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| Transistors with built-in Resistor UNR1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/ 111D/111E/111F/111H/111L (UN1111/1112/1113/1114/1115/1116/1117/1118/1119/1110/ 111D/111E/111F/111H/111L) 6.90.1 2.50.1 1.0 Unit: mm 0.4 R0.9 3.50.1 1.0 2.40.2 2.00.2 0.450.05 2 1 2.5 Silicon PNP epitaxial planer transistor For digital circuits 1.5 1.5 R0.9 1.00.1 R 0. s Features q q 0.85 Costs can be reduced through downsizing of the equipment and reduction of the number of parts. M type package allowing easy automatic and manual insertion as well as stand-alone fixing to the printed circuit board. 0.550.1 3 2.5 s Resistance by Part Number q q q q q q q q q q q q q q q UNR1111 UNR1112 UNR1113 UNR1114 UNR1115 UNR1116 UNR1117 UNR1118 UNR1119 UNR1110 UNR111D UNR111E UNR111F UNR111H UNR111L (R1) 10k 22k 47k 10k 10k 4.7k 22k 0.51k 1k 47k 47k 47k 4.7k 2.2k 4.7k (R2) 10k 22k 47k 47k -- -- -- 5.1k 10k -- 10k 22k 10k 10k 4.7k 1:Base 2:Collector 3:Emitter M Type Mold Package Internal Connection R1 1.250.05 C B R2 E s Absolute Maximum Ratings Parameter Collector to base voltage Collector to emitter voltage Collector current Total power dissipation Junction temperature Storage temperature Symbol VCBO VCEO IC PT Tj Tstg (Ta=25C) Ratings -50 -50 -100 400 150 -55 to +150 Unit V V mA mW C C Note) The part numbers in the parenthesis show conventional part number. 4.10.2 4.50.1 7 1 UNR1111/1112/1113/1114/1115/1116/1117/1118/ 1119/1110/111D/111E/111F/111H/111L Transistors with built-in Resistor s Electrical Characteristics Parameter Collector cutoff current UNR1111 UNR1112/1114/111E/111D UNR1113 Emitter cutoff current UNR1115/1116/1117/1110 UNR111F/111H UNR1119 UNR1118/111L Collector to base voltage Collector to emitter voltage UNR1111 Forward current transfer ratio UNR1112/111E UNR1113/1114 (Ta=25C) Symbol ICBO ICEO Conditions VCB = -50V, IE = 0 VCE = -50V, IB = 0 min typ max - 0.1 - 0.5 - 0.5 - 0.2 - 0.1 IEBO VEB = -6V, IC = 0 - 0.01 -1.0 -1.5 -2.0 VCBO VCEO IC = -10A, IE = 0 IC = -2mA, IB = 0 50 50 35 60 hFE VCE = -10V, IC = -5mA 80 160 30 20 VCE(sat) VOH IC = -10mA, IB = - 0.3mA VCC = -5V, VB = - 0.5V, RL = 1k VCC = -5V, VB = -2.5V, RL = 1k VCC = -5V, VB = -3.5V, RL = 1k VCC = -5V, VB = -10V, RL = 1k VCC = -5V, VB = -6V, RL = 1k fT VCB = -10V, IE = 2mA, f = 200MHz 80 10 22 47 R1 (-30%) 4.7 0.51 1 2.2 0.8 0.17 0.08 R1/R2 1.0 0.21 0.1 4.7 2.14 0.47 0.17 0.22 0.27 1.2 0.25 0.12 (+30%) k -4.9 - 0.2 - 0.2 - 0.2 - 0.2 MHz V - 0.25 V V 460 V V mA Unit A A UNR1115*/1116*/1117*/1110* UNR111F/111D/1119/111H UNR1118/111L Collector to emitter saturation voltage Output voltage high level Output voltage low level UNR1113 UNR111D UNR111E Transition frequency UNR1111/1114/1115 UNR1112/1117 Input resistance UNR1113/1110/111D/111E UNR1116/111F/111L UNR1118 UNR1119 UNR111H UNR1111/1112/1113/111L UNR1114 Resistance ratio UNR1118/1119 UNR111D UNR111E UNR111F UNR111H VOL * hFE rank classification (UNR1115/1116/1117/1110) Rank hFE Q 160 to 260 R 210 to 340 S 290 to 460 2 UNR1111/1112/1113/1114/1115/1116/1117/1118/ 1119/1110/111D/111E/111F/111H/111L Transistors with built-in Resistor Common characteristics chart PT -- Ta 500 Total power dissipation PT (mW) 400 300 200 100 0 0 20 40 60 80 100 120 140 160 Ambient temperature Ta (C) Characteristics charts of UNR1111 IC -- VCE -160 -140 IB=-1.0mA Ta=25C -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 160 VCE=-10V hFE -- IC Ta=75C -30 -10 -3 -1 -0.3 -0.1 -25C -0.03 -0.01 -0.1 -0.3 Ta=75C Collector current IC (mA) -0.9mA -120 -100 -80 -60 -0.3mA -40 -0.2mA -20 -0.1mA 0 0 -2 -4 -6 -8 -10 -12 -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA Forward current transfer ratio hFE 25C 120 -25C 80 25C 40 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C VIN -- IO VO=-5V Ta=25C -100 -30 VO=-0.2V Ta=25C -10000 -3000 Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 3 UNR1111/1112/1113/1114/1115/1116/1117/1118/ 1119/1110/111D/111E/111F/111H/111L Transistors with built-in Resistor Characteristics charts of UNR1112 IC -- VCE -160 -140 Ta=25C IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -80 -60 -40 -20 0 0 -2 -4 -6 -8 -10 -12 -0.4mA -0.3mA -0.2mA -0.1mA -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 hFE -- IC 400 VCE=-10V -30 -10 -3 -1 -0.3 -0.1 -25C -0.03 -0.01 -0.1 -0.3 Forward current transfer ratio hFE Collector current IC (mA) -120 -100 300 Ta=75C 200 25C -25C 100 25C Ta=75C -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C VIN -- IO -100 -30 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR1113 IC -- VCE -160 IB=-1.0mA -140 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 400 VCE=-10V Ta=25C Collector to emitter saturation voltage VCE(sat) (V) Collector current IC (mA) -120 -100 -80 -60 -40 -20 0 0 -2 -4 -6 -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -30 -10 -3 -1 -0.3 -0.1 -25C -0.03 -0.01 -0.1 -0.3 Ta=75C Forward current transfer ratio hFE 300 Ta=75C 25C 200 -25C -0.4mA -0.3mA -0.2mA 25C 100 -0.1mA -8 -10 -12 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 4 UNR1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR1114 IC -- VCE -160 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 400 hFE -- IC VCE=-10V IB=-1.0mA -30 -10 -3 -1 -0.3 -0.1 -0.03 -25C -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 25C Ta=75C Collector current IC (mA) -120 -100 -80 -60 -40 -20 0 0 -2 -4 -6 -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -0.1mA Forward current transfer ratio hFE -140 300 Ta=75C 200 25C -25C 100 -8 -10 -12 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -1000 -300 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -1000 -300 -100 -30 -10 -3 -100 -30 -10 -3 -1 -0.3 -0.1 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 5 UNR1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Characteristics charts of UNR1115 IC -- VCE -160 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 Ta=25C hFE -- IC VCE=-10V Collector current IC (mA) -120 -100 -80 -60 -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -10 -3 -1 -0.3 -0.1 -0.03 -25C -0.01 -0.1 -0.3 -1 25C Ta=75C Forward current transfer ratio hFE -140 IB=-1.0mA -30 300 Ta=75C 200 25C -25C 100 -40 -0.1mA -20 0 0 -2 -4 -6 -8 -10 -12 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -3 -1 -0.3 -0.1 3 2 1 -0.03 -0.01 -0.1 -0.3 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR1116 IC -- VCE -160 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 400 -30 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 25C Ta=75C hFE -- IC VCE= -10V Collector current IC (mA) -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -120 -100 -80 -60 -40 -20 0 0 -2 -4 -6 -8 Forward current transfer ratio hFE -140 IB=-1.0mA 300 Ta=75C -0.4mA -0.3mA -0.2mA 200 25C -25C 100 -0.1mA -25C -10 -12 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 6 UNR1111/1112/1113/1114/1115/1116/1117/1118/ 1119/1110/111D/111E/111F/111H/111L Transistors with built-in Resistor Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C VIN -- IO VO=-5V Ta=25C -100 -30 VO=-0.2V Ta=25C -10000 -3000 Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR1117 IC -- VCE -120 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 400 hFE -- IC VCE=-10V -100 Collector current IC (mA) -80 IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -0.5mA -0.4mA -10 -3 -1 -0.3 -0.1 -25C -0.03 -0.01 -0.1 -0.3 25C Ta=75C Forward current transfer ratio hFE -30 300 -60 -0.3mA -0.2mA -20 -0.1mA 200 Ta=75C -40 25C 100 -25C 0 0 -2 -4 -6 -8 -10 -12 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 -10000 IO -- VIN f=1MHz IE=0 Ta=25C VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) -3000 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 7 UNR1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Characteristics charts of UNR1118 IC -- VCE -240 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 160 hFE -- IC VCE= -10V -200 -30 -10 -3 -1 Ta=75C -0.3 25C -0.1 -0.03 -25C IB=-1.0mA -0.9mA -160 -0.8mA -0.7mA -120 -0.6mA -0.5mA -0.4mA -0.3mA -40 -0.2mA -0.1mA 0 0 -2 -4 -6 -8 -10 -12 Forward current transfer ratio hFE Collector current IC (mA) 120 Ta=75C 80 25C -25C 40 -80 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR1119 IC -- VCE -240 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 160 -30 -10 -3 -1 -0.3 25C -0.1 -0.03 -25C hFE -- IC VCE= -10V -200 Forward current transfer ratio hFE Collector current IC (mA) -160 IB=-1.0mA -0.9mA -0.8mA -0.7mA 120 Ta=75C 80 25C -25C -120 Ta=75C -80 -0.6mA -0.5mA -0.4mA -0.3mA -0.2mA -0.1mA 0 -2 -4 -6 -8 -10 -12 40 -40 0 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 8 UNR1111/1112/1113/1114/1115/1116/1117/1118/ 1119/1110/111D/111E/111F/111H/111L