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 MICROWAVE CORPORATION
v03.0404
HMC199MS8
DUAL SPDT SWITCH DC - 2.5 GHz
Features
Integrated Dual SPDTs Low Insertion Loss: <0.5 dB @ 2.0 GHz Positive Control: 0/+5V Ultra Small MSOP8 Package: 14.8 mm2
Typical Applications
The HMC199MS8 is ideal for: * Cellular * ISM Basestations * PCS
Functional Diagram
General Description
The HMC199MS8 is a low-cost dual SPDT GaAs "bypass" switch in an 8-lead MSOP package covering DC to 2.5 GHz. This four RF port component integrates two SPDT switches and a through line onto a single IC. The design provides low insertion loss of less than 0.5 dB while switching passive or active external circuit components in and out of the signal path. Port to port isolations are typically 25 to 30 dB. On-chip circuitry enables positive voltage control operation at very low DC currents with control inputs compatible with CMOS and most TTL logic families. Applications include LNA or filter bypass switching and single bit attenuator switching.
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SWITCHES - SMT
Electrical Specifications, TA = +25 C, Vctl = 0/+5 Vdc, 50 Ohm System
Parameter Frequency DC - 1.0 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 2.0 GHz DC - 2.5 GHz DC - 2.0 GHz DC - 2.5 GHz 0.5 - 2.0 GHz 0.5 - 2.0 GHz DC - 2.5 GHz 20 40 ns ns 22 17 17 12 19 32 Min. Typ. 0.3 0.5 0.7 25 21 20 15 23 36 Max. 0.6 0.8 1.0 Units dB dB dB dB dB dB dB dBm dBm
Insertion Loss
Isolation
Return Loss (On State, Any Port) Input Power for 1 dB Compression Input Third Order Intercept (Two-tone Input Power = 0 dBm Each Tone) Switching Characteristics tRISE, tFALL (10/90% RF) tON, tOFF (50% CTL to 10/90% RF)
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v03.0404
HMC199MS8
DUAL SPDT SWITCH DC - 2.5 GHz
GaAs MMIC Insertion Loss
0 -0.5
SUB-HARMONICALLY Isolation MIXER 17 - 25 GHz PUMPED
0 -10
INSERTION LOSS (dB)
-1.5 -2 -2.5 -3 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz)
ISOLATION (dB)
-1
-20 -30 -40 -50 -60 0 0.5 1 1.5 2 2.5 3 FREQUENCY (GHz)
RFC1 to RFC2 RFC1 to RF1 RFC2 to RF2
+25 C +85 C -40 C
Return Loss
0 -5
RFC1 RFC2 RF1 RF2
Note: Isolation between RF1 - RF2 (when RFC1 RFC2 is in insertion loss state) is 25 dB @ 1 GHz and 17 dB @ 2 GHz.
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SWITCHES - SMT
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RETURN LOSS (dB)
-10 -15 -20 -25 -30 -35 -40 0 0.5
1
1.5
2
2.5
3
FREQUENCY (GHz)
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v03.0404
HMC199MS8
DUAL SPDT SWITCH DC - 2.5 GHz
Compression vs. Frequency
Carrier at 900MHz CTL Input (Vdc) +5 Input Power for 0.1 dB Compression (dBm) 20 Input Power for 1.0 dB Compression (dBm) 23.5 Carrier at 1900MHz Input Power for 0.1 dB Compression (dBm) 19 Input Power for 1.0 dB Compression (dBm) 22
Distortion vs Frequency
Control Input (Vdc) +5 Input Third Order Intercept (dBm) 0 dBm Each Tone 900 MHz 34.5 1900 MHz 37.5
Caution: Do not operate continuously at RF power input greater than 1 dB compression and do not "hot switch" power levels greater than +13 dBm (Control = 0/+5Vdc).
Truth Table
*Control Input Tolerances are +/- 0.5 Vdc
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SWITCHES - SMT
Control Input*
Control Current (Typical) Ia (uA) -65 65 Ib (uA) 65 -65 RFC1 to RFC2 ON OFF
Signal Path RFC1 to RF1 OFF ON RFC2 to RF2 OFF ON
A (Vdc) 0 +5
B (Vdc) +5 0
DC blocking capacitors are required at ports RFC1, RFC2, RF1, RF2. Choose value for lowest frequency of operation.
14 - 62
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v03.0404
HMC199MS8
DUAL SPDT SWITCH DC - 2.5 GHz
Absolute Maximum Ratings
RF Input Power VCTL = 0/+5V Control Voltage Range (A & B) Channel Temperature Thermal Resistance Storage Temperature Operating Temperature +24 dBm -0.5 to +7.5 Vdc 150 C 172 C/W -65 to +150 C -40 to +85 C
Outline Drawing
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SWITCHES - SMT
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NOTES: 1. PACKAGE BODY MATERIAL: LOW STRESS INJECTION MOLDED PLASTIC SILICA AND SILICON IMPREGNATED. 2. LEADFRAME MATERIAL: COPPER ALLOY 3. LEADFRAME PLATING: Sn/Pb SOLDER 4. DIMENSIONS ARE IN INCHES [MILLIMETERS]. 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v03.0404
HMC199MS8
DUAL SPDT SWITCH DC - 2.5 GHz
Eval Board Layout (Top View)
*R1 & R2 = 100 Ohm. These optional resistors will provide more RF path to control circuit isolation.
14
SWITCHES - SMT
The circuit board used in the final application should be generated with proper RF circuit design techniques. Signal lines at the RF ports should have 50 ohm impedance. The evaluation circuit board shown above is available from Hittite Microwave Corporation upon request.
List of Material
Item J1 - J4 J5 - J8 C1 - C4 R1 - R2 U1 PCB* Description PC Mount SMA RF Connector DC Pin Chip Capacitor, 0402 Pkg. Choose value for lowest frequency of operation. 330 pF is provided on PCB. 100 Ohm Resistor, 0402 Pkg. HMC199MS8 Bypass Switch 103234 Evaluation PCB 1.5" x 1.5"
* Circuit Board Material: Rogers 4350
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For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
MICROWAVE CORPORATION
v03.0404
HMC199MS8
DUAL SPDT SWITCH DC - 2.5 GHz
Typical Application Circuit
14
Notes: 1. Set A/B control to 0/+5V, Vdd = +5V and use HCT series logic to provide a TTL driver interface. 2. Control inputs A/B can be driven directly with CMOS logic (HC) with Vdd = 5 to 7 Volts applied to the CMOS logic gates. 3. DC Blocking capacitors are required for each RF port as shown. Capacitor value determines lowest frequency of operation. 4. Highest RF signal power capability is achieved with Vdd = +7V and A/B set to 0/+7V.
For price, delivery, and to place orders, please contact Hittite Microwave Corporation: 12 Elizabeth Drive, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order Online at www.hittite.com
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SWITCHES - SMT


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