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| DG271B Vishay Siliconix High-Speed Quad Monolithic SPST CMOS Analog Switch D D D D D FEATURES Fast Switching tON: 55 ns Low Charge Injection: 5 pC Low rDS(on): 32 W TTL/CMOS Compatible Low Leakage: 50 pA D Fast Settling Times D Reduced Switching Glitches D High Precision BENEFITS D D D D D D D D APPLICATIONS High-Speed Switching Sample/Hold Digital Filters Op Amp Gain Switching Flight Control Systems Automatic Test Equipment Choppers Communication Systems DESCRIPTION The DG271B high speed quad single-pole single-throw analog switch is intended for applications that require low on-resistance, low leakage currents, and fast switching speeds. Built on the Vishay Siliconix' proprietary high voltage silicon gate process to achieve superior on/off performance, each switch conducts equally well in both directions when on, and blocks up to the supply voltage when off. An epitaxial layer prevents latchup. The DG271B has a redesign internal regulator which improves start-up over the DG271. As a committed partner to the community and the environment, Vishay Siliconix manufactures this product with the lead (Pb)-free device terminations. For analog switching products manufactured with 100% matte tin device terminations, the lead (Pb)-free "--E3" suffix is being used as a designator. FUNCTIONAL BLOCK DIAGRAM AND PIN CONFIGURATION Dual-In-Line and SOIC IN1 D1 S1 V- GND S4 D4 IN4 1 2 3 4 5 6 7 8 Top View 16 15 14 13 12 11 10 9 IN2 D2 S2 V+ NC S3 D3 IN3 0 1 Logic "0" v 0.8 V 08 2.4 Logic "1" w 2 4 V TRUTH TABLE Logic Switch ON OFF ORDERING INFORMATION Temp Range 0 to 70_C -40 to 85_C 40 Package 16-Pin Plastic DIP 16-Pin 16 Pin Narrow SOIC Part Number DG271BCJ--E3 DG271BDY--E3 DG271BDY-T1--E3 (with Tape and Reel) www.vishay.com Document Number: 70966 S-42137--Rev. B, 15-Nov-04 1 DG271B Vishay Siliconix ABSOLUTE MAXIMUM RATINGS V+ to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 44 V GND to V- . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 25 V Digital Inputsa VS, VD . . . . . . . . . . . . . . . . . . . . . . . . . (V-) -2 V to (V+) +2 V or 20 mA, whichever occurs first Current, Any Terminal . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 30 mA Peak Current, S or D (Pulsed at 1 ms, 10% duty cycle max) . . . . . . . . . . . . . . . . . . . . . . . . . . 100 mA Storage Temperature (DY Suffix) . . . . . . . . . . . . . . . . . . . -65 to 150_C (CJ Suffix) . . . . . . . . . . . . . . . . . . . -65 to 125_C Power Dissipation (Package)b 16-Pin Plastic DIPc . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 470 mW 16-Pin Plastic Narrow SOICd . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 600 mW Notes: a. Signals on SX, DX, or INX exceeding V+ or V- will be clamped by internal diodes. Limit forward diode current to maximum current ratings. b. All leads welded or soldered to PC Board. c. Derate 6.5 mW/_C above 75_C d. Derate 7.6 mW/_C above 75_C Stresses beyond those listed under "Absolute Maximum Ratings" may cause permanent damage to the device. These are stress ratings only, and functional operation of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum rating conditions for extended periods may affect device reliability. SPECIFICATIONSa Test Conditions Unless Specified Parameter Analog Switch Analog Signal