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| HiPerFETTM Power MOSFETs Q-Class N-Channel Enhancement Mode Avalanche Rated, Low Qg, High dv/dt VDSS IXFK/IXFX 30N50Q IXFK/IXFX 32N50Q ID25 RDS(on) 500 V 30 A 0.16 W 500 V 32 A 0.15 W trr 250 ns Symbol VDSS VDGR VGS VGSM I D25 IDM Test Conditions TJ = 25C to 150C TJ = 25C to 150C; RGS = 1 MW Continuous Transient TC = 25C TC = 25C, pulse width limited by TJM 30N50Q 32N50Q 30N50Q 32N50Q Maximum Ratings 500 500 20 30 30 32 120 128 32 45 1500 5 416 -55 ... + 150 150 -55 ... + 150 V V V V A A A A A mJ mJ V/ns W C C C C Nm/lb.in. g g PLUS 247TM (IXFK) G (TAB) D TO-264 AA (IXFK) I AR EAR EAS dv/dt PD TJ TJM Tstg TL Md Weight TC = 25C TC = 25C I S IDM, di/dt 100 A/ms, VDD VDSS, TJ 150C, RG = 2 W TC = 25C G D S (TAB) G = Gate S = Source D = Drain TAB = Drain 1.6 mm (0.063 in) from case for 10 s Mounting torque TO-247 TO-268 300 1.13/10 6 4 Features l l l l Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 500 2.0 4.0 100 TJ = 25C TJ = 125C 32N50Q 30N50Q 100 1 0.15 0.16 V V nA mA mA W W l l VDSS VGS(th) I GSS I DSS RDS(on) VGS = 0 V, ID = 250 uA VDS = VGS, ID = 4 mA VGS = 20 VDC, VDS = 0 VDS = VDSS VGS = 0 V VGS = 10 V, ID = 0.5 ID25 Note 1 IXYS advanced low Qg process Low gate charge and capacitances - easier to drive - faster switching International standard packages Low RDS (on) Unclamped Inductive Switching (UIS) rated Molding epoxies meet UL 94 V-0 flammability classification Advantages l l l PLUS 247TM package for clip or spring mounting Space savings High power density (c) 2000 IXYS All rights reserved 98604B (8/00) IXFK 30N50Q IXFX 30N50Q Symbol Test Conditions Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. Note 1 18 28 3950 VGS = 0 V, VDS = 25 V, f = 1 MHz 640 210 35 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 RG = 2 W (External), 42 75 20 150 VGS = 10 V, VDS = 0.5 * VDSS, ID = 0.5 * ID25 26 85 0.3 0.15 S pF pF pF ns ns ns ns nC nC nC K/W K/W A A1 A2 b b1 b2 C D E e L L1 Q R Dim. Terminals: IXFK 32N50Q IXFX 32N50Q PLUS 247TM Outline gfs Ciss Coss Crss td(on) tr td(off) tf Qg(on) Qgs Qgd RthJC RthCK VDS = 10 V; ID = 0.5 * ID25 1 - Gate 2 - Drain (Collector) 3 - Source (Emitter) 4 - Drain (Collector) Source-Drain Diode Symbol IS ISM VSD t rr QRM IRM Test Conditions VGS = 0 V Repetitive; pulse width limited by TJM IF = IS, VGS = 0 V, Note 1 Characteristic Values (TJ = 25C, unless otherwise specified) min. typ. max. 32 128 1.5 250 A A V ns mC A Millimeter Min. Max. 4.83 5.21 2.29 2.54 1.91 2.16 1.14 1.40 1.91 2.13 2.92 3.12 0.61 0.80 20.80 21.34 15.75 16.13 5.45 BSC 19.81 20.32 3.81 4.32 5.59 6.20 4.32 4.83 Inches Min. Max. .190 .205 .090 .100 .075 .085 .045 .055 .075 .084 .115 .123 .024 .031 .819 .840 .620 .635 .215 BSC .780 .800 .150 .170 .220 0.244 .170 .190 TO-264 AA Outline IF = IS, -di/dt = 100 A/ms, VR = 100 V 0.75 7.5 Dim. Note: 1. Pulse test, t 300 ms, duty cycle d 2 % Millimeter Min. Max. 4.82 5.13 2.54 2.89 2.00 2.10 1.12 1.42 2.39 2.69 2.90 3.09 0.53 0.83 25.91 26.16 19.81 19.96 5.46 BSC 0.00 0.25 0.00 0.25 20.32 20.83 2.29 2.59 3.17 3.66 6.07 6.27 8.38 8.69 3.81 4.32 1.78 2.29 6.04 6.30 1.57 1.83 Min. Inches Max. A A1 A2 b b1 b2 c D E e J K L L1 P Q Q1 R R1 S T .190 .202 .100 .114 .079 .083 .044 .056 .094 .106 .114 .122 .021 .033 1.020 1.030 .780 .786 .215 BSC .000 .010 .000 .010 .800 .820 .090 .102 .125 .144 .239 .247 .330 .342 .150 .170 .070 .090 .238 .248 .062 .072 IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 IXFK 30N50Q IXFX 30N50Q Figure 1. Output Characteristics at 25OC , $PSHUHV U 2A!$ 8 EA P IXFK 32N50Q IXFX 32N50Q Figure 2. Output Characteristics at 125OC W BT 2 W AAAAAAAAAA(WAA AAAAAAAAAA'W AAAAAAAAAA&WA %W ' $W 9'6 9ROWV , $PSHUHV ' Figure 3. RDS(on) normalized to 15A/25OC vs. ID W BTAA Figure 4. RDS(on) normalized to 15A/25OC vs. TJ 2A W 1RUPDOL]HG Uw2 !$ A 8 5 Figure 5. Drain Current vs. Case Temperature 5 1 2 6 ' Uw2!$ A 8 1RUPDOL]HG 1 2 6 ' Figure 6. Admittance Curves (c) 2000 IXYS All rights reserved IXFK 30N50Q IXFX 30N50Q Figure 7. Gate Charge Wq2"W AAAD 2 %6 IXFK 32N50Q IXFX 32N50Q Figure 8. Capacitance Curves AAAD 2 ' * 6 y W A A W 6 * A A A r p h v p h h 8 BhrA8uhtrAA8 Figure 9. Forward Voltage Drop of the Intrinsic Diode W *62AW r r 6 A A D U2 - !$ 8 2 ' U 2!$ 8 2 Figure 10. Transient Thermal Resistance IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 |
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