 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| CEM4435 P-Channel Enhancement Mode Field Effect Transistor 5 FEATURES -30V , -8A , RDS(ON)=20m -5A , RDS(ON)=35m @VGS=-10V. @VGS=-4.5V. D 8 D 7 D 6 D 5 Super high dense cell design for extremely low RDS(ON). High power and current handing capability. Surface mount Package. 1 2 3 4 SO-8 1 S S S G ABSOLUTE MAXIMUM RATINGS (TA=25 C unless otherwise noted) Parameter Drain-Source Voltage Gate-Source Voltage Drain Current-Continuous a @TJ=125 C b -Pulsed Drain-Source Diode Forward Current a Maximum Power Dissipation a Operating Junction and Storage Temperature Range Symbol VDS VGS ID IDM IS PD TJ, TSTG Limit -30 20 8 50 -2.1 2.5 -55 to 150 Unit V V A A A W C THERMAL CHARACTERISTICS Thermal Resistance, Junction-to-Ambient a R JA 50 C/W 5-44 CEM4435 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter OFF CHARACTERISTICS Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage BVDSS IDSS IGSS VGS(th) RDS(ON) ID(ON) gFS c Symbol Condition VGS = 0V, ID = -250A VDS = -30V, VGS = 0V VGS = 20V, VDS = 0V VDS = VGS, ID = -250A VGS =-10V, ID = -8A VGS =-4.5V, ID = -5A VDS = -5V, VGS = -10V VDS = -15V, ID = -8A Min Typ C Max Unit 5 -30 -1 V A 100 nA -1 -1.5 17 27 -20 15 2647 870 227 -3 20 35 V m m A S ON CHARACTERISTICS b Gate Threshold Voltage Drain-Source On-State Resistance On-State Drain Current Forward Transconductance DYNAMIC CHARACTERISTICS Input Capacitance Output Capacitance Reverse Transfer Capacitance CISS COSS CRSS c PF PF PF VDS =-15V, VGS = 0V f =1.0MHZ SWITCHING CHARACTERISTICS Turn-On Delay Time Rise Time Turn-Off Delay Time Fall Time Total Gate Charge Gate-Source Charge Gate-Drain Charge tD(ON) tr tD(OFF) tf Qg Qgs Qgd VDD = -15V, ID = -1A, VGS = -10V, RGEN = 6 22 20 60 32 30 28 84 38 ns ns ns ns nC nC nC 105 145 VDS =-15V, ID = -4.6A, VGS =-5V 5-45 4 15 CEM4435 ELECTRICAL CHARACTERISTICS (TA=25 C unless otherwise noted) Parameter 5 Diode Forward Voltage Symbol VSD Condition VGS = 0V, Is = -2.1A Min Typ C Max Unit -0.75 -1.2 V DRAIN-SOURCE DIODE CHARACTERISTICS b Notes a.Surface Mounted on FR4 Board, t 10sec. b.Pulse Test:Pulse Width 300 s, Duty Cycle 2%. c.Guaranteed by design, not subject to production testing. 25 -VGS=10,8,7,6,5V 20 30 -55 C 25 C 24 -VGS=4V -ID, Drain Current(A) 15 -ID, Drain Current (A) Tj=125 C 18 10 12 5 -VGS=3V 6 0 0 1 2 3 4 5 6 0 0 0.5 1.0 1.5 2.0 2.5 3.0 -VDS, Drain-to-Source Voltage (V) -VGS, Gate-to-Source Voltage (V) Figure 1. Output Characteristics 3600 3000 Figure 2. Transfer Characteristics RDS (ON), On-Resistance (Ohms) 0.06 VGS=-10V 0.05 Tj=125 C 0.04 0.03 25 C 0.02 -55 C 0.01 0 C, Capacitance (pF) Ciss 2400 1800 1200 600 Crss 0 0 5 10 15 20 25 30 Coss 0 5 10 15 20 -VDS, Drain-to Source Voltage (V) -ID, Drain Current(A) Figure 3. Capacitance Figure 4. On-Resistance Variation with Drain Current and Temperature 5-46 CEM4435 BVDSS, Normalized Drain-Source Breakdown Voltage Vth, Normalized Gate-Source Threshold Voltage 1.09 1.06 1.03 1.00 0.97 0.94 0.91 -50 -25 0 25 50 75 100 125 150 VDS=VGS ID=-250 A 1.15 1.10 1.05 1.00 0.95 0.90 0.85 -50 -25 ID=-250 A 5 0 25 50 75 100 125 150 Tj, Junction Temperature ( C) Tj, Junction Temperature ( C) Figure 5. Gate Threshold Variation with Temperature 20 Figure 6. Breakdown Voltage Variation with Temperature 20.0 VGS=0V gFS, Transconductance (S) 16 12 8 4 VDS=-15V 0 0 5 10 15 20 -Is, Source-drain current (A) 10.0 1.0 0.4 0.6 0.8 1.0 1.2 1.4 -IDS, Drain-Source Current (A) -VSD, Body Diode Forward Voltage (V) Figure 7. Transconductance Variation with Drain Current 10 -ID, Drain Current (A) Figure 8. Body Diode Forward Voltage Variation with Source Current 80 VGS, Gate to Source Voltage (V) 8 6 4 2 0 0 VDS=-15V ID=-4.6A 10 RD S ( ) ON Lim it 10m 10 0m s s 1 1s DC 0.1 0.03 VGS=-10V Single Pulse TA=25 C 0.1 1 10 30 50 7 14 21 28 35 42 49 56 Qg, Total Gate Charge (nC) -VDS, Drain-Source Voltage (V) Figure 9. Gate Charge 5-47 Figure 10. Maximum Safe Operating Area CEM4435 -VDD t on toff tr 90% 5 VGS RGEN V IN D G RL VOUT td(on) VOUT td(off) 90% 10% tf 10% 90% S VIN 50% 10% 50% INVERTED PULSE WIDTH Figure 11. Switching Test Circuit Figure 12. Switching Waveforms 2 r(t),Normalized Effective Transient Thermal Impedance 1 Duty Cycle=0.5 0.2 0.1 0.1 0.05 0.02 Single Pulse 0.01 10 -4 PDM t1 t2 1. R JA (t)=r (t) * R JA 2. R JA=See Datasheet 3. TJM-TA = PDM* R JA (t) 4. Duty Cycle, D=t1/t2 10 -2 10 -3 10 -1 1 10 100 Square Wave Pulse Duration (sec) Figure 13. Normalized Thermal Transient Impedance Curve 5-48 |
Price & Availability of CEM4435
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |