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| MITSUBISHI TRANSISTOR MODULES QM15TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE QM15TB-2HB * * * * * IC Collector current .......................... 15A VCEX Collector-emitter voltage ......... 1000V hFE DC current gain............................. 250 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION Inverters, Servo drives, DC motor controllers, NC equipment, Welders OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 107 81 20 O P P 21.5 17.5 2-5.5 BuP EuP BvP EvP V BvN EvN BwP EwP W BwN EwN 21.5 BuP EuP BvP EvP BwP EwP 45 21 18 30 U N V W U BuN EuN N O BuN EuN BvN EvN BwN EwN 7.5 14 7.5 14 7.5 16 93 Tab#110, t=0.5 (Fig. 2) Tab#250, t=0.8 (Fig. 1) 1.65 Fig. 1 8 6.35 Fig. 2 3.8 2.8 1.2 28.2 3.4 7.95 7.5 5.5 Note: All Transistor Units are 3-Stage Darlingtons. 1 1 7.1 LABEL 17.5 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso -- -- Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage Mounting torque Weight (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 1000 1000 1000 7 15 15 150 1 150 -40~+150 -40~+125 Charged part to case, AC for 1 minute Mounting screw M5 Typical value 2500 1.47~1.96 15~20 230 Unit V V V V A A W A A C C V N*m kg*cm g ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=1000V, VEB=2V VCB=1000V, Emitter open VEB=7V IC=15A, IB=60mA -IC=15A (diode forward voltage) IC=15A, VCE=3.0V Min. -- -- -- -- -- -- 250 -- VCC=600V, IC=15A, IB1=90mA, IB2=-0.3A -- -- Transistor part (per 1/6 module) Diode part (per 1/6 module) Conductive grease applied (per 1/6 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 1.0 1.0 50 3.0 3.5 1.8 -- 2.0 10 3.0 0.8 2.0 0.35 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 50 2 Tj=25C 40 0mA IB=20 0mA IB=10 A IB=60m DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) 30 DC CURRENT GAIN hFE 10 3 7 5 4 3 2 10 2 7 5 4 3 2 10 0 VCE=5.0V VCE=3.0V 20 IB=20mA 10 IB=10mA 0 0 1 2 3 4 5 Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) 10 0 7 5 4 3 2 10 -1 7 5 4 3 2 10 -2 1.8 2.2 2.6 3.0 3.4 3.8 Tj=25C VCE=3.0V SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0 BASE CURRENT IB (A) VBE(sat) SATURATION VOLTAGE VCE(sat) IB=60mA Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 2 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) ton, ts, tf (s) 4 3 SWITCHING TIME IC=20A 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 0 ts tf 2 IC=10A 1 Tj=25C Tj=125C 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 IC=15A ton IB1=90mA IB2=-300mA Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 2 COLLECTOR CURRENT IC (A) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 VCC=600V IB1=90mA IC=15A Tj=25C Tj=125C ts, tf (s) REVERSE BIAS SAFE OPERATING AREA 32 28 24 20 16 12 8 4 0 0 200 400 600 800 1000 VCE (V) IB2=-2.5A Tj=125C ts SWITCHING TIME tf 2 3 4 5 7 10 0 2 3 4 5 7 10 1 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE FORWARD BIAS SAFE OPERATING AREA 10 2 7 5 3 2 10 1 7 5 3 2 D C DERATING FACTOR OF F. B. S. O. A. 100 COLLECTOR CURRENT IC (A) 200s 1m s 100s DERATING FACTOR (%) 500 90 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 10 0 7 TC=25C 5 NON-REPETITIVE 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 710 1 1.0 s 80 100 120 140 160 TC (C) CASE TEMPERATURE 0.8 Zth (j-c) (C/ W) 0.6 10 2 7 5 4 3 2 10 1 7 5 4 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) Tj=25C Tj=125C 0.4 0.2 0 10 -3 2 3 4 5 7 10 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) 10 0 0.4 0.8 1.2 1.6 2.0 2.4 COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM15TB-2HB MEDIUM POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 200 180 160 Irr (A), Qrr (c) 140 120 100 80 60 40 20 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 10 0 10 1 Irr Qrr trr 10 0 2 3 4 5 7 10 1 10 -1 2 3 4 5 7 10 2 VCC=600V IB1=90mA IB2=-300mA Tj=25C Tj=125C CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2.0 1.6 Zth (j-c) (C/ W) 1.2 0.8 0.4 0 10 -3 2 3 4 5 710 -2 2 3 4 5 7 10 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 trr (s) |
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