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BSM 35 GD 120 D2
IGBT Power Module Preliminary data * Power module * 3-phase full-bridge * Including fast free-wheel diodes * Package with insulated metal base plate Type BSM 35 GD 120 D2 Maximum Ratings Parameter Collector-emitter voltage Collector-gate voltage Symbol Values 1200 1200 Unit V
VCE
IC
Package SIXPACK 1
Ordering Code C67076-A2506-A17
1200V 50A
VCE VCGR VGE IC
RGE = 20 k
Gate-emitter voltage DC collector current
20 A 50 35
TC = 25 C TC = 80 C
Pulsed collector current, tp = 1 ms
ICpuls
100 70
TC = 25 C TC = 80 C
Power dissipation per IGBT
Ptot
280
W + 150 -55 ... + 150 0.44 0.8 2500 16 11 F 55 / 150 / 56 sec Vac mm K/W C
TC = 25 C
Chip temperature Storage temperature Thermal resistance, chip case Diode thermal resistance, chip case Insulation test voltage, t = 1min. Creepage distance Clearance DIN humidity category, DIN 40 040 IEC climatic category, DIN IEC 68-1
Tj Tstg RthJC RthJCD Vis
-
Semiconductor Group
1
Feb-10-1997
BSM 35 GD 120 D2
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Static Characteristics Gate threshold voltage Values typ. max. Unit
VGE(th)
4.5 5.5 2.7 3.3 0.6 2.4 6.5 3.2 3.9
V
VGE = VCE, IC = 1.2 mA
Collector-emitter saturation voltage
VCE(sat)
-
VGE = 15 V, IC = 35 A, Tj = 25 C VGE = 15 V, IC = 35 A, Tj = 125 C
Zero gate voltage collector current
ICES
1 -
mA
VCE = 1200 V, VGE = 0 V, Tj = 25 C VCE = 1200 V, VGE = 0 V, Tj = 125 C
Gate-emitter leakage current
IGES
150
nA
VGE = 20 V, VCE = 0 V
AC Characteristics Transconductance
gfs
11 2 0.3 0.14 -
S nF -
VCE = 20 V, IC = 35 A
Input capacitance
Ciss Coss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Output capacitance
VCE = 25 V, VGE = 0 V, f = 1 MHz
Reverse transfer capacitance
Crss
-
VCE = 25 V, VGE = 0 V, f = 1 MHz
Semiconductor Group
2
Feb-10-1997
BSM 35 GD 120 D2
Electrical Characteristics, at Tj = 25 C, unless otherwise specified Parameter Symbol min. Switching Characteristics, Inductive Load at Tj = 125 C Turn-on delay time Values typ. max. Unit
td(on)
60 120
ns
VCC = 600 V, VGE = 15 V, IC = 35 A RGon = 39
Rise time
tr
60 120
VCC = 600 V, VGE = 15 V, IC = 35 A RGon = 39
Turn-off delay time
td(off)
400 600
VCC = 600 V, VGE = -15 V, IC = 35 A RGoff = 39
Fall time
tf
50 75
VCC = 600 V, VGE = -15 V, IC = 35 A RGoff = 39
Free-Wheel Diode Diode forward voltage
VF
2.3 1.9 2.8 -
V
IF = 35 A, VGE = 0 V, Tj = 25 C IF = 35 A, VGE = 0 V, Tj = 125 C
Reverse recovery time
trr
0.25 -
s
IF = 35 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/s, Tj = 125 C
Reverse recovery charge
Qrr
C
IF = 35 A, VR = -600 V, VGE = 0 V diF/dt = -800 A/s Tj = 25 C Tj = 125 C
2 5 -
Semiconductor Group
3
Feb-10-1997
BSM 35 GD 120 D2
Power dissipation Ptot = (TC) parameter: Tj 150 C
300 W 260
Safe operating area IC = (VCE) parameter: D = 0, TC = 25C , Tj 150 C
10 3
A
Ptot
240 220 200 180 160 140 120 100 80 60 40 20 0 0
IC
10 2
