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| FGA25N120ANTD 1200V NPT Trench IGBT August 2005 FGA25N120ANTD 1200V NPT Trench IGBT Features * NPT Trench Technology, Positive temperature coefficient * Low saturation voltage: VCE(sat), typ = 2.0V @ IC = 25A and TC = 25C * Low switching loss: Eoff, typ = 0.96mJ @ IC = 25A and TC = 25C * Extremely enhanced avalanche capability Description Using Fairchild's proprietary trench design and advanced NPT technology, the 1200V NPT IGBT offers superior conduction and switching performances, high avalanche ruggedness and easy parallel operation. This device is well suited for the resonant or soft switching application such as induction heating, microwave oven, etc. C G GCE TO-3P E Absolute Maximum Ratings Symbol VCES VGES IC ICM IF IFM PD TJ Tstg TL Gate-Emitter Voltage Collector Current Collector Current Pulsed Collector Current (Note 1) Description Collector-Emitter Voltage @ TC = 25C @ TC = 100C @ TC = 100C @ TC = 25C @ TC = 100C FGA25N120ANTD 1200 20 50 25 75 25 150 312 125 -55 to +150 -55 to +150 300 Units V V A A A A A W W C C C Diode Continuous Forward Current Diode Maximum Forward Current Maximum Power Dissipation Maximum Power Dissipation Operating Junction Temperature Storage Temperature Range Maximum Lead Temp. for soldering Purposes, 1/8" from case for 5 seconds Thermal Characteristics Symbol RJC RJC RJA Parameter Thermal Resistance, Junction-to-Case for IGBT Thermal Resistance, Junction-to-Case for Diode Thermal Resistance, Junction-to-Ambient Typ. ---- Max. 0.4 2.0 40 Units C/W C/W C/W (c)2005 Fairchild Semiconductor Corporation 1 www.fairchildsemi.com FGA25N120ANTD Rev. B FGA25N120ANTD 1200V NPT Trench IGBT Package Marking and Ordering Information Device Marking FGA25N120ANTD Device FGA25N120ANTD Package TO-3P Reel Size -- Tape Width -- Quantity 30 Electrical Characteristics of the IGBT Symbol Off Characteristics ICES IGES Collector Cut-Off Current G-E Leakage Current TC = 25C unless otherwise noted Parameter Test Conditions Min. Typ. Max. Units VCE = VCES, VGE = 0V VGE = VGES, VCE = 0V --- --- 3 250 mA nA On Characteristics VGE(th) VCE(sat) G-E Threshold Voltage Collector to Emitter Saturation Voltage IC = 25mA, VCE = VGE IC = 25A, VGE = 15V IC = 25A, VGE = 15V, TC = 125C IC = 50A, Dynamic Characteristics Cies Coes Cres Input Capacitance Output Capacitance Reverse Transfer Capacitance VCE = 30V, VGE = 0V, f = 1MHz ---3700 130 80 ---pF pF pF VGE = 15V 3.5 ---5.5 2.0 2.15 2.65 7.5 2.5 --V V V V Switching Characteristics td(on) tr td(off) tf Eon Eoff Ets td(on) tr td(off) tf Eon Eoff Ets Qg Qge Qgc Notes: (1) Repetitive rating: Pulse width limited by max. junction temperature Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Turn-On Switching Loss Turn-Off Switching Loss Total Switching Loss Total Gate Charge Gate-Emitter Charge Gate-Collector Charge VCC = 600 V, IC = 25A, RG = 10, VGE = 15V, Inductive Load, TC = 25C -------- 50 60 190 100 4.1 0.96 5.06 50 60 200 154 4.3 1.5 5.8 200 15 100 -90 -180 6.2 1.5 7.7 ----6.9 2.4 9.3 300 23 150 ns ns ns ns mJ mJ mJ ns ns ns ns mJ mJ mJ nC nC nC VCC = 600 V, IC = 25A, RG = 10, VGE = 15V, Inductive Load, TC = 125C -------- VCE = 600 V, IC = 25A, VGE = 15V ---- FGA25N120ANTD Rev. B 2 www.fairchildsemi.com FGA25N120ANTD 1200V NPT Trench IGBT Electrical Characteristics of DIODE T Symbol VFM trr Irr Qrr C = 25C unless otherwise noted Parameter Diode Forward Voltage Diode Reverse Recovery Time Diode Peak Reverse Recovery Current Diode Reverse Recovery Charge IF = 25A Test Conditions TC = 25C TC = 125C IF = 25A dI/dt = 200 A/s TC = 25C TC = 125C TC = 25C TC = 125C TC = 25C TC = 125C Min. --------- Typ. 2.0 2.1 235 300 27 31 3130 4650 Max. 3.0 -350 -40 -4700 -- Units V ns A nC FGA25N120ANTD Rev. B 3 www.fairchildsemi.com FGA25N120ANTD 1200V NPT Trench IGBT Typical Performance Characteristics Figure 1. Typical Output Characteristics 180 160 140 Figure 2. Typical Saturation Voltage Characteristics 120 Common Emitter VGE = 15V TC = 25C TC = 125C 80 TC = 25C 20V 17V 15V 12V 10V 100 Collector Current, IC [A] 120 100 80 60 40 20 0 0 2 4 6 8 10 7V VGE = 6V 8V 9V Collector Current, IC [A] 60 40 20 0 0 1 2 3 4 5 Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 3. Saturation Voltage vs. Case Temperature at Variant Current Level 3.0 Common Emitter VGE = 15V Figure 4. Saturation Voltage vs. VGE 20 Common Emitter TC = -40C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 16 2.5 40A 12 2.0 IC = 25A 8 40A 25A 4 IC = 12.5A 1.5 25 50 75 100 125 0 0 4 8 12 16 20 Case Temperature, TC [C] Gate-Emitter Voltage, VGE [V] Figure 5. Saturation Voltage vs. VGE 20 Common Emitter TC = 25C Figure 6. Saturation Voltage vs. VGE 20 Common Emitter TC = 125C Collector-Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] 16 16 12 12 8 40A 25A IC = 12.5A 8 40A 25A 4 4 IC = 12.5A 0 0 4 8 0 0 4 8 12 16 20 12 16 20 Gate-Emitter Voltage, VGE [V] Gate-Emitter Voltage, VGE [V] FGA25N120ANTD Rev. B 4 www.fairchildsemi.com FGA25N120ANTD 1200V NPT Trench IGBT Typical Performance Characteristics Figure 7. Capacitance Characteristics 5000 4500 4000 3500 Ciss (Continued) Figure 8. Turn-On Characteristics vs. Gate Resistance Common Emitter VGE = 0V, f = 1MHz TC = 25C 100 Switching Time [ns] Capacitance [pF] 3000 2500 2000 1500 1000 Coss 500 0 1 Crss 10 tr td(on) Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25C TC = 125C 10 0 10 20 30 40 50 60 70 Collector-Emitter Voltage, VCE [V] Gate Resistance, RG [] Figure 9. Turn-Off Characteristics vs. Gate Resistance 1000 Figure 10. Switching Loss vs. Gate Resistance Common Emitter VCC = 600V, VGE = 15V td(off) IC = 25A 10 TC = 25C TC = 125C Eon 100 tf Common Emitter VCC = 600V, VGE = 15V IC = 25A TC = 25C TC = 125C 10 0 10 20 30 40 50 60 70 Switching Loss [mJ] Switching Time [ns] Eoff 1 0 10 20 30 40 50 60 70 Gate Resistance, RG [] Gate Resistance, RG [] Figure 11. Turn-On Characteristics vs. Collector Current Common Emitter VGE = 15V, RG = 10 TC = 25C TC = 125C Figure 12. Turn-Off Characteristics vs. Collector Current td(off) Switching Time [ns] 100 Switching Time [ns] tr 100 tf td(on) Common Emitter VGE = 15V, RG = 10 TC = 25C TC = 125C 10 20 30 40 50 10 20 30 40 50 Collector Current, IC [A] Collector Current, IC [A] FGA25N120ANTD Rev. B 5 www.fairchildsemi.com FGA25N120ANTD 1200V NPT Trench IGBT Typical Performance Characteristics (Continued) Figure 13. Switching Loss vs. Collector Current Common Emitter VGE = 15V, RG = 10 10 TC = 25C TC = 125C Figure 14. Gate Charge Characteristics 16 Common Emitter RL = 24 TC = 25C 12 10 8 6 4 2 0 Vcc = 200V 600V 400V Eon 14 Eoff 1 0.1 10 20 30 40 50 Gate-Emitter Voltage, VGE [V] Switching Loss [mJ] 0 20 40 60 80 100 120 140 160 180 200 Collector Current, IC [A] Gate Charge, Qg [nC] Figure 15. SOA Characteristics 100 Ic MAX (Pulsed) 50s Ic MAX (Continuous) 100s Figure 16. Turn-Off SOA 100 Collector Current, Ic [A] 1ms DC Operation 1 Collector Current, IC [A] 10 10 0.1 Single Nonrepetitive Pulse TC = 25C Curves must be derated linearly with increase in temperature 0.01 0.1 1 10 100 1000 1 1 10 Safe Operating Area VGE = 15V, TC = 125C 100 1000 Collector - Emitter Voltage, VCE [V] Collector-Emitter Voltage, VCE [V] Figure 17. Transient Thermal