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| (R) STPS8L30B LOW DROP POWER SCHOTTKY RECTIFIER MAIN PRODUCT CHARACTERISTICS IF(AV) VRRM Tj (max) VF (max) FEATURES AND BENEFITS n 8A 30 V 150 C 0.40 V K A NC DPAK n n LOW COST DEVICE WITH LOW DROP FORWARD VOLTAGE FOR LESS POWER DISSIPATION AND REDUCED HEATSINK OPTIMIZED CONDUCTION/REVERSE LOSSES TRADE-OFF WHICH LEADS TO THE HIGHEST YIELD IN THE APPLICATIONS AVALANCHE CAPABILITY SPECIFIED DESCRIPTION Single Schottky rectifier suited to Switched Mode Power Supplies and high frequency DC to DC converters. Packaged in DPAK, this device is especially intended for use as a Rectifier at the secondary of 3.3V SMPS or DC/DC units. ABSOLUTE RATINGS (limiting values) Symbol VRRM IF(RMS) IF(AV) IFSM IRRM IRSM PARM Tstg Tj dV/dt *: RMS forward current Average forward current Surge non repetitive forward current Repetitive peak reverse current Non repetitive peak reverse current Repetitive peak avalanche power Storage temperature range Maximum junction temperature Critical rate of rise of reverse voltage Tc = 135C = 0.5 tp = 10 ms Sinusoidal tp = 2 s F = 1kHz square tp = 100s tp = 1s square Tj = 25C - 65 to + 150 150 10000 Parameter Repetitive peak reverse voltage Value 30 7 8 75 1 2 Unit V A A A A A W C C V/s dPtot 1 thermal runaway condition for a diode on its own heatsink < dTj Rth( j - a ) 1/4 July 2003 - Ed: 2A STPS8L30B THERMAL RESISTANCES Symbol Rth(j-c) Junction to case Parameter Value 2.5 Unit C/W STATIC ELECTRICAL CHARACTERISTICS Symbol IR * VF * Tests Conditions Reverse leakage current Forward voltage drop Tests Conditions Tj = 25C Tj = 100C Tj = 25C Tj = 125C Tj = 25C Tj = 125C Pulse test : * tp = 380 s, < 2% Min. Typ. 15 Max. 1 40 0.49 Unit mA V VR = VRRM IF = 8 A 0.35 IF = 16 A 0.48 0.4 0.63 0.57 To evaluate the maximum conduction losses use the following equation : P = 0.23 x IF(AV) + 0.021 IF2(RMS) Fig. 1: Average forward power dissipation versus average forward current. PF(av)(W) 5.0 4.0 3.0 2.0 T Fig. 2: Average forward current versus ambient temperature (=0.5). IF(av)(A) = 0.1 = 0.05 = 0.2 = 0.5 9 8 7 6 =1 Rth(j-a)=Rth(j-c) 5 4 3 2 tp Rth(j-a)=70C/W T 1.0 IF(av) (A) 0.0 0 2 4 6 =tp/T 1 0 =tp/T tp Tamb(C) 50 75 100 125 150 8 10 0 25 Fig. 3: Normalized avalanche power derating versus pulse duration. PARM(tp) PARM(1s) 1 Fig. 4: Normalized avalanche power derating versus junction temperature. PARM(tp) PARM(25C) 1.2 1 0.1 0.8 0.6 0.01 0.4 0.2 0.001 0.01 0.1 1 tp(s) 10 100 1000 Tj(C) 0 0 25 50 75 100 125 150 2/4 STPS8L30B Fig. 5: Non repetitive surge peak forward current versus overload duration (maximum values). IM(A) 120 100 80 Tc=25C Fig. 6: Relative variation of thermal impedance junction to ambient versus pulse duration. Zth(j-c)/Rth(j-c) 1.0 0.8 0.6 0.4 = 0.2 = 0.5 60 40 IM Tc=75C Tc=125C 20 0 1E-3 t 0.2 = 0.1 T =0.5 t(s) 1E-2 1E-1 1E+0 0.0 1E-4 Single pulse tp(s) 1E-3 1E-2 =tp/T tp 1E-1 1E+0 Fig. 7: Reverse leakage current versus reverse voltage applied (typical values). IR(mA) 3E+2 1E+2 1E+1 1E+0 1E-1 1E-2 VR(V) 1E-3 0 5 10 15 20 25 30 Tj=25C Tj=150C Fig. 8: Junction capacitance versus reverse voltage applied (typical values). C(pF) 2000 F=1MHz Tj=25C Tj=125C 1000 500 200 VR(V) 100 1 10 40 Fig. 9: Forward voltage drop versus forward current (maximum values). IFM(A) 100.0 10.0 Typical values Tj=150C Tj=125C 1.0 Tj=25C VFM(V) 0.1 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0 3/4 STPS8L30B PACKAGE MECHANICAL DATA DPAK DIMENSIONS REF. A A1 A2 B B2 C C2 D E G H L2 L4 V2 Millimeters Min. Max 2.20 2.40 0.90 1.10 0.03 0.23 0.64 0.90 5.20 5.40 0.45 0.60 0.48 0.60 6.00 6.20 6.40 6.60 4.40 4.60 9.35 10.10 0.80 typ. 0.60 1.00 0 8 Inches Min. Max. 0.086 0.094 0.035 0.043 0.001 0.009 0.025 0.035 0.204 0.212 0.017 0.023 0.018 0.023 0.236 0.244 0.251 0.259 0.173 0.181 0.368 0.397 0.031 typ. 0.023 0.039 0 8 Ordering type STPS8L30B n Marking ST LS30 Package DPAK Weight 0.30g Base qty 75 Delivery mode Tube EPOXY MEETS UL94,V0 Information furnished is believed to be accurate and reliable. However, STMicroelectronics assumes no responsibility for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of STMicroelectronics. Specifications mentioned in this publication are subject to change without notice. This publication supersedes and replaces all information previously supplied. STMicroelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of STMicroelectronics. The ST logo is a registered trademark of STMicroelectronics (c) 2003 STMicroelectronics - Printed in Italy - All rights reserved. STMicroelectronics GROUP OF COMPANIES Australia - Brazil - Canada - China - Finland - France - Germany Hong Kong - India - Israel - Italy - Japan - Malaysia - Malta - Morocco - Singapore Spain - Sweden - Switzerland - United Kingdom - United States. http://www.st.com 4/4 |
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