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| MOTOROLA SEMICONDUCTOR TECHNICAL DATA Order this document by 2N5087/D Amplifier Transistor PNP Silicon COLLECTOR 3 2 BASE 1 EMITTER 2N5087 Motorola Preferred Device 1 2 3 MAXIMUM RATINGS Rating Collector - Emitter Voltage Collector - Base Voltage Emitter - Base Voltage Collector Current -- Continuous Total Device Dissipation @ TA = 25C Derate above 25C Total Device Dissipation @ TC = 25C Derate above 25C Operating and Storage Junction Temperature Range Symbol VCEO VCBO VEBO IC PD PD TJ, Tstg Value 50 50 3.0 50 625 5.0 1.5 12 - 55 to +150 Unit Vdc Vdc Vdc mAdc mW mW/C Watts mW/C C CASE 29-04, STYLE 1 TO-92 (TO-226AA) THERMAL CHARACTERISTICS Characteristic Thermal Resistance, Junction to Ambient Thermal Resistance, Junction to Case Symbol RqJA RqJC Max 200 83.3 Unit C/W C/W ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) Characteristic Symbol Min Max Unit OFF CHARACTERISTICS Collector - Emitter Breakdown Voltage(1) (IC = 1.0 mAdc, IB = 0) Collector - Base Breakdown Voltage (IC = 100 Adc, IE = 0) Collector Cutoff Current (VCB = 35 Vdc, IE = 0) Emitter Cutoff Current (VEB = 3.0 Vdc, IC = 0) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. V(BR)CEO V(BR)CBO ICBO IEBO 50 50 -- -- -- -- 50 50 Vdc Vdc nAdc nAdc Preferred devices are Motorola recommended choices for future use and best overall value. (Replaces 2N5086/D) Motorola Small-Signal Transistors, FETs and Diodes Device Data (c) Motorola, Inc. 1997 1 2N5087 ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise noted) (Continued) Characteristic Symbol Min Max Unit ON CHARACTERISTICS DC Current Gain (IC = 100 Adc, VCE = 5.0 Vdc) (IC = 1.0 mAdc, VCE = 5.0 Vdc) (IC = 10 mAdc, VCE = 5.0 Vdc)(1) Collector - Emitter Saturation Voltage (IC = 10 mAdc, IB = 1.0 mAdc) Base - Emitter On Voltage (IC = 1.0 mAdc, VCE = 5.0 Vdc) hFE 250 250 250 VCE(sat) VBE(on) -- -- 800 -- -- 0.3 0.85 Vdc Vdc -- SMALL- SIGNAL CHARACTERISTICS Current - Gain -- Bandwidth Product (IC = 500 Adc, VCE = 5.0 Vdc, f = 20 MHz) Collector-Base Capacitance (VCB = 5.0 Vdc, IE = 0, f = 1.0 MHz) Small-Signal Current Gain (IC = 1.0 mAdc, VCE = 5.0 Vdc, f = 1.0 kHz) Noise Figure (IC = 20 Adc, VCE = 5.0 Vdc, RS = 1.0 k, f = 1.0 kHz) (IC = 100 Adc, VCE = 5.0 Vdc, RS = 3.0 k, f = 1.0 kHz) 1. Pulse Test: Pulse Width 300 ms, Duty Cycle 2.0%. fT Ccb hfe 250 NF -- -- 2.0 2.0 900 dB 40 -- -- 4.0 MHz pF -- 2 Motorola Small-Signal Transistors, FETs and Diodes Device Data 2N5087 TYPICAL NOISE CHARACTERISTICS (VCE = - 5.0 Vdc, TA = 25C) 10 7.0 en, NOISE VOLTAGE (nV) 5.0 IC = 10 A 30 A 3.0 2.0 1.0 mA 100 A 300 A BANDWIDTH = 1.0 Hz RS 0 In, NOISE CURRENT (pA) 1.0 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 1.0 10 20 50 100 200 500 1.0 k f, FREQUENCY (Hz) 2.0 k 5.0 k 10 k 0.1 10 20 50 100 200 500 1.0 k 2.0 k f, FREQUENCY (Hz) 5.0 k 10 k 300 A 