NPN types for PNP types
Pulsed: Pulse duration = 300 s, duty cycle 1.5 %
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2N6284 / 2N6287
TO-3 MECHANICAL DATA
mm MIN. A B C D E G N P R U V 11.00 0.97 1.50 8.32 19.00 10.70 16.50 25.00 4.00 38.50 30.00 TYP. MAX. 13.10 1.15 1.65 8.92 20.00 11.10 17.20 26.00 4.09 39.30 30.30 MIN. 0.433 0.038 0.059 0.327 0.748 0.421 0.649 0.984 0.157 1.515 1.187 inch TYP. MAX. 0.516 0.045 0.065 0.351 0.787 0.437 0.677 1.023 0.161 1.547 1.193
DIM.
P G
A
D C
U
V
O
N
R
B
P003F
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E
2N6284 / 2N6287
Information furnished is believed to be accurate and reliable. However, SGS-THOMSON Microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may results from its use. No license is granted by implication or otherwise under any patent or patent rights of SGS-THOMSON Microelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. SGS-THOMSON Microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of SGS-THOMSON Microelectonics. (c) 1997 SGS-THOMSON Microelectronics - Printed in Italy - All Rights Reserved SGS-THOMSON Microelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - France - Germany - Hong Kong - Italy - Japan - Korea - Malaysia - Malta - Morocco - The Netherlands Singapore - Spain - Sweden - Switzerland - Taiwan - Thailand - United Kingdom - U.S.A ...
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