tp = 18.0s
100 s
10 1
1 ms
10 0
10 ms
DC 10 20 40 60 80 100 120 C 160
-1
10
0
10
1
10
2
10
3
V
TC
VCE
Collector current IC = (TC) parameter: VGE 15 V , Tj 150 C
55 A
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0
IGBT
K/W
IC
45 40 35 30 25 20 15 10 5 0 0 20 40 60 80 100 120 C 160
ZthJC
10 -1
10 -2 D = 0.50 0.20 0.10 10 -3 single pulse 0.05 0.02 0.01
10 -4 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
TC
tp
Semiconductor Group
4
Feb-10-1997
BSM 35 GD 120 D2
Typ. output characteristics
Typ. output characteristics
IC = f (VCE)
parameter: tp = 80 s, Tj = 25 C
70 A 60 17V 15V 13V 11V 9V 7V
IC = f (VCE)
parameter: tp = 80 s, Tj = 125 C
70 A 60 17V 15V 13V 11V 9V 7V
IC
55 50 45 40 35 30 25 20 15 10 5 0 0
IC
55 50 45 40 35 30 25 20 15 10 5 0 0
1
2
3
V
5
1
2
3
V
5
VCE
VCE
Typ. transfer characteristics
IC = f (VGE)
parameter: tp = 80 s, VCE = 20 V
70 A 60
IC
55 50 45 40 35 30 25 20 15 10 5 0 0
2
4
6
8
10
V 14 VGE
Semiconductor Group
5
Feb-10-1997
BSM 35 GD 120 D2
Typ. gate charge VGE = (QGate) parameter: IC puls = 35 A
20 V
Typ. capacitances
C = f (VCE)
parameter: VGE = 0 V, f = 1 MHz
10 1
nF
VGE
16 14 12 10 8
C
Ciss 10 0
600 V
800 V
Coss Crss
10 -1 6 4 2 0 0 10 -2 0
40
80
120
160
nC
220
5
10
15
20
25
30
QGate
V 40 VCE
Reverse biased safe operating area
Short circuit safe operating area
ICpuls = f(VCE) , Tj = 150C parameter: VGE = 15 V
2.5
ICsc = f(VCE) , Tj = 150C parameter: VGE = 15 V, tSC 10 s, L < 50 nH
12
ICpuls/IC
ICsc/IC
8 1.5 6 1.0 4
0.5 2
0.0 0 200 400 600 800 1000 1200 V 1600 VCE
0 0 200 400 600 800 1000 1200 V 1600 VCE
Semiconductor Group
6
Feb-10-1997
BSM 35 GD 120 D2
Typ. switching time
Typ. switching time
I = f (IC) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, RG = 39
10 3
t = f (RG) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, IC = 35 A
10 3 tdoff
t
tdoff ns
t
ns tdon tr
10 2
tr tdon tf
10 2
tf
10 1 0
10
20
30
40
50
60
A IC
80
10 1 0
20
40
60
80
100 120 140
RG
180
Typ. switching losses
Typ. switching losses
E = f (IC) , inductive load , Tj = 125C
par.: VCE = 600 V, VGE = 15 V, RG = 39
20 mWs E 16 14 12 10 8 Eoff 6 4 2 0 0 Eon
E = f (RG) , inductive load , Tj = 125C
par.: VCE = 600V, VGE = 15 V, IC = 35 A
20 mWs E 16 14 Eon 12 10 8 6 4 2 0 0
Eoff
10
20
30
40
50
60
A IC
80
20
40
60
80
100 120 140
RG
180
Semiconductor Group
7
Feb-10-1997
BSM 35 GD 120 D2
Forward characteristics of fast recovery reverse diode IF = f(VF) parameter: Tj
70 A 60
Transient thermal impedance Zth JC = (tp) parameter: D = tp / T
10 0
Diode
K/W
IF
55 50 45 40 35 30 25 20 15 10 5 0 0.0
ZthJC
10 -1
Tj=125C
Tj=25C
D = 0.50 0.20 10 -2 0.10 0.05 single pulse 0.02 0.01
0.5
1.0
1.5
2.0
V
3.0
10 -3 -5 10
10
-4
10
-3
10
-2
10
-1
s 10
0
VF
tp
Semiconductor Group
8
Feb-10-1997
BSM 35 GD 120 D2
Circuit Diagram
Package Outlines Dimensions in mm Weight: 180 g
Semiconductor Group
9
Feb-10-1997

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