Transistors with built-in Resistor Cob -- VCB 6 -10000 f=1MHz IE=0 Ta=25C -3000 IO -- VIN VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR1110 IC -- VCE -120 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) IC/IB=10 400 hFE -- IC VCE= -10V -30 -10 -3 -1 Ta=75C -0.3 -0.1 -0.03 -25C 25C Forward current transfer ratio hFE Collector current IC (mA) Ta=25C IB=-1.0mA -0.9mA -100 -0.8mA -0.7mA -0.6mA -0.5mA -80 -0.4mA -0.3mA -60 -0.2mA -40 -0.1mA -20 300 Ta=75C 200 25C -25C 100 0 0 -2 -4 -6 -8 -10 -12 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 -10000 f=1MHz IE=0 Ta=25C -3000 IO -- VIN VO=-5V Ta=25C VIN -- IO -100 -30 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -0.6 -0.8 -1.0 -1.2 -1.4 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 9 UNR1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Characteristics charts of UNR111D IC -- VCE -60 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 160 VCE=-10V Collector to emitter saturation voltage VCE(sat) (V) -50 -30 -10 -3 -1 -0.3 25C -0.1 -0.03 -25C Ta=75C Forward current transfer ratio hFE IB=-1.0mA -0.9mA -0.8mA Ta=25C Collector current IC (mA) 120 Ta=75C -40 -0.3mA -30 -0.2mA -0.7mA -0.6mA -0.5mA -0.4mA -0.1mA -10 25C 80 -25C -20 40 0 0 -2 -4 -6 -8 -10 -12 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -2.0 -2.5 -3.0 -3.5 -4.0 -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -1.5 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR111E IC -- VCE -60 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 400 VCE=-10V Collector to emitter saturation voltage VCE(sat) (V) -50 -10 -3 -1 -0.3 -0.1 -0.03 -25C Forward current transfer ratio hFE IB=-1.0mA -0.9mA -0.8mA -0.7mA Ta=25C -30 Collector current IC (mA) 300 -40 -0.3mA -30 -0.6mA -0.5mA -0.4mA -0.2mA Ta=75C 25C 200 Ta=75C 100 25C -25C -20 -0.1mA -10 0 0 -2 -4 -6 -8 -10 -12 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 10 UNR1111/1112/1113/1114/1115/1116/1117/1118/ 1119/1110/111D/111E/111F/111H/111L Transistors with built-in Resistor Cob -- VCB 6 -10000 f=1MHz IE=0 Ta=25C -3000 IO -- VIN VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 -300 -100 -30 -10 -3 Input voltage VIN (V) -2.0 -2.5 -3.0 -3.5 -4.0 -1000 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -1.5 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) Characteristics charts of UNR111F IC -- VCE -240 -100 VCE(sat) -- IC Collector to emitter saturation voltage VCE(sat) (V) Ta=25C IC/IB=10 160 hFE -- IC VCE=-10V -200 Collector current IC (mA) -160 IB=-1.0mA -0.9mA -0.8mA -0.7mA -0.6mA -30 -10 -3 -1 Ta=75C -0.3 25C -0.1 -0.03 Forward current transfer ratio hFE 120 Ta=75C 25C 80 -25C -120 -0.5mA -80 -0.4mA -0.3mA -40 -0.2mA -0.1mA 0 -2 -4 -6 -8 -10 -12 40 -25C 0 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 IO -- VIN f=1MHz IE=0 Ta=25C -10000 -3000 VO=-5V Ta=25C -100 -30 VIN -- IO VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 Output current IO (A) 4 Input voltage VIN (V) -1000 -300 -100 -30 -10 -3 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -0.1 -0.3 3 2 1 0 -0.1 -0.3 -1 -3 -10 -30 -100 -1 -0.4 -0.6 -0.8 -1.0 -1.2 -1.4 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Input voltage VIN (V) Output current IO (mA) 11 UNR1111/1112/1113/1114/1115/1116/1117/1118/ Transistors with built-in Resistor 1119/1110/111D/111E/111F/111H/111L Characteristics charts of UNR111H IC -- VCE -120 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 240 VCE=-10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25C -100 Forward current transfer ratio hFE 200 Collector current IC (mA) -10 -80 IB=-0.5mA -0.4mA 160 Ta=75C 120 25C 80 -25C 40 -60 -0.3mA -40 -0.2mA -20 -0.1mA 0 0 -2 -4 -6 -8 -10 -12 -1 Ta=75C 25C -0.1 -25C -0.01 -1 -3 -10 -30 -100 -300 -1000 0 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) Cob -- VCB 6 VIN -- IO f=1MHz IE=0 Ta=25C -100 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) -10 3 -1 2 -0.1 1 0 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Output current IO (mA) Characteristics charts of UNR111L IC -- VCE -240 VCE(sat) -- IC -100 hFE -- IC IC/IB=10 240 VCE= -10V Collector to emitter saturation voltage VCE(sat) (V) Ta=25C -200 Forward current transfer ratio hFE -30 -10 -3 -1 -0.3 -0.1 -0.03 -0.01 -1 Ta=75C 25C -25C 200 Collector current IC (mA) -160 IB=-1.0mA -0.8mA -80 -0.6mA -0.4mA -0.2mA 0 0 -2 -4 -6 -8 -10 -12 