Impedance of IGBT 10 T h er m al R e s p o n s e [ Zthjc ] 1 0.5 0.1 0.2 0.1 0.05 Pdm t1 t2 0.01 0.02 0.01 single pulse 1E-3 1E-5 1E-4 1E-3 0.0 1 0.1 Duty factor D = t1 / t2 Peak Tj = Pdm x Zthjc + TC 1 10 R e c t a n g u l a r P u l s e D u r a ti o n [ s e c ] FGA25N120ANTD Rev. B 6 www.fairchildsemi.com FGA25N120ANTD 1200V NPT Trench IGBT Typical Performance Characteristics Figure 18. Forward Characteristics 50 (Continued) Figure 19. Reverse Recovery Current 30 Forward Current , IF [A] 10 Reverse Recovery Currnet , Irr [A] 25 di/dt = 200A/s 20 TJ = 125C 15 di/dt = 100A/s 10 1 T J = 25C T C = 125C 0.1 0.0 0.4 0.8 1.2 T C = 25C 1.6 2.0 5 0 5 10 15 20 25 Forward Voltage , VF [V] Forward Current , IF [A] Figure 20. Stored Charge 4000 Figure 21. Reverse Recovery Time 300 di/dt = 100A/s Stored Recovery Charge , Qrr [nC] 3000 di/dt = 200A/s Reverse Recovery Time , trr [ns] 200 di/dt = 200A/s 2000 di/dt = 100A/s 1000 100 0 5 10 15 20 25 0 5 10 15 20 25 Forward Current , IF [A] Forward Current , IF [A] FGA25N120ANTD Rev. B 7 www.fairchildsemi.com FGA25N120ANTD 1200V NPT Trench IGBT Mechanical Dimensions TO-3P 15.60 0.20 3.80 0.20 13.60 0.20 o3.20 0.10 9.60 0.20 4.80 0.20 1.50 -0.05 +0.15 12.76 0.20 19.90 0.20 16.50 0.30 3.00 0.20 1.00 0.20 3.50 0.20 2.00 0.20 13.90 0.20 23.40 0.20 18.70 0.20 1.40 0.20 5.45TYP [5.45 0.30] 5.45TYP [5.45 0.30] 0.60 -0.05 +0.15 Dimensions in Millimeters FGA25N120ANTD Rev. B 8 www.fairchildsemi.com FGA25N120ANTD 1200V NPT Trench IGBT TRADEMARKS The following are registered and unregistered trademarks Fairchild Semiconductor owns or is authorized to use and is not intended to be an exhaustive list of all such trademarks. ACExTM ActiveArrayTM BottomlessTM Build it NowTM CoolFETTM CROSSVOLTTM DOMETM EcoSPARKTM E2CMOSTM EnSignaTM FACTTM FACT Quiet SeriesTM FAST(R) FASTrTM FPSTM FRFETTM GlobalOptoisolatorTM GTOTM HiSeCTM I2CTM i-LoTM ImpliedDisconnectTM IntelliMAXTM Across the board. Around the world.TM The Power Franchise(R) Programmable Active DroopTM ISOPLANARTM LittleFETTM MICROCOUPLERTM MicroFETTM MicroPakTM MICROWIRETM MSXTM MSXProTM OCXTM OCXProTM OPTOLOGIC(R) OPTOPLANARTM PACMANTM POPTM Power247TM PowerEdgeTM PowerSaverTM PowerTrench(R) QFET(R) QSTM QT OptoelectronicsTM Quiet SeriesTM RapidConfigureTM RapidConnectTM SerDesTM SILENT SWITCHER(R) SMART STARTTM SPMTM StealthTM SuperFETTM SuperSOTTM-3 SuperSOTTM-6 SuperSOTTM-8 SyncFETTM TinyLogic(R) TINYOPTOTM TruTranslationTM UHCTM UltraFET(R) UniFETTM VCXTM WireTM DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. LIFE SUPPORT POLICY FAIRCHILD'S PRODUCTS ARE NOT AUTHORIZED FOR USE AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS WITHOUT THE EXPRESS WRITTEN APPROVAL OF FAIRCHILD SEMICONDUCTOR CORPORATION. As used herein: 1. Life support devices or systems are devices or systems which, (a) are intended for surgical implant into the body, or (b) support or sustain life, or (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in significant injury to the user. 2. A critical component is any component of a life support device or system whose failure to perform can be reasonably expected to cause the failure of the life support device or system, or to affect its safety or effectiveness. PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Advance Information Product Status Formative or In Design First Production Definition This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. I16 Preliminary No Identification Needed Full Production Obsolete Not In Production 9 FGA25N120ANTD Rev. B www.fairchildsemi.com |
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