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Datasheet File OCR Text: |
RLS245 Diodes Switching diode RLS245 !Applications High voltage switching General purpose rectification !External dimensions (Units : mm) !Features 1) Small surface mounting type. (LLDS) 2) VRM=250V guaranteed. 3) High reliability CATHODE BAND (WHITE) 0.4 0.4 1.40.1 +0.2 3.4 -0.1 1.5Max. !Construction Silicon epitaxial planar ROHM : LLDS EIAJ : - JEDEC : LL-34 !Absolute maximum ratings (Ta=25C) Parameter Symbol VRM VR IFM IO Isurge P Tj Tstg Limits 250 220 625 200 1000 300 175 -65~+175 Unit V V mA mA mA mW C C Peak reverse voltage DC reverse voltage Peak forward current Mean rectifying current Surge current (1s) Power dissipation Junction temperature Storage temperature !Electrical characteristics (Ta=25C) Parameter Forward voltage Reverse current Capacitance between terminals Reverse recovery time Symbol VF IR CT trr Min. - - - - Typ. - - - - Max. 1.5 10 3 75 Unit V A pF ns IF=200mA VR=220V VR=0V, f=1MHz IF=20mA, IR =20mA, RL=50 Conditions RLS245 Diodes !Electrical characteristic curves (Ta=25C) 200 100 10 50 20 10 5 2 1 0.5 0.2 0 CAPACITANCE BETWEEN TERMINALS : CT (pF) 100C 1.1 FORWARD CURRENT : IF (mA) REVERSE CURRENT : IR (A) 1.0 75C 1 0.9 50C 0.8 5C 100n Ta=25C Ta=1 2 75C 25C -25C 0.7 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 FORWARD VOLTAGE : VF (V) 10n 0 50 100 150 200 250 300 350 0.6 0 1 2 3 4 5 REVERSE VOLTAGE : VR (V) REVERSE VOLTAGE : VR (V) Fig. 1 Forward characteristics Fig. 2 Reverse characteristics Fig. 3 Capacitance between terminals characteristics 140 REVERSE RECOVERY TIME : trr (ns) SURGE CURRENT : Isurge (A) 120 100 80 60 40 20 0 0 IR=10mA Irr=1mA 14 12 10 8 6 4 2 0 5 10 15 20 25 30 35 1 10 100 1000 FORWARD CURRENT : IF (mA) PULSE WIDTH : Tw (ms) Fig. 4 Reverse recovery time characteristics Fig.5 Surge current characteristics 0.01F D.U.T. 5k PULSE GENERATOR OUTPUT 50 50 SAMPLING OSCILLOSCOPE Fig. 6 Reverse recovery time (trr) measurement circuit |
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