160 -120 120 Ta=75C 25C -25C 80 -40 40 -3 -10 -30 -100 -300 -1000 0 -1 -3 -10 -30 -100 -300 -1000 Collector to emitter voltage VCE (V) Collector current IC (mA) Collector current IC (mA) 12 UNR1111/1112/1113/1114/1115/1116/1117/1118/ 1119/1110/111D/111E/111F/111H/111L Transistors with built-in Resistor Cob -- VCB 6 VIN -- IO f=1MHz IE=0 Ta=25C -100 VO=-0.2V Ta=25C Collector output capacitance Cob (pF) 5 4 Input voltage VIN (V) -10 3 -1 2 -0.1 1 0 -1 -3 -10 -30 -100 -0.01 -0.1 -0.3 -1 -3 -10 -30 -100 Collector to base voltage VCB (V) Output current IO (mA) 13 Request for your special attention and precautions in using the technical information and semiconductors described in this material (1) An export permit needs to be obtained from the competent authorities of the Japanese Government if any of the products or technologies described in this material and controlled under the "Foreign Exchange and Foreign Trade Law" is to be exported or taken out of Japan. (2) The technical information described in this material is limited to showing representative characteristics and applied circuit examples of the products. It does not constitute the warranting of industrial property, the granting of relative rights, or the granting of any license. (3) The products described in this material are intended to be used for standard applications or general electronic equipment (such as office equipment, communications equipment, measuring instruments and household appliances). Consult our sales staff in advance for information on the following applications: * Special applications (such as for airplanes, aerospace, automobiles, traffic control equipment, combustion equipment, life support systems and safety devices) in which exceptional quality and reliability are required, or if the failure or malfunction of the products may directly jeopardize life or harm the human body. * Any applications other than the standard applications intended. (4) The products and product specifications described in this material are subject to change without notice for reasons of modification and/or improvement. At the final stage of your design, purchasing, or use of the products, therefore, ask for the most up-to-date Product Standards in advance to make sure that the latest specifications satisfy your requirements. (5) When designing your equipment, comply with the guaranteed values, in particular those of maximum rating, the range of operating power supply voltage and heat radiation characteristics. Otherwise, we will not be liable for any defect which may arise later in your equipment. Even when the products are used within the guaranteed values, redundant design is recommended, so that such equipment may not violate relevant laws or regulations because of the function of our products. (6) When using products for which dry packing is required, observe the conditions (including shelf life and after-unpacking standby time) agreed upon when specification sheets are individually exchanged. (7) No part of this material may be reprinted or reproduced by any means without written permission from our company. Please read the following notes before using the datasheets A. These materials are intended as a reference to assist customers with the selection of Panasonic semiconductor products best suited to their applications. Due to modification or other reasons, any information contained in this material, such as available product types, technical data, and so on, is subject to change without notice. Customers are advised to contact our semiconductor sales office and obtain the latest information before starting precise technical research and/or purchasing activities. B. Panasonic is endeavoring to continually improve the quality and reliability of these materials but there is always the possibility that further rectifications will be required in the future. Therefore, Panasonic will not assume any liability for any damages arising from any errors etc. that may appear in this material. C. These materials are solely intended for a customer's individual use. Therefore, without the prior written approval of Panasonic, any other use such as reproducing, selling, or distributing this material to a third party, via the Internet or in any other way, is prohibited. 2001 MAR |
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