100 A 30 A 10 A IC = 1.0 mA BANDWIDTH = 1.0 Hz RS Figure 1. Noise Voltage Figure 2. Noise Current NOISE FIGURE CONTOURS (VCE = - 5.0 Vdc, TA = 25C) 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 200 300 IC, COLLECTOR CURRENT (A) BANDWIDTH = 1.0 Hz RS , SOURCE RESISTANCE (OHMS) RS , SOURCE RESISTANCE (OHMS) BANDWIDTH = 1.0 Hz 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 500 700 1.0 k Figure 3. Narrow Band, 100 Hz Figure 4. Narrow Band, 1.0 kHz RS , SOURCE RESISTANCE (OHMS) 1.0 M 500 k 200 k 100 k 50 k 20 k 10 k 5.0 k 2.0 k 1.0 k 500 200 100 10 20 30 50 70 100 10 Hz to 15.7 kHz Noise Figure is Defined as: NF 0.5 dB 1.0 dB 2.0 dB 3.0 dB 5.0 dB 200 300 500 700 1.0 k IC, COLLECTOR CURRENT (A) 2 212 + 20 log10 en2 ) 4KTRS ) In RS 4KTRS en = Noise Voltage of the Transistor referred to the input. (Figure 3) In = Noise Current of the Transistor referred to the input. (Figure 4) K = Boltzman's Constant (1.38 x 10-23 j/K) T = Temperature of the Source Resistance (K) RS = Source Resistance (Ohms) Figure 5. Wideband Motorola Small-Signal Transistors, FETs and Diodes Device Data 3 2N5087 TYPICAL STATIC CHARACTERISTICS 400 TJ = 125C 25C h FE, DC CURRENT GAIN 200 - 55C 100 80 60 40 0.003 0.005 VCE = 1.0 V VCE = 10 V 0.01 0.02 0.03 0.05 0.07 0.1 0.2 0.3 0.5 0.7 1.0 2.0 IC, COLLECTOR CURRENT (mA) 3.0 5.0 7.0 10 20 30 50 70 100 Figure 6. DC Current Gain VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS) 1.0 TA = 25C 0.8 IC = 1.0 mA 10 mA 50 mA 100 mA IC, COLLECTOR CURRENT (mA) 100 TA = 25C PULSE WIDTH = 300 s 80 DUTY CYCLE 2.0% 300 A 60 IB = 400 A 350 A 250 A 200 A 150 A 0.6 0.4 40 100 A 50 A 0.2 20 0 0.002 0.005 0.01 0.02 0.05 0.1 0.2 0.5 1.0 2.0 IB, BASE CURRENT (mA) 0 5.0 10 20 0 5.0 10 15 20 25 30 35 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 40 Figure 7. Collector Saturation Region Figure 8. Collector Characteristics TJ = 25C 1.2 V, VOLTAGE (VOLTS) 1.0 0.8 VBE(sat) @ IC/IB = 10 0.6 VBE(on) @ VCE = 1.0 V 0.4 0.2 VCE(sat) @ IC/IB = 10 0 0.1 0.2 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 V, TEMPERATURE COEFFICIENTS (mV/C) 1.4 1.6 *APPLIES for IC/IB hFE/2 0.8 *qVC for VCE(sat) 0 - 55C to 25C 0.8 25C to 125C 1.6 25C to 125C qVB for VBE 0.2 - 55C to 25C 2.4 0.1 0.5 1.0 2.0 5.0 10 20 IC, COLLECTOR CURRENT (mA) 50 100 Figure 9. "On" Voltages Figure 10. Temperature Coefficients 4 Motorola Small-Signal Transistors, FETs and Diodes Device Data 2N5087 TYPICAL DYNAMIC CHARACTERISTICS 500 300 200 100 70 50 30 20 td @ VBE(off) = 0.5 V 10 7.0 5.0 1.0 tr VCC = 3.0 V IC/IB = 10 TJ = 25C t, TIME (ns) 1000 700 500 300 200 100 70 50 30 20 10 -1.0 ts VCC = - 3.0 V IC/IB = 10 IB1 = IB2 TJ = 25C t, TIME (ns) tf 2.0 3.0 20 30 5.0 7.0 10 IC, COLLECTOR CURRENT (mA) 50 70 100 - 2.0 - 3.0 - 5.0 - 7.0 -10 - 20 - 30 IC, COLLECTOR CURRENT (mA) - 50 - 70 -100 Figure 11. Turn-On Time f T, CURRENT-GAIN -- BANDWIDTH