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| MITSUBISHI SEMICONDUCTOR Technical Note Specifications are subject to change without notice. MGF7169C UHF BAND GaAs POWER AMPLIFIER DESCRIPTION The MGF7169C is a monolithic microwave integrated circuit for use in CDMA base handheld phone. PIN CONFIGURATION (TOP VIEW) Pi Vg1 Vd1 MC Vg2 : RF input Pi : RF output Po Vd1 : Drain bias 1 Vd2 : Drain bias 2 : Gate bias Vg MC : Note1 GND : Connect to GND CASE : Connect to GND Note1:Connect to matching circuit GND GND Vd2 / Po FEATURES Low voltage operation : Vd=3.0V High output power : Po=28dBm typ. @f=1.85~1.91GHz Low distortion : ACP=-46dBc max. @Po=28dBm High efficiency : Id=520mA typ. @Po=28dBm Small size : 7.0 x 6.1 x 1.1 mm Surface mount package 2 Stage Amplifier External matching circuit is required APPLICATION 1.9GHz band handheld phone QUALITY GRADE GG Block Diagram of this IC and Application Circuit Example. VDD Regulator Battery VD1 VD2 Matching circuit MGF7169C Matching circuit HPA VG1 VG2 Pin Pout Negative voltage generator *Mitsubishi Electric Corporation puts the maximum effort into making semiconductor products better and reliable, but there is always the possibility that trouble may occur with them. Trouble with semiconductors may lead to personal injury, fire or property damage. Remember to give due consideration to safety when making your circuit designs, with appropriate measures such as (i) placement of substitutive, auxiliary, circuits, (ii) use of non-flammable material or (iii) prevention against any malfunction or mishap. MITSUBISHI ELECTRIC (1/20) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER ABSOLUTE MAXIMUM RATINGS (Ta=25C) Symbol Vd1,Vd2 Vg Pi Tc(op) Tstg Parameter Drain supply voltage Gate supply voltage Input power Operating case temperature Storage temperature Ratings 6 -4 15 -30 ~ +85 -30 ~ +100 Unit V V dBm C C *1.Each maximum rating is guaranteed independently. ELECTRICAL CHARACTERISTICS (Ta=25C) Symbol f Parameter frequency ACP<-42dBc (1.25MHz off-set.) Vd1=Vd2=3.0V ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.0V Test conditions MIN 1850 Limits TYP MAX Unit -- 450 480 1910 MHz -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -- -3 -30 3 dBm mA dBc mA mA Idt Total drain current ACP<-46dBc (1.25MHz off-set.) Vd1=Vd2=3.0V ACP<-44dBc (1.25MHz off-set.) Vd1=Vd2=3.3V 520 450 Idle_Id Pout Ig 2sp rin Idle current Output power Gate current 2nd harmonics input VSWR Vg1=Vg2=-2.0V, Po=28dBm Vg1=Vg2=-2.5V, Po=12dBm 150 50 28 Vd1=Vd2=3.0V,Vg1=Vg2=-2.0V, Pin=7dBm CDMA modulated signal based on IS-95 STD. (1.2288Mbps spreading,OQPSK) Vd1=Vd2=3.0V, Pin=7dBm, Load VSWR=10, All phase