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| CEM9945 March 1998 Dual N-Channel Enhancement Mode Field Effect Transistor 5 FEATURES 60V , 3.3A , RDS(ON)=100m @VGS=10V. RDS(ON)=200m @VGS=4.5V. Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface Mount Package. 1 2 3 4 D1 8 D1 7 D2 6 D2 5 SO-8 1 S1 G1 S2 G2 ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TJ=125 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit 60 20 3.3 10 1.7 2 -55 to 150 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 62.5 C/W 5-166 CEM9945 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS c Symbol Condition VGS = 0V, ID = 250A VDS = 48V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = 250A VGS =10V, ID= 3.3A VGS = 4.5V, ID= 2.5A VGS = 10V, VDS = 5V VDS = 10V, ID = 3.3A Min Typ C Max Unit 5 60 1 V A 100 nA 1 1.4 68 80 10 7 480 130 30 3 100 V m ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance 200 m A S DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS c PF PF PF VDS =25V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = 30V, ID = 1A, VGEN = 10V, RGEN = 6 12 5 20 17 13 17 12 30 24 17 ns ns ns ns nC nC nC VDS = 48V, ID = 3.3A, VGS = 10V 5-167 2.6 3.2 CEM9945 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is =1.7A Min Typ Max Unit 0.8 1.2 V C DRAIN-SOURCE DIODE CHARACTERISTICS b Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 25 VGS=10,9,8,7,6V 5V 20 8 10 25 C ID, Drain Current(A) ID, Drain Current (A) Tj=-55 C 6 15 4V 10 VGS=3V 5 0 0 1.0 2.0 3.0 4.0 5.0 4 125 C 2 0 0.0 1.0 2.0 3.0 4.0 5.0 6.0 VDS, Drain-to-Source Voltage (V) VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics RDS(ON), On-Resistance(Ohms) 1200 1000 0.14 Figure 2. Transfer Characteristics VGS=10V 0.12 Tj=125 C 0.10 0.08 25 C 0.06 0.04 -55 C 0.02 0 5 10 15 20 C, Capacitance (pF) 800 600 400 200 Crss 0 0 5 10 15 20 25 30 Ciss Coss VDS, Drain-to Source Voltage (V) ID, Drain Current(A) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 5-168 CEM9945 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=250 A BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.09 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 0 25 50 75 100 125 150 ID=250 A 5 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 10 Figure 6. Breakdown Voltage Variation with Temperature 20 gFS, Transconductance (S) 6 4 2 VDS=10V 0 0 2 4 6 8 10 Is, Source-drain current (A) 8 10 1 0.4 0.6 0.8 1.0 1.2 1.4 IDS, Drain-Source Current (A) VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 10 ID, Drain Current (A) Figure 8. Body Diode Forward Voltage Variation with Source Current 40 VGS, Gate to Source Voltage (V) 8 6 4 2 0 0 VDS=48V ID=3.3A 10 RD S ( ) ON Lim it 10 10 0m ms 11 DC 1s s 0.1 0.01 VGS=10V Single Pulse TA=25 C 0.1 1 10 60 80 2 4 6 8 10 12 14 16 Qg, Total Gate Charge (nC) VDS, Drain-Source Voltage (V) Figure 9. Gate Charge 5-169 Figure 10. Maximum Safe Operating Area CEM9945 VDD t on toff tr 90% 5 VGS RGEN V IN D G RL VOUT td(on) VOUT td(off) 90% 10% tf 10% INVERTED 90% S VIN 50% 10% 50% PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 2 r(t),Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 PDM t1 t2 1. R JA (t)=r (t) * R JA 2. R JA=See Datasheet 3. TJM-TA = PDM* R JA (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -3 10 -1 1 10 100 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 5-170 |
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