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| PROFET(R) BTS 308 Smart Highside Power Switch Features * Overload protection * Current limitation * Short circuit protection * Thermal shutdown * Overvoltage protection (including load dump) * Fast demagnetization of inductive loads * Reverse battery protection1) * Undervoltage and overvoltage shutdown with auto-restart and hysteresis * Open drain diagnostic output * Open load detection in OFF-state * CMOS compatible input * Loss of ground and loss of Vbb protection * Electrostatic discharge (ESD) protection Product Summary Overvoltage protection Operating voltage On-state resistance Load current (ISO) Vbb(AZ) Vbb(on) RON IL(ISO) 60 V 4.7 ... 34 V 300 m 1.3 A TO-220AB/5 5 1 Straight leads 5 5 1 Standard SMD Application * C compatible power switch with diagnostic feedback for 12 V and 24 V DC grounded loads * Most suitable for inductive loads * Replaces electromechanical relays, fuses and discrete circuits * Fast switching * Not suitable for lamp loads General Description N channel vertical power FET with charge pump, ground referenced CMOS compatible input and diagnostic feedback, monolithically integrated in Smart SIPMOS(R) technology. Fully protected by embedded protection functions. + V bb 3 Voltage source Overvoltage protection Current limit Gate protection V Logic Voltage sensor Charge pump Level shifter Rectifier Open load ESD Logic detection Limit for unclamped ind. loads OUT 2 IN Temperature sensor 5 Load 4 ST Short circuit detection GND (R) PROFET Load GND 1 Signal GND 1) With external current limit (e.g. resistor RGND=150 ) in GND connection, resistor in series with ST connection, reverse load current limited by connected load. Semiconductor Group 1 12.96 BTS 308 Pin 1 2 3 4 5 Symbol GND IN Vbb ST OUT (Load, L) I + S O Function Logic ground Input, activates the power switch in case of logical high signal Positive power supply voltage, the tab is shorted to this pin Diagnostic feedback, low on failure Output to the load Maximum Ratings at Tj = 25 C unless otherwise specified Parameter Supply voltage (overvoltage protection see page 3) Load current (Short circuit current, see page 4) Operating temperature range Storage temperature range Power dissipation (DC), TC 25 C Electrostatic discharge capability (ESD) IN, ST: (Human Body Model) all other pins: Input voltage (DC) Current through input pin (DC) Current through status pin (DC) see internal circuit diagrams page 6 Symbol Vbb IL Tj Tstg Ptot VESD Values 60 self-limited -40 ...+150 -55 ...+150 50 1 tbd (>1) -10 ... +16 5.0 5.0 2.5 75 Unit V A C W kV V mA VIN IIN IST Thermal resistance chip - case: junction - ambient (free air): RthJC RthJA K/W Semiconductor Group 2 BTS 308 Electrical Characteristics Parameter and Conditions at Tj = 25 C, Vbb = 24 V unless otherwise specified Symbol Values min typ max Unit Load Switching Capabilities and Characteristics On-state resistance (pin 3 to 5) IL = 0.8 A, Vbb = 12V Tj=25 C: RON Tj=150 C: Nominal load current, ISO Norm (pin 3 to 5) VON = 0.5 V, TC = 85 C Output current (pin 5) while GND disconnected or GND pulled up, Vbb=30 V, VIN= 0, see diagram page 7 Turn-on time to 90% VOUT: Turn-off time to 10% VOUT: RL = 47 , Vbb = 12V, Tj =-40...+150C Slew rate on, 10 to 30% VOUT, RL = 47 , Vbb = 12V, Tj =-40...+150C Slew rate off, 10 to 30% VOUT, RL = 47 , Vbb = 12V, Tj =-40...+150C Operating Parameters Operating voltage2) Operating voltage slew rate Undervoltage shutdown -1.18 270 540 1.3 -- 300 600 -1 m IL(ISO) IL(GNDhigh) -- A mA s ton toff dV /dton -dV/dtoff --1 2 ----- 50 55 10 15 V/s V/s Tj =-40...