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| SKM 100 GB 125 DN Absolute Maximum Ratings Symbol Conditions 1) VCES VCGR IC ICM VGES Ptot Tj, (Tstg) Visol humidity climate IF = -IC IFM = -ICM IFSM I 2t RGE = 20 k Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms per IGBT, Tcase = 25 C AC, 1 min. IEC 60721-3-3 IEC 68 T.1 Tcase = 25/80 C Tcase = 25/80 C; tp = 1 ms tp = 10 ms; sin.; Tj = 150 C tp = 10 ms; Tj = 150 C 1200 1200 100 / 80 200 / 160 20 690 -40 ... + 150 (125) 2500 class 3K7/IE32 40/125/56 95 / 65 200 / 160 720 2600 Values Units V V A A V W C V SEMITRANS(R) M Ultra Fast IGBT Modules SKM 100 GB 125 DN Inverse Diode A A A A2s SEMITRANS 2N (low inductance) Characteristics Symbol Conditions 1) V(BR)CES VGE = 0, IC = 4 mA VGE(th) VGE = VCE, IC = 2 mA ICES Tj = 25 C VGE = 0 VCE = VCES Tj = 125 C IGES VGE = 20 V, VCE = 0 VCEsat VGE = 15 V; IC = 75 A IC = 100 A Tj = 25 C VCEsat gfs VCE = 20 V, IC = 75 A CCHC Cies Coes Cres LCE td(on) tr td(off) tf Eon Eoff VF = VEC VF = VEC VTO rt IRRM Qrr Rthjc Rthjc Rthch per IGBT VGE = 0 VCE = 25 V f = 1 MHz VCC = 600 V VGE = -15 V / +15 V 3) IC = 75 A, ind. load RGon = RGoff = 8 Tj = 125 C min. typ. 5,5 0,1 6 3,3 3,8 max. 6,5 1,5 300 3,65 Units V V mA mA nA V V S pF nF pF pF nH ns ns ns ns mWs mWs VCES 4,5 GB Features * N channel, homogeneous Si * Low inductance case * Short tail current with low temperature dependence * High short circuit capability, self limiting to 6 * Icnom * Fast & soft inverse CAL diodes 8) * Isolated copper baseplate using DCB Direct Copper Bonding Technology * Large clearance (10 mm) and creepage distances (20 mm) Typical Applications * Switched mode power supplies at fsw > 20 kHz * Resonant inverters up to 100 kHz * Inductive heating * Electronic welders at fsw > 20 kHz 1) 2) 3) 8) 31 5 720 380 80 40 360 20 9 3,5 2,0(1,8) 2,25(2,05) 12 27(40) 3(10) 2,5 1,2 15 350 6,6 900 500 25 Inverse Diode 8) IF = 75 A VGE = 0 V; IF = 100 A Tj = 25 (125) C Tj = 125 C Tj = 125 C IF = 75 A; Tj = 25 (125) C 2) IF = 75 A; Tj = 25 (125) C 2) per IGBT per diode per module V V V m A C C/W C/W C/W Thermal characteristics 0,18 0,50 0,05 Tcase = 25 C, unless otherwise specified IF = - IC, VR = 600 V, -diF/dt = 800 A/s, VGE = 0 V Use VGEoff = -5... -15 V CAL = Controlled Axial Lifetime Technology (c) by SEMIKRON 000831 B 6 - 37 SKM 100 GB 125 DN 800 W M100G125 - 1 30 mWs M100G125 - 2 Eon 600 20 Tj = 125 C VCE = 600 V VGE = + 15 V RG = 12 400 10 200 E Ptot 0 0 TC 20 40 60 80 100 120 140 160 C 0 0 IC 20 40 60 80 100 A 120 Eoff Fig. 1 Rated power dissipation Ptot = f (TC) Fig. 2 Turn-on /-off energy = f (IC) M100G125 - 4 40 mWs M100G125 - 3 30 Eon Tj = 125 C VCE = 600 V VGE = + 15 V IC = 75 A 1000 A 100 tp= 10s 100s 1 pulse TC = 25 C Tj 150 C 20 10 1ms Eoff IC 10ms 10 E 0 0R G 20 1 Not for linear use 0,1 40 60 80 1 VCE 10 100 1000 V 10000 Fig. 3 Turn-on /-off energy = f (RG) 2,5 M100G125 - 5 Fig. 4 Maximum safe operating area (SOA) IC = f (VCE) Tj 150 C VGE = 15 V RGoff = 12 IC = 75 A M100G125 - 6 12 2 10 di/dt=1000 A/s 3000 A/s 5000 A/s 8 1,5 6 1 4 0,5 ICpuls/IC 0 0 VCE 200 400 600 800 1000 1200 1400 V 2 ICSC/IC 0 0 200 VCE Tj 150 C VGE = 15 V tsc 10 s L < 25 nH IC = 75 A allowed numbers of short circuits: <1000 time between short circuits: >1s 400 600 800 1000 1200 1400 V Fig. 5 Turn-off safe operating area (RBSOA) B 6 - 38 Fig. 6 Safe operating area at short circuit IC = f (VCE) 000831 (c) by SEMIKRON SKM 100 GB 125 DN 150 A M100G125 - 8 Tj = 150 C VGE 15V 100 50 IC 0 0 TC 20 40 60 80 100 120 140 160 C Fig. 8 Rated current vs. temperature IC = f (TC) 160 A 140 120 100 80 60 40 20 IC 0 0 VCE 1 2 3 4 17V 15V 13V 11V 9V 7V M100G125 - 