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DISCRETE SEMICONDUCTORS DATA SHEET book, halfpage M3D100 BF469; BF471 NPN high-voltage transistors Product specification Supersedes data of September 1994 File under Discrete Semiconductors, SC04 1996 Dec 09 Philips Semiconductors Product specification NPN high-voltage transistors FEATURES * Low feedback capacitance. handbook, halfpage BF469; BF471 APPLICATIONS * Intended for class-B video output stages in television receivers and for high-voltage IF output stages. DESCRIPTION NPN transistors in a TO-126; SOT32 plastic package. PNP complements: BF470 and BF472. 1 2 3 Top view 2 3 1 MAM254 PINNING PIN 1 2 3 emitter collector, connected to mounting base base DESCRIPTION Fig.1 Simplified outline (TO-126; SOT32) and symbol. QUICK REFERENCE DATA SYMBOL VCBO PARAMETER collector-base voltage BF469 BF471 VCEO collector-emitter voltage BF469 BF471 ICM Ptot hFE Cre fT peak collector current total power dissipation DC current gain feedback capacitance transition frequency Tmb 114 C IC = 25 mA; VCE = 20 V IC = ic = 0; VCE = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz open base - - - - 50 - 60 250 300 100 1.8 - 1.8 - pF MHz V V mA W open emitter - - 250 300 V V CONDITIONS MIN. MAX. UNIT 1996 Dec 09 2 Philips Semiconductors Product specification NPN high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 134). SYMBOL VCBO BF469 BF471 VCEO collector-emitter voltage BF469 BF471 VEBO IC ICM IBM Ptot Tstg Tj Tamb emitter-base voltage collector current (DC) peak collector current peak base current total power dissipation storage temperature junction temperature operating ambient temperature Tmb 114 C open collector open base - - - - - - - PARAMETER collector-base voltage CONDITIONS open emitter - - BF469; BF471 MIN. MAX. 250 300 250 300 5 50 100 50 1.8 +150 150 +150 UNIT V V V V V mA mA mA W C C C -65 - -65 THERMAL CHARACTERISTICS SYMBOL Rth j-a Rth j-mb Note 1. Transistor mounted on a printed-circuit board, maximum lead length 4 mm, mounting pad for collector lead minimum 10 x 10 mm. CHARACTERISTICS Tj = 25 C unless otherwise specified. SYMBOL ICBO IEBO hFE VCEsat Cre fT PARAMETER collector cut-off current emitter cut-off current DC current gain collector-emitter saturation voltage feedback capacitance transition frequency CONDITIONS IE = 0; VCB = 200 V IE = 0; VCB = 200 V; Tj = 150 C IC = 0; VEB = 5 V IC = 25 mA; VCE = 20 V IC = 30 mA; IB = 5 mA IC = ic = 0; VCE = 30 V; f = 1 MHz IC = 10 mA; VCE = 10 V; f = 100 MHz - - - 50 - - 60 MIN. MAX. 10 10 50 - 0.6 1.8 - V pF MHz UNIT nA A nA PARAMETER thermal resistance from junction to ambient thermal resistance from junction to mounting base CONDITIONS in free air; note 1 VALUE 100 20 UNIT K/W K/W 1996 Dec 09 3 Philips Semiconductors Product specification NPN high-voltage transistors PACKAGE OUTLINE BF469; BF471 handbook, full pagewidth 2.7 max 7.8 max 3.75 3.2 3.0 11.1 max 2.54 max (1) 1.2 15.3 min 1 0.88 max 0.5 2 3 4.58 90 o 2.29 MBC076 Dimensions in mm. (1) Terminal dimensions within this zone are uncontrolled. Fig.2 TO-126; SOT32. DEFINITIONS Data sheet status Objective specification Preliminary specification Product specification Limiting values Limiting values given are in accordance with the Absolute Maximum Rating System (IEC 134). Stress above one or more of the limiting values may cause permanent damage to the device. These are stress ratings only and operation of the device at these or at any other conditions above those given in the Characteristics sections of the specification is not implied. Exposure to limiting values for extended periods may affect device reliability. Application information Where application information is given, it is advisory and does not form part of the specification. LIFE SUPPORT APPLICATIONS These products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale. 1996 Dec 09 4 This data sheet contains target or goal specifications for product development. This data sheet contains preliminary data; supplementary data may be published later. This data sheet contains final product specifications. |
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