+150C: Vbb(on) dVbb/dt Tj =25C: Vbb(under) Tj =-40...+150C: Tj =-40...+150C: Vbb(u rst) Undervoltage restart Vbb(ucp) Undervoltage restart of charge pump Tj =-40...+150C: see diagram page 11 Undervoltage hysteresis Vbb(under) Vbb(under) = Vbb(u rst) - Vbb(under) Tj =-40...+150C: Vbb(over) Overvoltage shutdown Tj =-40...+150C: Vbb(o rst) Overvoltage restart Tj =-40...+150C: Vbb(over) Overvoltage hysteresis 3) Tj =-40...+150C: Vbb(AZ) Overvoltage protection Ibb=10 mA Ibb(off) Standby current (pin 3), VIN=0 Tj=-40...+150C: 4), V =5 V Operating current (Pin 1) IGND IN 4.7 -1 2.9 2.7 ---34 34 -59 ----4.9 0.2 --0.5 70 34 +1 4.5 4.7 4.9 7.5 -46 ---- V V/s V V V V V V V V A --- 40 2 50 4 mA 2) 3) 4) At supply voltage increase up to Vbb= 4.9 V typ without charge pump, VOUT Vbb - 2 V Meassured without load. See also VON(CL) in table of protection functions and circuit diagram page 7. Add IST, if IST > 0, add IIN, if VIN>5.5 V Semiconductor Group 3 BTS 308 Parameter and Conditions at Tj = 25 C, Vbb = 24 V unless otherwise specified Symbol Values min typ max Unit Protection Functions Initial peak short circuit current limit (pin 3 to 5)5), IL(SCp) ( max 100 s if VON > VON(SC) ) Vbb = 12V Tj =-40C: Tj =25C: Tj =+150C: Short circuit shutdown delay after input pos. slope VON > VON(SC), Tj =-40..+150C: td(SC) min value valid only, if input "low" time exceeds 60 s 2.0 2.8 2.0 15 -5 --- 10 6.2 5 100 A s V V C K V Output clamp (inductive load switch off) at VOUT = Vbb - VON(CL) IL= 1 A, Tj =-40..+150C: Short circuit shutdown detection voltage (pin 3 to 5) Thermal overload trip temperature Thermal hysteresis Reverse battery (pin 3 to 1) 6) Diagnostic Characteristics Open load detection current (included in standby current Ibb(off)) VON(CL) VON(SC) Tjt Tjt -Vbb 59 -150 --- 67 3.5 -10 -- 75 ---32 Tj=-40...+150C: IL(off) Tj=-40..150C: VOUT(OL) 0 2 -3 30 4 A V Open load detection voltage 5) 6) Short circuit current limit for max. duration of td(SC) max=100 s, prior to shutdown Requires 150 resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load. Input and Status currents have to be limited (see max. ratings page 2 and circuit page 7). Semiconductor Group 4 BTS 308 Parameter and Conditions at Tj = 25 C, Vbb = 24 V unless otherwise specified Symbol Values min typ max Unit Input and Status Feedback7) Input resistance see circuit page 6 Input turn-on threshold voltage Tj =-40..+150C: Tj =-40..+150C: Input turn-off threshold voltage Input threshold hysteresis, Tj =-40..+150C Off state input current (pin 2), VIN = 0.4 V, Tj =-40..+150C On state input current (pin 2), VIN = 3.5 V, Tj =-40..+150C Delay time for status with open load after Input neg. slope (see diagram page 11) RI VIN(T+) VIN(T-) VIN(T) IIN(off) IIN(on) td(ST OL3) -1.5 0.8 0.2 8 10 50 15 4 ----22 -50 -2.4 --30 50 400 100 k V V V A A s s td(ST SC) Status invalid after positive input slope Tj=-40 ... +150C: (short circuit) Status output (open drain) Zener limit voltage Tj =-40...+150C, IST = +50 uA: VST(high) ST low voltage Tj =-40...