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| Rev 3: Nov 2004 AO3418, AO3418L ( Green Product ) N-Channel Enhancement Mode Field Effect Transistor General Description The AO3418 uses advanced trench technology to provide excellent RDS(ON), very low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch or in PWM applications. AO3418L ( Green Product ) is offered in a lead-free package. Features VDS (V) = 30V ID = 3.8 A RDS(ON) < 60m (VGS = 10V) RDS(ON) < 70m (VGS = 4.5V) RDS(ON) < 155m (VGS = 2.5V) TO-236 (SOT-23) Top View G D S G D S Absolute Maximum Ratings TA=25C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current A Pulsed Drain Current Power Dissipation A B Maximum 30 12 3.8 3.1 15 1.4 0.9 -55 to 150 Units V V A TA=25C TA=70C TA=25C TA=70C ID IDM PD TJ, TSTG W C Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C Symbol t 10s Steady-State Steady-State RJA RJL Typ 70 100 63 Max 90 125 80 Units C/W C/W C/W Alpha & Omega Semiconductor, Ltd. AO3418, AO3418L Electrical Characteristics (TJ=25C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON) RDS(ON) Zero Gate Voltage Drain Current Gate-Body leakage current Gate Threshold Voltage On state drain current Conditions ID=250A, VGS=0V VDS=24V, VGS=0V TJ=55C VDS=0V, VGS=12V VDS=VGS ID=250A VGS=4.5V, VDS=5V VGS=10V, ID=3.8A Static Drain-Source On-Resistance TJ=125C VGS=4.5V, ID=3.5A VGS=2.5V, ID=1A VDS=5V, ID=3.8A 1 15 43 64 52 101 11.7 0.81 60 85 70 155 1 2.5 270 1.4 Min 30 0.001 1 5 100 1.8 Typ Max Units V A nA V A m m m S V A pF pF pF nC nC nC ns ns ns ns ns nC gFS VSD IS Forward Transconductance Diode Forward Voltage IS=1A,VGS=0V Maximum Body-Diode Continuous Current DYNAMIC PARAMETERS Ciss Input Capacitance Coss Crss Rg Output Capacitance Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz 226 39 29 1.4 3 1.4 0.55 2.6 3.2 14.5 2.1 10.2 3.8 1.7 3.6 SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd Gate Drain Charge tD(on) tr tD(off) tf trr Qrr Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time VGS=4.5V, VDS=15V, ID=3.8A VGS=10V, VDS=15V, RL=3.9, RGEN=6 IF=3.8A, dI/dt=100A/s Body Diode Reverse Recovery Charge IF=3.8A, dI/dt=100A/s 4 5 22 3 13 5 A: The value of R JA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25C. The value in any a given application depends on the user's specific board design. The current rating is based on the t 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R JA is the sum of the thermal impedence from junction to lead RJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 s pulses, duty cycle 0.5% max. 2 E. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with TA=25C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Alpha & Omega Semiconductor, Ltd. AO3418, AO3418L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10V 12 3.5V 4V 6V 3V 6 ID(A) 10 VDS=5V 8 9 ID (A) 6 VGS=2.5V 3 4 125C 2 25C 0 0 2 3 4 VDS (Volts) Fig 1: On-Region Characteristics 1 5 0 0 0.5 1.5 2 2.5 3 VGS(Volts) Figure 2: Transfer Characteristics 1 3.5 200 175 150 RDS(ON) (m) 125 100 75 50 25 0 0 2 4 6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 100 ID=3.8A 90 80 RDS(ON) (m) 70 60 50 40 30 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage 25C 125C VGS=10V VGS=4.5V VGS=2.5V 1.8 VGS=4.5V Normalized On-Resistance 1.6 1.4 1.2 1 ID=3.5A 270 1.7 3.6 VGS=10V ID=3.8A VGS=2.5V ID=1A 0.8 0 25 50 75 100 125 150 13 175 Temperature (C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01 1.0E+00 1.0E-01 IS (A) 1.0E-02 1.0E-03 1.0E-04 1.0E-05 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics 125C 25C Alpha & Omega Semiconductor, Ltd. AO3418, AO3418L TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5 400 VDS=15V ID=3.8A Capacitance (pF) 350 300 250 200 150 100 50 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 TJ(Max)=150C TA=25C 0 0 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics 5 10 30 Coss Crss Ciss 4 VGS (Volts) 3 2 1 270 20 TJ(Max)=150C TA=25C 1.7 3.6 10.0 ID (Amps) 1ms 0.1s 10ms Power (W) RDS(ON) limited 10s 100s 15 10 1.0 1s 10s DC 0.1 0.1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E) 1 100 5 0 0.001 13 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E) 10 ZJA Normalized Transient Thermal Resistance D=Ton/T TJ,PK=TA+PDM.ZJA.RJA RJA=90C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1 0.1 PD Ton Single Pulse T 0.01 0.00001 0.0001 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance 0.001 0.01 100 1000 Alpha & Omega Semiconductor, Ltd. |
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