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| 2N2369ADCSM DUAL HIGH SPEED, MEDIUM POWER, NPN SWITCHING TRANSISTOR IN A HERMETICALLY SEALED CERAMIC SURFACE MOUNT PACKAGE MECHANICAL DATA Dimensions in mm (inches) FEATURES 2.29 0.20 (0.09 0.008) 1.65 0.13 (0.065 0.005) 0.64 0.08 (0.025 0.003) 1.40 0.15 (0.055 0.006) * DUAL SILICON PLANAR EPITAXIAL DUAL NPN TRANSISTOR 4.32 0.13 (0.170 0.005) 2.54 0.13 (0.10 0.005) 2 1 3 4 5 * HERMETIC CERAMIC SURFACE MOUNT PACKAGE * SCREENING OPTIONS AVAILABLE A 6 0.23 rad. (0.009) 1.27 0.13 (0.05 0.005) 6.22 0.13 (0.245 0.005) A= LCC2 PACKAGE Underside View PAD 1 - Collector 1 PAD 2 - Base 1 PAD 3 - Base 2 PAD 4 - Collector 2 PAD 5 - Emitter 2 PAD 6 - Emitter 1 APPLICATIONS: Hermetically sealed dual surface mount dual version of the popular 2N2369A for high reliability / space applications requiring small size and low weight devices. ABSOLUTE MAXIMUM RATINGS (TA = 25C unless otherwise stated) VCBO VCEO VEBO IC PD PD TSTG , TJ Collector - Base Voltage Collector - Emitter Voltage Emitter - Base Voltage Collector Current Total Device Dissipation Total Device Dissipation @ TA =25C Derate above 25C @ TC =25C Derate above 25C Operating and Storage Temperature Range PER SIDE TOTAL DEVICE 40V 15V 4.5V 200mA 360mW 2.06mW / C 680mW/C 3.88mW/C 500mW 2.85mW / C 800mW/C 4.57mW/C -65 to +200C Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 3/00 2N2369ADCSM ELECTRICAL CHARACTERISTICS (TA = 25C unless otherwise stated) Parameter V(BR)CEO* V(BR)CBO V(BR)EBO ICES Collector - Base Breakdown Voltage Emitter - Base Breakdown Voltage Collector - Emitter Cut-off Current Test Conditions IC = 10mA IE = 10mA VCE = 20V VCE = 10V TA = +150C VCB = 20V TA = +125C VEB = 4V IC = 10mA IB = 1mA TA = +150C IC = 30mA IC = 100mA IC = 10mA IB = 3mA IB = 10mA TA = +25C TA = +150C TA = -55C IB = 3mA IB = 10mA VCE = 0.35V VCE = 0.40V VCE = 1V TA = -55C IC = 100mA VCE = 1V VCE = 10V IE = 0 IC = 0 IC = 10mA f = 100MHz VCB = 5V VEB = 0.5V IC = 10mA IB1 = -IB2 = 10mA IC = 10mA IB1 = 3mA IB2 = -1.5mA f = 100kHz to 1MHz f = 100kHz to 1MHz Min. 15 40 4.5 Typ. Max. Unit V V V 0.40 0.30 30 0.20 30 0.25 0.20 0.30 0.25 0.43 V mA mA mA Collector - Emitter Breakdown Voltage IC = 10mA ICBO IEBO Collector - Base Cut-off Current Emitter - Base Cut-off Current VCE(sat) Collector - Emitter Saturation Voltage 0.70 0.59 0.85 1.02 0.90 1.20 V VBE(sat) Base - Emitter Saturation Voltage IB = 1mA IC = 30mA IC = 100mA IC = 10mA IC = 30mA 40 30 40 20 20 5 120 120 120 120 10 4 pF 5 13 12 18 ns ns -- -- hFE* Current Gain IC = 10mA |hfe| Cob Cib ts ton toff Magnitude of hfe Output Capacitance Input Capacitance Storage Time Turn-On Time Turn-Off Time * Pulse Test: tp 300ms, d 2%. Semelab plc. Telephone +44(0)1455 556565. Fax +44(0)1455 552612. E-mail: sales@semelab.co.uk Website: http://www.semelab.co.uk Prelim. 3/00 |
Price & Availability of 2N2369ADCSM
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