+150C, IST = +1.6 mA: VST(low) 5.4 -- 6 -- -0.4 V 7) If a ground resistor RGND is used, add the voltage drop across this resistor. Semiconductor Group 5 BTS 308 Truth Table Inputlevel Normal operation Open load Short circuit to GND Short circuit to Vbb Overtemperature Undervoltage Overvoltage L = "Low" Level H = "High" Level L H L H L H L H L H L H L H Output level L H 8) Status BTS 308 H H L H H L L H L L H H H H H L L H H L L L L L L X = don't care Z = high impedance, potential depends on external circuit Status signal after the time delay shown in the diagrams (see fig 5. page 11) Terms Ibb I IN 2 I ST V V bb R IN VST 4 ST GND 1 GND IGND VOUT IN 3 Vbb IL PROFET OUT 5 VON Status output +5V R ST(ON) ST GND ESDZD ESD-Zener diode: 6 V typ., max 5 mA; RST(ON) < 250 at 1.6 mA, ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). Input circuit (ESD protection) R IN Short circuit detection I Fault Condition: VON > 3.5 V typ.; IN high + V bb ESD-ZD I GND I I V ON ESD zener diodes are not to be used as voltage clamp at DC conditions. Operation in this mode may result in a drift of the zener voltage (increase of up to 1 V). OUT Logic unit Short circuit detection 8) Power Transistor off, high impedance, internal pull up current source for open load detection. Semiconductor Group 6 BTS 308 Inductive and overvoltage output clamp + V bb V Z GND disconnect 3 VON 2 IN Vbb PROFET OUT OUT GND 5 PROFET V bb V IN V ST 4 ST GND 1 V GND VON clamped to 67 V typ. Any kind of load. In case of Input=high is VOUT VIN - VIN(T+) . Due to VGND >0, no VST = low signal available. Overvolt. and reverse batt. protection + Vbb V GND disconnect with GND pull up 3 IN Vbb PROFET OUT R IN IN RI Logic Z2 2 R ST ST V 5 Z1 PROFET GND 4 ST GND 1 R GND Signal GND V V bb V IN ST V GND VZ1 = 6.2 V typ., VZ2 = 70 V typ., RGND = 150 , RST= 15 k, RI= 4 k typ. Any kind of load. If VGND > VIN - VIN(T+) device stays off Due to VGND >0, no VST = low signal available. Open-load detection OFF-state diagnostic condition: VOUT > 3 V typ.; IN low Vbb disconnect with charged inductive load 3 high 2 IN Vbb PROFET OUT OFF I 5 4 L(OL) ST GND 1 Logic unit Open load detection V V OUT bb Signal GND Normal load current can be handled by the PROFET itself. Semiconductor Group 7 BTS 308 Vbb disconnect with charged external inductive load S high 2 IN 3 Vbb PROFET 4 ST GND 1 V OUT Inductive Load switch-off energy dissipation E bb E AS V bb PROFET OUT EL GND ZL ELoad IN 5 D = ST bb { L RL ER If other external inductive loads L are connected to the PROFET, additional elements like D are necessary. Energy stored in load inductance: EL = 1/2*L*I L While demagnetizing load inductance, the energy dissipated in PROFET is 2 EAS= Ebb + EL - ER= VON(CL)*iL(t) dt, with an approximate solution for RL > 0 : IL* L IL*RL *(V + |VOUT(CL)|)* ln (1+ ) |VOUT(CL)| 2*RL bb EAS= Semiconductor Group 8 BTS 308 Options Overview all versions: High-side switch, Input protection, ESD protection, load dump and reverse battery protection with 150 in GND connection, protection against loss of ground Type Logic version BTS 410D2 410E2 410G2 410H2 D X X X X E G H X 307 308 Overtemperature protection with hysteresis Tj >150 C, latch function9)10) Tj >150 C, with auto-restart on cooling Short circuit to GND protection switches off when VON>3.5 V typ. and Vbb> 8 V typ9) switches off when VON>3.5 V typ. switches off when VON>8.5 V (when first turned on after approx. 0 s) Achieved through overtemperature protection typ.9) X X X X X X X X Open load detection in OFF-state with sensing current -- A typ. in ON-state with sensing voltage drop across power transistor X X X X X X X -12) X X X X X X X X X -12) X - X X X X -12) X X X X X X X X X X X X X X X X X X X - Undervoltage shutdown with auto restart Overvoltage shutdown with auto restart11) Status feedback for overtemperature short circuit to GND short to Vbb open load undervoltage overvoltage Status output type CMOS Open drain X X X X X Output negative voltage transient limit (fast inductive load switch off) to Vbb - VON(CL) X X X X X X X X X X X X X Load current limit high level (can handle loads with high inrush currents) low level (better protection of application) X X X X Protection against loss of GND Latch except when Vbb -VOUT < VON(SC) after shutdown. In most cases VOUT = 0 V after shutdown (VOUT 0 V only if forced externally). So the device remains latched unless Vbb < VON(SC) (see page 4). No latch between turn on and td(SC). 