Rangee Drain-Source On-Resistance VANALOG rDS(on) IS(off) Switch Off Leakage Current ID(off) Channel On Leakage Current ID(on) + IS(on) VD = "14 V VS = #14 V V, IS = 1 mA, VD = "10 V Full Room Full Room Full Room Full Room Full -1 -20 -1 -20 -1 -20 -15 32 "0.05 "0.05 "0.05 15 50 75 1 20 1 20 1 20 nA V W C, D Suffix 0 to 70_C -40 to 85_C Symbol V+ V = 15 V, V- = -15 V VV 15 VIN = 2.4 V, 0.8 Vf Tempb Mind Typc Maxd Unit VS = VD = "14 V Digital Control Input Current with Voltage High Input Current with Voltage Low IINH IINL VIN = 2 V VIN = 15 V VIN = 0 V Full Full Full -1 -1 -1 0.010 0.010 0.010 1 1 1 m mA Dynamic Characteristics Turn-On Time Turn-Off Time Charge Injection Source Off Capacitance Drain Off Capacitance Channel On Capacitance Off Isolation Crosstalk tON tOFF Q CS(off) CD(off) CD(on) OIRR XTALK VS = "10 V See Figure 3 CL = 1 nF, VS = 0 V Vgen = 0 V, Rgen = 0 W See Figure 3 VS = 0 V, VIN = 5 V f = 1 MHz VD = VS = 0 V, VIN = 0 V CL = 10 pF, RL = 1 kW f = 100 kHz See Figures 4 and 5 Room Full Room Full Room Room Room Room Room Room 55 50 65 80 65 80 ns -5 8 8 30 85 100 pC p pF dB Supply Positive Supply Current Negative Supply Current I+ I- All Channels On or Off VIN = 5 V or 0 V Room Full Room Full -6 -8 5.5 -3.4 7.5 9 mA Notes: a. Refer to PROCESS OPTION FLOWCHART. b. Room = 25_C, Full = as determined by the operating temperature suffix. c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. d. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum, is used in this data sheet. e. Guaranteed by design, not subject to production test. f. VIN = input voltage to perform proper function. www.vishay.com Document Number: 70966 S-42137--Rev. B, 15-Nov-04 2 DG271B Vishay Siliconix TYPICAL CHARACTERISTICS (25_C UNLESS NOTED) 70 rDS(on) - Drain-Source On-Resistance (W) 60 50 40 "10 V 30 20 "20 V 10 0 -20 -16 -12 -8 -4 0 4 8 12 16 20 VD - Drain Voltage (V) "15 V rDS(on) vs. VD and Power Supply Voltages rDS(on) - Drain-Source On-Resistance (W) 50 rDS(on) vs. VD and Temperature V+ = 15 V V- = -15 V 40 125_C 30 85_C 25_C 20 0_C 10 -55_C "5 V 0 -15 -10 -5 0 5 10 15 VD - Drain Voltage (V) Input Switching Threshold vs. Supply Voltage 2.5 10 nA Leakage Currents vs. Temperature ID(on) 2 1 nA V IN ( V ) Leakage 1.5 1 IS(off), ID(off) 100 pA 0.5 0 "4 "6 "8 "10 "12 "14 "16 "18 "20 Positive/Negative Supplies (V) 10 pA -55 -35 -15 5 25 45 65 85 105 125 Temperature (_C) Switching Times vs. Temperature 55 V+ = 15 V V- = -15 V 50 Switching Time (ns) Switching Time (ns) tON Switching Time vs. Power Supply Voltage 55 50 45 45 tON 40 tOFF 40 35 35 tOFF 30 -55 30 -25 0 25 50 75 100 125 "4 "6 "8 "10 "12 "14 "16 "18 "20 Temperature (_C) Supply Voltage (V) Document Number: 70966 S-42137--Rev. B, 15-Nov-04 www.vishay.com 3 DG271B Vishay Siliconix SCHEMATIC DIAGRAM (TYPICAL CHANNEL) V+ 5V Reg Level Shift/ Drive INX V- V+ SX DX GND V- FIGURE 1. TEST CIRCUITS +15 V Logic Input Switch Input 5V 50% 0V VS tOFF VO 90% tr <20 ns tf <20 ns V+ 10 V S IN 5V GND V- RL 1 kW CL 35 pF D VO Switch Output VO tON CL (includes fixture and stray capacitance) -15 V VO = VS RL RL + rDS(on) FIGURE 2. Switching Time Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see http://www.vishay.com/ppg?70966. www.vishay.com Document Number: 70966 S-42137--Rev. B, 15-Nov-04 4 |
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