Time=10 sec Vd1=Vd2=3.0V, Pin=7dBm, Load VSWR=3:1, All phase -- -- -- -- -- Damage with-standing Note No damage -- Stability Note No oscillation Spurious level-60dBc *CDMA is code division multiple Access. OQPSK is modulation method, off-set quadrature phase shift keying. Electrical characteristics are changed by the external matching circuit. Limits are guaranteed by using MITSUBISHI test fixture. Note : Sampling inspection MITSUBISHI ELECTRIC (2/20) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information Pin vs. Pout,Id for CDMA 35 30 25 Pout Pout (dBm) 20 15 10 5 0 -12 MGF7169C UHF BAND GaAs POWER AMPLIFIER 1400 1200 1000 Idt Id2 Id (mA) Fin=1880MHz Vd1=Vd2=3.0V Vg1=Vg2=-2.0V CDMA evaluation Fin=1880MHz Vd1=Vd2=3.0V Vg1=Vg2=-2.0V CDMA evaluation 800 600 400 Id1 200 0 -8 -4 0 4 8 12 16 Pin (dBm) Pin vs. Pout,Efficiency for CDMA 35 30 25 Pout (dBm) 20 15 10 5 0 -12 Efficiency 70 60 50 40 30 20 10 0 -8 -4 0 4 8 12 16 Pin (dBm) Efficiency (%) Pout MITSUBISHI ELECTRIC (3/20) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information Pin vs.Pout,Gain for CDMA 35 30 Pout 25 Pout (dBm) MGF7169C UHF BAND GaAs POWER AMPLIFIER 35 30 25 20 15 10 5 0 -8 -4 0 4 8 12 16 Pin (dBm) Fin=1880MHz Vd1=Vd2=3.0V Vg1=Vg2=-2.0V CDMA evaluation GAIN (dB) ACPR (dBc) Fin=1880MHz Vd1=Vd2=3.0V Vg1=Vg2=-2.0V CDMA evaluation Gain 20 15 10 5 0 -12 Pin vs. Pout,ACPR for CDMA 35 30 25 Pout (dBm) 20 15 10 5 0 -12 ACPR Pout 15 5 -5 -15 -25 -35 -45 -55 -8 -4 0 4 8 12 16 Pin (dBm) MITSUBISHI ELECTRIC (4/20) Aug '97 MITSUBISHI SEMICONDUCTOR Preliminary information Spectral Plot of CDMA ACPR=-32.31dBc MGF7169C UHF BAND GaAs POWER AMPLIFIER Harmonics 2SP=-53.3dBc 3SP=-31.3dBc Fin=1880MHz Vd1=Vd2=3.0V Vg1=Vg2=-2.0V Pout=28dBm CDMA evaluation MITSUBISHI ELECTRIC (5/20) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information Vd dependence of Pin vs.Pout,Idt 35 30 25 Pout (dBm) 20 15 Idt 10 5 0 -12 Pout MGF7169C UHF BAND GaAs POWER AMPLIFIER 1400 1200 1000 Id (mA) 800 600 400 200 0 -8 -4 0 4 8 12 16 Pin (dBm) Vd=2.6V Vd=3.0V Vd=3.4V Fin=1880MHz Vg1=Vg2=-2.0V CDMA evaluation Vd dependence of Pin vs.Pout,Efficiency 35 30 25 Pout (dBm) 20 15 10 5 0 -12 Efficiency Pout 70 60 50 40 30 20 10 0 -8 -4 0 4 8 12 16 Pin (dBm) Fin=1880MHz Vg1=Vg2=-2.0V CDMA evaluation Efficiency (%) Vd=2.6V Vd=3.0V Vd=3.4V MITSUBISHI ELECTRIC (6/20) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information Vd dependence of Pin vs.Pout,Gain 35 30 25 Pout (dBm) 20 Gain 15 10 5 0 -12 Pout MGF7169C UHF BAND GaAs POWER AMPLIFIER 35 30 25 20 15 10 5 0 -8 -4 0 4 8 12 16 Pin (dBm) GAIN (dB) Vd=2.6V Vd=3.0V Vd=3.4V Fin=1880MHz Vg1=Vg2=-2.0V CDMA evaluation Vd dependence of