PRODUCT (MHz) Figure 12. Turn-Off Time 500 TJ = 25C 300 200 VCE = 20 V 5.0 V C, CAPACITANCE (pF) 10 TJ = 25C 7.0 Cib 5.0 3.0 2.0 Cob 100 70 50 0.5 0.7 1.0 2.0 3.0 5.0 7.0 10 20 30 50 1.0 0.05 0.1 0.2 0.5 1.0 2.0 5.0 10 20 50 IC, COLLECTOR CURRENT (mA) VR, REVERSE VOLTAGE (VOLTS) Figure 13. Current-Gain -- Bandwidth Product Figure 14. Capacitance 20 10 hie , INPUT IMPEDANCE (k ) 7.0 5.0 3.0 2.0 1.0 0.7 0.5 0.3 0.2 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 hoe, OUTPUT ADMITTANCE (m mhos) VCE = -10 Vdc f = 1.0 kHz TA = 25C 200 100 70 50 30 20 10 7.0 5.0 3.0 2.0 0.1 0.2 0.5 20 1.0 2.0 5.0 10 IC, COLLECTOR CURRENT (mA) 50 100 VCE = 10 Vdc f = 1.0 kHz TA = 25C Figure 15. Input Impedance Figure 16. Output Admittance Motorola Small-Signal Transistors, FETs and Diodes Device Data 5 2N5087 r(t) TRANSIENT THERMAL RESISTANCE (NORMALIZED) 1.0 0.7 0.5 0.3 0.2 0.1 0.07 0.05 0.03 0.02 0.1 0.05 0.02 0.01 SINGLE PULSE P(pk) t1 t2 2.0 5.0 10 20 50 t, TIME (ms) 100 200 FIGURE 19 DUTY CYCLE, D = t1/t2 D CURVES APPLY FOR POWER PULSE TRAIN SHOWN READ TIME AT t1 (SEE AN-569) ZJA(t) = r(t) * RJA TJ(pk) - TA = P(pk) ZJA(t) 5.0 k 10 k 20 k 50 k 100 k D = 0.5 0.2 0.01 0.01 0.02 0.05 0.1 0.2 0.5 1.0 500 1.0 k 2.0 k Figure 17. Thermal Response 400 IC, COLLECTOR CURRENT (mA) 200 100 60 40 20 10 6.0 4.0 2.0 TC = 25C 1.0 ms 100 s dc TA = 25C dc TJ = 150C CURRENT LIMIT THERMAL LIMIT SECOND BREAKDOWN LIMIT 4.0 6.0 8.0 10 20 VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS) 10 s 1.0 s The safe operating area curves indicate IC-VCE limits of the transistor that must be observed for reliable operation. Collector load lines for specific circuits must fall below the limits indicated by the applicable curve. The data of Figure 18 is based upon TJ(pk) = 150C; TC or TA is variable depending upon conditions. Pulse curves are valid for duty cycles to 10% provided TJ(pk) 150C. TJ(pk) may be calculated from the data in Figure 17. At high case or ambient temperatures, thermal limitations will reduce the power than can be handled to values less than the limitations imposed by second breakdown. 40 Figure 18. Active-Region Safe Operating Area 104 VCC = 30 V IC, COLLECTOR CURRENT (nA) 103 102 101 100 10-1 10-2 - 40 - 20 ICEO DESIGN NOTE: USE OF THERMAL RESPONSE DATA A train of periodical power pulses can be represented by the model as shown in Figure 19. Using the model and the device thermal response the normalized effective transient thermal resistance of Figure 17 was calculated for various duty cycles. To find ZJA(t), multiply the value obtained from Figure 17 by the steady state value RJA. Example: The 2N5087 is dissipating 2.0 watts peak under the following conditions: t1 = 1.0 ms, t2 = 5.0 ms (D = 0.2) Using Figure 17 at a pulse width of 1.0 ms and D = 0.2, the reading of r(t) is 0.22. The peak rise in junction temperature is