10) With latch function. Reseted by a) Input low, b) Undervoltage 11) No auto restart after overvoltage in case of short circuit 12) Low resistance short V to output may be detected in ON-state by the no-load-detection bb 9) Semiconductor Group 9 BTS 308 Timing diagrams Figure 1a: Vbb turn on: IN Figure 3a: Turn on into short circuit, IN t d(bb IN) V bb ST V VOUT td(SC) A OUT ST open drain t A in case of too early VIN=high the device may not turn on (curve A) td(bb IN) approx. 150 s I L t td(SC) approx. 200s if Vbb - VOUT > 3.5 V typ. Figure 3b: Turn on into overload, Figure 2a: Switching an inductive load IN IN IL ST I L(SCp) I L(SCr) V OUT ST I L t t Heating up may require several seconds, Vbb - VOUT < 3.5 V typ. Semiconductor Group 10 BTS 308 Figure 3c: Short circuit while on: Figure 5a: Open load: detection in OFF-state, turn on/off to open load IN IN ST ST t d(ST OL3) V OUT VOUT IL **) t I L open normal *) t **) current peak approx. 20 s in case of external capacity td(ST,OL3) may be higher due to high impedance *) IL = -- A typ Figure 4a: Overtemperature, Reset if (IN=low) and (Tj IN V ST bb V bb(under) Vbb(u cp) Vbb(u rst) V OUT V OUT T J ST open drain t *) ST goes high , when VIN=low and Tj Semiconductor Group 11 BTS 308 Figure 6b: Undervoltage restart of charge pump VON(CL) Figure 9a: Overvoltage at short circuit shutdown: V on IN Vbb V bb(o rst) off-state on-state off-state V Output short to GND V OUT short circuit shutdown bb(over) V V V bb(u rst) bb(o rst) I L bb(u cp) V bb(under) ST V bb t Overvoltage due to power line inductance. No overvoltage autorestart of PROFET after short circuit shutdown. charge pump starts at Vbb(ucp) =4.9 V typ. Figure 7a: Overvoltage: IN Vbb V ON(CL) Vbb(over) V bb(o rst) V OUT ST t Semiconductor Group 12 BTS 308 Package and Ordering Code All dimensions in mm Standard TO-220AB/5 BTS 308 Ordering code tbd SMD TO-220AB/5, Opt. E3062 Ordering code BTS 308 E3062A T&R: tbd TO-220AB/5, Option E3043 Ordering code BTS 308 E3043 tbd Changed since 08.96 Date Change Dec "suitable for PWM" deleted at Application 96 List (Page 1) due to the fact, that where may occure problems with current limit. Initial short circuit current limit IL(SCp) "VON=3V" deleted Option overview, Short circuit to GND protection, "Vbb> 8 V typ" deletet for BTS308, only valid for BTS410H2 Components used in life-support devices or systems must be expressly authorised for such purpose! Critical components13) of the Semiconductor Group of Siemens AG, may only be used in life supporting devices or systems14) with the express written approval of the Semiconductor Group of Siemens AG. 13) A critical component is a component used in a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 14) Life support devices or systems are intended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. If they fail, it is reasonably to assume that the health of the user or other persons may be endangered. Semiconductor Group 13 |
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