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| TC0205AD New Product Vishay Siliconix Dual N- and P-Channel "20-V Low-Threshold MOSFET PRODUCT SUMMARY Channel N-Channel VDS (V) 20 rDS(on) (W) 2.0 @ VGS = 4.5 V 2.5 @ VGS = 2.5 V ID (mA) 250 150 -180 -100 P-Channel -20 3.8 @ VGS = -4.5 V 5.0 @ VGS = -2.5 V FEATURES D D D D D Very Small Outline (SC-70, 6-Leads) Low On-Resistance: 2.0 W (N-Ch) Low Threshold: 0.9 V (typ) Fast Switching Speed: 35 ns 2.5-V or Lower Operation BENEFITS D D D D D Ease in Driving Switches Low Offset (Error) Voltage Low-Voltage Operation High-Speed Circuits Low Battery Voltage Operation APPLICATIONS D Replace Digital Transistors, Level-Shifter D Battery Operated Systems D Power Supply Converter Circuits D Load/Power Switching-Cell Phones, PDA SOT-363 SC-70 (6-Leads) S1 G1 D2 1 2 3 6 5 4 D1 G2 S2 Order Number: TC0205AD ABSOLUTE MAXIMUM RATINGS (TA = 25_C UNLESS OTHERWISE NOTED) Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (TJ = 150_C)a 150 C) Pulsed Drain Current Maximum Power Dissi ationa Dissipation Operating Junction and Storage Temperature Range TA = 25_C TA = 70_C TA = 25_C TA = 70_C Symbol VDS VGS ID IDM PD TJ, Tstg N-Channel 20 "8 250 200 500 P-Channel -20 "8 -180 -140 -500 Unit V mA 0.20 (Total) W 0.13 (Total) -55 to 150 _C THERMAL RESISTANCE RATINGS Parameter Maximum Junction-to-Ambienta Notes a. Surface Mounted on FR4 Board, t v 10 sec. Document Number: 70882 S-58611--Rev. A, 19-Jul-99 www.siliconix.com S FaxBack 408-970-5600 Symbol RthJA Limit 625 (Total) Unit _C/W 1 TC0205AD Vishay Siliconix New Product SPECIFICATIONS (TJ = 25_C UNLESS OTHERWISE NOTED) Parameter Static Drain-Source Breakdown Voltage V(BR)DSS VGS(th) IGSS VGS = 0 V, ID = 10 mA VGS = 0 V, ID = -10 mA VDS = VGS, ID = 50 mA VDS = VGS, ID = -50 mA VDS = 0 V VGS = "8 V V, VDS = 20 V, VGS = 0 V Zero Gate Voltage Drain Current IDSS VDS = -20 V, VGS = 0 V VDS = 20 V, VGS = 0 V, TJ = 55_C VDS = -20 V, VGS = 0 V, TJ = 55_C VDS w 2.5 V, VGS = 5.0 V On-State Drain Currentb ID(on) VDS w -2.5 V, VGS = -5.0 V VDS w 4.5 V, VGS = 8.0 V VDS w -4.5 V, VGS = -8.0 V VGS = 2.5 V, ID = 150 mA Drain-Source On-State Resistanceb rDS(on) VGS = -2.5 V, ID = -75 mA VGS = 4.5 V, ID = 250 mA VGS = -4.5 V, ID = -180 mA Forward Transconductanceb Diode Forward Voltageb gfs VSD VDS = 2.5 V, ID = 50 mA VDS = -2.5 V, ID = - 50 mA IS = 50 mA, VGS = 0 V IS = -50 mA, VGS = 0 V N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 120 -120 400 -400 1.6 4 1.2 2.6 150 200 0.7 -0.7 1.2 -1.2 2.5 5 2.0 3.8 mS W mA 20 -20 0.4 -0.4 24 -24 0.9 -0.9 "2 "2 0.001 -0.001 1.5 -1.5 "100 "100 100 -100 1 -1 mA nA V Symbol Test Condition Min Typ Max Unit Gate Threshold Voltage Gate-Body Leakage V Dynamica Total Gate Charge Qg Qgs Qgd Ciss Coss Crss N-Channel VDS = 5 V, VGS = 0 V P-Channel VDS = -5 V VGS = 0 V 5 V, Reverse Transfer Ca acitance Capacitance N-Channel VDS = 5 V, VGS = 4.5 V, ID = 100 mA P-Channel VDS = -5 V, VGS = -4.5 V ID = -100 mA 5V 4 5 V, 100 A Gate-Drain Charge N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 300 300 25 25 100 100 15 15 11 11 5 5 pF F 450 450 pC C Gate-Source Charge In ut Capacitance Input Ca acitance Out ut Ca acitance Output Capacitance Switching Turn-On Time td(on) tr td(off) tf N-Channel N Channel VDD = 3 V, RL = 100 W , ID = 0.25 A, VGEN = 4.5 V, RG = 10 W P-Channel VDD = -3 V RL = 100 W 3 V, ID = -0.25 A, VGEN = -4.5 V, RG = 10 W 0.25 4.5 N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch N-Ch P-Ch 7 7 25 25 19 19 9 9 12 12 35 35 30 30 15 15 ns Rise Time Turn-Off