9 160 A 140 120 100 80 60 40 20 IC 0 17V 15V 13V 11V 9V 7V M100G125 - 10 5 V 6 0 VCE 1 2 3 4 5 V 6 Fig. 9 Typ. output characteristic, tp = 80 s; 25 C Fig. 10 Typ. output characteristic, tp = 80 s; 125 C 150 M100G125 - 12 Pcond(t) = VCEsat(t) * IC(t) VCEsat(t) = VCE(TO)(Tj) + rCE(Tj) * IC(t) A 100 VCE(TO)(Tj) 1,4 + 0,003 (Tj -25) [V] typ.: rCE(Tj) = 0,0253 + 0,000067 (Tj -25) [] max.: rCE(Tj) = 0,0307 + 0,00004 (Tj -25) [] IC 50 valid for VGE = + 15 +2 -1 [V]; IC > 0,3 ICnom 0 0 VG 2 4 6 8 10 V 12 Fig. 11 Saturation characteristic (IGBT) Calculation elements and equations (c) by SEMIKRON Fig. 12 Typ. transfer characteristic, tp = 80 s; VCE = 20 V 000831 B 6 - 39 SKM 100 GB 125 DN 20 V 18 16 14 12 10 8 6 4 600 M100G125 - 13 M100G125.XLS-14 100 ICpuls = 75 A nF VGE = 0 V f = 1 MHz 800V 10 Cies 1 Coes C VGE 2 0 0Q Gate 200 400 600 nC 800 0,1 0 VCE 10 20 V Cres 30 Fig. 13 Typ. gate charge characteristic M100G125 - 15 Fig. 14 Typ. capacitances vs.VCE M100G125 - 16 1000 ns tdoff Tj = 125 C VCE = 600 V VGE = 15 V RGon = 12 RGoff = 12 induct. load 10000 tdoff ns 1000 tdon Tj = 125 C VCE = 600 V VGE = 15 V IC = 75 A induct. load tdon 100 tr 100 tr t 10 0 IC 20 40 60 80 100 t tf 10 120 A 0 RG 20 40 60 tf 80 Fig. 15 Typ. switching times vs. IC M100G125.XLS-17 Fig. 16 Typ. switching times vs. gate resistor RG M100G125 - 18 100 A 80 Tj=25C, typ. Tj=125C, max. 60 Tj=25C, max. 40 Tj=125C, typ. 6 mJ 5 RG= 6 9 VCC = 600 V Tj = 125 C VGE = 15 V 4 12 20 3 60 2 20 IF 0 0 VF 1 2 V 3 1 EoffD 0 0 IF 50 100 A 150 Fig. 17 Typ. CAL diode forward characteristic B 6 - 40 Fig. 18 Diode turn-off energy dissipation per pulse 000831 (c) by SEMIKRON SKM 100 GB 125 DN M100G125 - 19 1 K/W 0,1 K/W M100G125 - 20 1 0,1 0,01 0,001 ZthJC single pulse D=0,50 0,20 0,10 0,05 0,02 0,01 0,01 D=0,5 0,2 0,1 0,05 0,02 0,01 single pulse 0,001 ZthJC 0,0001 0,00001 0,0001 0,00001 0,0001 tp 0,001 0,01 0,1 s 1 tp 0,0001 0,001 0,01 0,1 s 1 Fig. 19 Transient thermal impedance of IGBT ZthJC = f (tp); D = tp / tc = tp * f M100G125 - 22 Fig. 20 Transient thermal impedance of inverse CAL diodes Zthjc = f (tp); D = tp / tc = tp * f M100G125 - 23 120 A RG= 6 VCC = 600 V Tj = 125 C VGE = 15 V 120 A RG= 6 VCC = 600 V Tj = 125 C VGE = 15 V IF = 75 A 80 80 9 9 12 12 20 60 40 40 60 20 IRR 0 0 IF 40 80 A 120 IRR 0 0 diF/dt 2500 A/us 5000 Fig. 22 Typ. CAL diode peak reverse recovery current IRR = f (IF; RG) Fig. 23 Typ. CAL diode peak reverse recovery current IRR = f (di/dt) M100G125 - 24 20 uC 15 12 20 60 RG= 6 I = F 100 A 75 A 56 A 38 A 19 A VCC = 600 V Tj = 125 C VGE = 15 V 9 10 5 Qrr 0 0 diF/dt 2500 A/us 5000 Fig. 24 Typ. CAL diode recovered charge Qrr = f (di/dt) (c) by SEMIKRON 000831 B 6 - 41 SKM 100 GB 125 DN SEMITRANS 2N (low inductance) Case D 93 UL Recognized File no. E 63 532 SKM 100 GB 125 DN Dimensions in mm Case outline and circuit diagram Mechanical Data Symbol Conditions min. M1 M2 a w to heatsink, SI Units to heatsink, US Units for terminals, SI Units for terminals, US Units (M6) (M5) 3 27 2,5 22 - - Values typ. - - - - - - Units max. 5 44 5 44 5x9,81 160 Nm lb.in. Nm lb.in. m/s2 g This is an electrostatic discharge sensitive device (ESDS). Please observe the international standard IEC 747-1, Chapter IX. Eight devices are supplied in one SEMIBOX A without mounting hardware, which can be ordered separately under Ident No. 33321100 (for 10 SEMITRANS 2) Larger packing units of 20 and 42 pieces are used if suitable This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee expressed or implied is made regarding delivery, performance or suitability. B 6 - 42 000831 (c) by SEMIKRON |
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