therefore T = r(t) x P(pk) x RJA = 0.22 x 2.0 x 200 = 88C. For more information, see AN-569. ICBO AND ICEX @ VBE(off) = 3.0 V 0 + 20 + 40 + 60 + 80 + 100 + 120 + 140 + 160 TJ, JUNCTION TEMPERATURE (C) Figure 19. Typical Collector Leakage Current 6 Motorola Small-Signal Transistors, FETs and Diodes Device Data 2N5087 PACKAGE DIMENSIONS NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. CONTOUR OF PACKAGE BEYOND DIMENSION R IS UNCONTROLLED. 4. DIMENSION F APPLIES BETWEEN P AND L. DIMENSION D AND J APPLY BETWEEN L AND K MINIMUM. LEAD DIMENSION IS UNCONTROLLED IN P AND BEYOND DIMENSION K MINIMUM. INCHES MIN MAX 0.175 0.205 0.170 0.210 0.125 0.165 0.016 0.022 0.016 0.019 0.045 0.055 0.095 0.105 0.015 0.020 0.500 --- 0.250 --- 0.080 0.105 --- 0.100 0.115 --- 0.135 --- MILLIMETERS MIN MAX 4.45 5.20 4.32 5.33 3.18 4.19 0.41 0.55 0.41 0.48 1.15 1.39 2.42 2.66 0.39 0.50 12.70 --- 6.35 --- 2.04 2.66 --- 2.54 2.93 --- 3.43 --- A R P SEATING PLANE B F L K D XX G H V 1 J C N N SECTION X-X DIM A B C D F G H J K L N P R V CASE 029-04 (TO-226AA) ISSUE AD STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR Motorola Small-Signal Transistors, FETs and Diodes Device Data 7 2N5087 Motorola reserves the right to make changes without further notice to any products herein. Motorola makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation consequential or incidental damages. "Typical" parameters which may be provided in Motorola data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. Motorola does not convey any license under its patent rights nor the rights of others. Motorola products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the Motorola product could create a situation where personal injury or death may occur. Should Buyer purchase or use Motorola products for any such unintended or unauthorized application, Buyer shall indemnify and hold Motorola and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that Motorola was negligent regarding the design or manufacture of the part. Motorola and are registered trademarks of Motorola, Inc. Motorola, Inc. is an Equal Opportunity/Affirmative Action Employer. Mfax is a trademark of Motorola, Inc. How to reach us: USA / EUROPE / Locations Not Listed: Motorola Literature Distribution; P.O. Box 5405, Denver, Colorado 80217. 303-675-2140 or 1-800-441-2447 JAPAN: Nippon Motorola Ltd.: SPD, Strategic Planning Office, 4-32-1, Nishi-Gotanda, Shinagawa-ku, Tokyo 141, Japan. 81-3-5487-8488 MfaxTM: RMFAX0@email.sps.mot.com - TOUCHTONE 602-244-6609 ASIA/PACIFIC: Motorola Semiconductors H.K. Ltd.; 8B Tai Ping Industrial Park, - US & Canada ONLY 1-800-774-1848 51 Ting Kok Road, Tai Po, N.T., Hong Kong. 852-26629298 INTERNET: http://motorola.com/sps 8 2N5087/D Motorola Small-Signal Transistors, FETs and Diodes Device Data |
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