Delay Time Fall Time Notes a. Guaranteed by design, not subject to production testing. b. Pulse test; pulse width v 300 ms, duty cycle v 2%. www.siliconix.com S FaxBack 408-970-5600 Document Number: 70882 S-58611--Rev. A, 19-Jul-99 2 TC0205AD New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.25 VGS = 3.5 thru 5 V 1.00 I D - Drain Current (A) I D - Drain Current (A) 0.6 25_C 3V 0.75 2.5 V 0.50 2V 0.25 1.5 V 0 0 1 2 3 4 1V 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0.8 TC = -55_C Vishay Siliconix N CHANNEL Transfer Characteristics 0.4 125_C 0.2 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 7 6 r DS(on) - On-Resistance ( W ) 40 5 4 3 VGS = 2.5 V 2 1 0 0 1 2 ID - Drain Current (A) 3 4 VGS = 4.5 V 0 0 4 C - Capacitance (pF) 50 Capacitance 30 20 Coss 10 Crss Ciss 8 12 16 20 VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 100 mA Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 100 m A 6 r DS(on) - On-Resistance (W) (Normalized) 300 400 500 600 8 1.4 1.2 4 1.0 2 0.8 0 0 100 200 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (pC) TJ - Junction Temperature (_C) Document Number: 70882 S-58611--Rev. A, 19-Jul-99 www.siliconix.com S FaxBack 408-970-5600 3 TC0205AD Vishay Siliconix New Product N CHANNEL On-Resistance vs. Gate-to-Source Voltage 8 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 3 1 I S - Source Current (A) TJ = 125_C r DS(on) - On-Resistance ( W ) 6 0.1 ID = 250 mA 4 TJ = 25_C 0.01 TJ = -55_C 2 0.001 0.00 0.3 0.6 0.9 1.2 0 0 2 4 6 8 10 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.2 ID = 50 mA 0.1 V GS(th) Variance (V) -0.0 -0.1 -0.2 -0.3 -0.4 -50 -25 0 25 50 75 100 125 150 TJ - Temperature (_C) www.siliconix.com S FaxBack 408-970-5600 4 Document Number: 70882 S-58611--Rev. A, 19-Jul-99 TC0205AD New Product TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Output Characteristics 1.2 5V 0.4 4.5 V I D - Drain Current (A) 0.8 4V 3.5 V 3V 2.5 V 2V 0 0 1 2 3 4 0 0 0.5 1.0 1.5 2.0 2.5 3.0 I D - Drain Current (A) 25_C 0.3 125_C 0.2 0.5 TC = -55_C Vishay Siliconix P CHANNEL Transfer Characteristics 1.0 0.6 0.4 0.2 0.1 VDS - Drain-to-Source Voltage (V) VGS - Gate-to-Source Voltage (V) On-Resistance vs. Drain Current 8 45 Capacitance r DS(on) - On-Resistance ( W ) 36 C - Capacitance (pF) 6 VGS = 2.5 V 4 VGS = 4.5 V 2 27 Ciss 18 Coss 9 Crss 0 0 0.5 1.0 1.5 2.0 2.5 3.0 0 0 3 6 9 12 ID - Drain Current (A) VDS - Drain-to-Source Voltage (V) 10 V GS - Gate-to-Source Voltage (V) VDS = 6 V ID = 80 mA Gate Charge 1.6 On-Resistance vs. Junction Temperature VGS = 4.5 V ID = 180 m A 6 r DS(on) - On-Resistance (W) (Normalized) 200 300 400 500 600 8 1.4 1.2 4 1.0 2 0.8 0 0 100 0.6 -50 -25 0 25 50 75 100 125 150 Qg - Total Gate Charge (pC) TJ - Junction Temperature (_C) Document Number: 70882 S-58611--Rev. A, 19-Jul-99 www.siliconix.com S FaxBack 408-970-5600 5 TC0205AD Vishay Siliconix New Product P CHANNEL On-Resistance vs. Gate-to-Source Voltage 6 TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) Source-Drain Diode Forward Voltage 1 TJ = 150_C r DS(on) - On-Resistance ( W ) I S - Source Current (A) 5 0.1 4 ID = 180 mA 3 0.01 TJ = 25_C 2 1 0.001 0.00 0.5 01 1.5 0 1 1.5 2.0 2.5 3.0 3.5 4.0 4.5 VSD - Source-to-Drain Voltage (V) VGS - Gate-to-Source Voltage (V) Threshold Voltage 0.3 ID = 50 mA 0.2 V GS(th) Variance (V) 0.1 0.0 -0.1 -0.2 -50 -25 0 25 50 75 100 125 150 TJ - Temperature (_C) www.siliconix.com S FaxBack 408-970-5600 6 Document Number: 70882 S-58611--Rev. A, 19-Jul-99 |
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