Pin vs.Pout,ACPR 35 30 Pout 25 Pout (dBm) 20 15 10 5 0 -12 ACPR -5 -15 -25 -35 -45 -55 -8 -4 0 4 8 12 16 Pin (dBm) Fin=1880MHz Vg1=Vg2=-2.0V CDMA evaluation ACPR (dBc) 15 5 Vd=2.6V Vd=3.0V Vd=3.4V MITSUBISHI ELECTRIC (7/20) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information Vd dependence of Fin vs. Gain,Idt 30 Idt 25 (dB) MGF7169C UHF BAND GaAs POWER AMPLIFIER 600 400 Idt (mA) Gain 20 Gain Vd=2.6V Vd=3.0V Vd=3.4V Fin=1880MHz Vg1=Vg2=-2.0V CDMA evaluation 200 15 1.84 1.86 1.88 1.90 Frequency (GHz) 0 1.92 Vd dependence of Fin vs. Id1,Id2 150 Id2 600 100 (mA) 400 Id2 (mA) Id1 50 Id1 200 Vd=2.6V Vd=3.0V Vd=3.4V 0 1.84 1.86 1.88 1.90 Frequency (GHz) 0 1.92 Fin=1880MHz Vg1=Vg2=-2.0V CDMA evaluation MITSUBISHI ELECTRIC (8/20) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER Vd dependence of Fin vs. Gain,Efficiency 35 Efficiency 50 Efficiency (%) 30 (dB) 40 Gain Vd=2.6V Vd=3.0V Vd=3.4V Fin=1880MHz Vg1=Vg2=-2.0V CDMA evaluation 25 Gain 30 20 1.84 1.86 1.88 1.90 Frequency (GHz) 20 1.92 Vd dependence of Fin vs. Gain,ACPR 25 -10 Gain ACPR 15 -30 ACPR (dBc) 20 (dB) Gain -20 Vd=2.6V Vd=3.0V Vd=3.4V 10 1.84 1.86 1.88 1.90 1.92 Frequency (GHz) -40 Fin=1880MHz Vg1=Vg2=-2.0V CDMA evaluation MITSUBISHI ELECTRIC (9/20) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER Temp. dependence of Fin vs. Gain,ACPR 25 -10 20 (dB) -20 ACPR+1.25MHz (dBc) Gain Gain f=1.85GHz f=1.88GHz f=1.91GHz Vd1=Vd2=3.0V Vg1=Vg2=-2.0V Pout=28dBm 15 ACPR 10 -30 -10 10 30 50 70 90 Temperature (Ae) -30 -40 Temp. dependence of Fin vs. Id1,Id2 150 Id2 600 500 400 300 50 200 100 0 -30 -10 10 30 50 70 90 Temperature (Ae) 0 Id2 (mA) 100 (mA) Id1 Id1 f=1.85GHz f=1.88GHz f=1.91GHz Vd1=Vd2=3.0V Vg1=Vg2=-2.0V Pout=28dBm MITSUBISHI ELECTRIC (10/20) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER Equivalent Circuit of Test Board for CDMA(1.85-1.91GHz) l=8.0 w=1.0 Pin l=8.5 w=1.0 1.5pF l=2.0 w=1.0 MGF 7169C 2.5pF Vd2 l=23.5 w=0.5 l=2.0 w=2.2 1000pF 4.5pF Pout l=11.0 w=1.0 4.0pF Unit:mm SUB. data Er=4.8 H=600 mm Metal T=43 mm MITSUBISHI ELECTRIC (11/20) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER Test Circuit Board for CDMA(1.85-1.91GHz) 2.5pF 1.5pF Pin 1000pF 1000pF 10Ohm 1000pF 4.0pF Pout 4.5pF 3K Ohm (This will be included in PKG for Mass Production) 1000pF Vg1 Vd1 Vg2 1000pF Vd2 40 x 60 mm SUB. data ER=4.8 H=600m Metal T=43m MITSUBISHI ELECTRIC (12/20) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER VG1 VG2 Pin FET1 Matching circuits FET2 Pout VD1 VD2 ZI(ES) ZL(ES) Equivalent circuit of MGF7169C with our test board : MGF7169C(Ceramic package) : our test board(Er=4.8, t=0.6mm) MITSUBISHI ELECTRIC (13/20) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER Input/Output Impedance (@1.85-1.91GHz) ZI(ES) = 6.8 - j22.7 () f=1.85GHz 6.7 - j21.3 () f=1.88GHz 6.6 - j19.8 () f=1.91GHz ZL(ES) = 4.3 - j3.2 () f=1.85GHz 4.2 - j2.7 () f=1.88GHz 4.0 - j2.3 () f=1.91GHz ZL(ES) on SMITH CHART X 1.88GHz X X 1.85GHz 1.91GHz Conditions; Vd1=Vd2=3.0V Vg1=Vg2=-2.0V Pout=28dBm MITSUBISHI ELECTRIC (14/20) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information OUTLINE DRAWING Note1 MGF7169C UHF BAND GaAs POWER AMPLIFIER Unit : mm 6.1+/-0.2 5.2 0.3 1 8 7.0+/-0.2 2 3 4 6 5 7 6.2 1.1+/-0.2 4 - R0.2 0.3 2 - (2.4) 8 - (0.5) 8 - (0.4) Terminal Connection P1.27 x 4 = 5.08+/-0.1 (1.2) 1 2 3 RF IN (Pi) Vg1 4.28 6 - 0.8+/-0.1 4.1 8 - (4.9) 2 - (0.1) Note1 : 1 pin mark Note2 : The values without tolerance are typical. 2 - (0.1) Vd1 4 MC 5 Vg2 6 RF OUT (Po) & Vd2 7 GND 8 GND Case:GND 2 - 2.06 MITSUBISHI ELECTRIC (15/20) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER Recommended Mount Pad 2.50 1.0 1.27 x 4=5.08 7.40 1.2 0.45 1.4 0.9 4.10 0.8 4.90 0.8 Unit:mm 2.16 2.14 Aug. '97 MITSUBISHI ELECTRIC (16/20) MITSUBISHI SEMICONDUCTOR Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER Recommended Temperature Profile 1) Infrared Reflow and Air Reflow Temperature Profile max. 10sec Temperature max. 240 deg.C 1~4 deg.C/sec 1~4 deg.C/sec 150 deg.C Approx. 60sec Time Notes 1) Temperature profile on package surface 2) Reflow process : Up to three times MITSUBISHI ELECTRIC (17/20) Aug. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER Lumped Elements Equivalent Circuit of Test Board for CDMA(1.85-1.91GHz) Vd2 Chip Inductor 10nH A 1.5pF Pin 1.0pF B l=2.0 w=1.0 MGF 7169C 4.0pF C l=2.0 w=2.2 F D Pout 15pF 1000pF Unit:mm SUB. data Er=4.8 H=600 um Metal T=43 um MITSUBISHI ELECTRIC (18/20) Oct. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER Lumped Elements Test Circuit Board for CDMA(1.85-1.91GHz) 5mm A B 1.0pF 1.5pF Pin 1000pF 1000pF C 4.0pF 15pF D Pout 10Ohm 1000pF 1000pF 1000pF 10nH F Vg1 Vd1 Vg2 Vd2 3K Ohm (This will be included in PKG for Mass Production) Line Chip Capacitor Chip Inductor This device needs 4 chip capacitors,1 chip inductor and 2 transmission lines to make input and output matching circuit. 40 x 60 mm SUB. data ER=4.8 H=600um Metal T=43um MITSUBISHI ELECTRIC (19/20) Oct. '97 MITSUBISHI SEMICONDUCTOR Preliminary information MGF7169C UHF BAND GaAs POWER AMPLIFIER VG1 VG2 Pin FET1 Matching circuits FET2 Pout VD1 VD2 ZI(ES) ZL(ES) Lumped Elements Equivalent circuit of MGF7169C with our test board : MGF7169C(Ceramic package) : our test board(Er=4.8, t=0.6mm) MITSUBISHI ELECTRIC (20/20) Oct. '97 |
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