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MITSUBISHI TRANSISTOR MODULES QM150CY-H HIGH POWER SWITCHING USE INSULATED TYPE QM150CY-H * * * * * IC Collector current ........................ 150A VCEX Collector-emitter voltage ........... 600V hFE DC current gain............................... 75 Insulated Type UL Recognized Yellow Card No. E80276 (N) File No. E80271 APPLICATION UPS, CVCF OUTLINE DRAWING & CIRCUIT DIAGRAM Dimensions in mm 6 23 95 80 23 23.5 6 5.5 B2X B2 E2 E2 E1 B1X E1 B1 6 12 6 21.5 B2X 62 48 30 C2 E2E1 C1 B2 E2 C2 C1 B1X E1 B1 M5 Tab#110, t=0.5 7 30 LABEL 21 12 Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150CY-H HIGH POWER SWITCHING USE INSULATED TYPE ABSOLUTE MAXIMUM RATINGS Symbol VCEX (SUS) VCEX VCBO VEBO IC -IC PC IB -ICSM Tj Tstg Viso Parameter Collector-emitter voltage Collector-emitter voltage Collector-base voltage Emitter-base voltage Collector current Collector reverse current Collector dissipation Base current Surge collector reverse current (forward diode current) Junction temperature Storage temperature Isolation voltage (Tj=25C, unless otherwise noted) Conditions IC=1A, VEB=2V VEB=2V Emitter open Collector open DC DC (forward diode current) TC=25C DC Peak value of one cycle of 60Hz (half wave) Ratings 600 600 600 7 150 150 690 9 1500 -40~+150 -40~+125 Charged part to case, AC for 1 minute Main terminal screw M5 2500 1.47~1.96 15~20 1.47~1.96 15~20 420 Unit V V V V A A W A A C C V N*m kg*cm N*m kg*cm g -- Mounting torque Mounting screw M5 -- Weight Typical value ELECTRICAL CHARACTERISTICS Symbol ICEX ICBO IEBO VCE (sat) VBE (sat) -VCEO hFE ton ts tf Rth (j-c) Q Rth (j-c) R Rth (c-f) Thermal resistance (junction to case) Contact thermal resistance (case to fin) Switching time Parameter Collector cutoff current Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage Base-emitter saturation voltage Collector-emitter reverse voltage DC current gain (Tj=25C, unless otherwise noted) Limits Test conditions VCE=600V, VEB=2V VCB=600V, Emitter open VEB=7V IC=150A, IB=2A -IC=150A (diode forward voltage) IC=150A, VCE=2V/5V Min. -- -- -- -- -- -- 75/100 -- VCC=300V, IC=150A, IB1=-IB2=3A -- -- Transistor part (per 1/2 module) Diode part (per 1/2 module) Conductive grease applied (per 1/2 module) -- -- -- Typ. -- -- -- -- -- -- -- -- -- -- -- -- -- Max. 2.0 2.0 150 2.0 2.5 1.85 -- 2.5 12 3.0 0.18 0.6 0.1 Unit mA mA mA V V V -- s s s C/ W C/ W C/ W Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150CY-H HIGH POWER SWITCHING USE INSULATED TYPE PERFORMANCE CURVES COMMON EMITTER OUTPUT CHARACTERISTICS (TYPICAL) 300 Tj=25C IB=3.0A 240 IB=2.0A 180 IB=1.0A IB=0.5A 120 10 3 7 5 3 2 10 2 7 5 3 2 10 1 DC CURRENT GAIN VS. COLLECTOR CURRENT (TYPICAL) COLLECTOR CURRENT IC (A) VCE=5.0V VCE=2.0V DC CURRENT GAIN hFE Tj=25C Tj=125C 60 IB=0.1A 0 0 1 2 3 4 5 7 5 3 2 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE VCE (V) COLLECTOR CURRENT IC (A) BASE CURRENT IB (A) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 1.0 1.4 1.8 2.2 VCE (sat), VBE (sat) (V) COMMON EMITTER INPUT CHARACTERISTIC (TYPICAL) SATURATION VOLTAGE CHARACTERISTICS (TYPICAL) 10 1 7 5 4 3 2 10 0 7 5 4 3 2 10 -1 VCE=2.0V Tj=25C VBE(sat) VCE(sat) SATURATION VOLTAGE IB=2A Tj=25C Tj=125C 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 2.6 3.0 BASE-EMITTER VOLTAGE VBE (V) COLLECTOR CURRENT IC (A) COLLECTOR-EMITTER SATURATION VOLTAGE (TYPICAL) COLLECTOR-EMITTER SATURATION VOLTAGE VCE (sat) (V) 5 4 SWITCHING TIME VS. COLLECTOR CURRENT (TYPICAL) 10 2 7 5 3 2 10 1 7 5 3 2 VCC=300V IB1=-IB2=3A Tj=25C Tj=125C ton, ts, tf (s) Tj=25C Tj=125C ts 3 2 IC=200A 1 IC=50A IC=100A IC=150A SWITCHING TIME 0 10 -1 2 3 4 5 710 0 2 3 4 5 7 10 1 2 3 45 7 10 2 10 0 ton tf 7 5 3 2 10 -1 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 BASE CURRENT IB (A) COLLECTOR CURRENT IC (A) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150CY-H HIGH POWER SWITCHING USE INSULATED TYPE SWITCHING TIME VS. BASE CURRENT (TYPICAL) 2 10 1 7 5 4 3 2 REVERSE BIAS SAFE OPERATING AREA 400 Tj=125C ts, tf (s) ts COLLECTOR CURRENT IC (A) 300 IB2=-2A 200 IB2=-5A SWITCHING TIME tf 10 0 VCC=300V 7 IC=150A 5 IB1=3A 4 Tj=25C 3 Tj=125C 2 10 -1 2 3 4 5 7 10 0 100 2 3 4 5 7 10 1 0 0 200 400 600 800 BASE REVERSE CURRENT -IB2 (A) COLLECTOR-EMITTER VOLTAGE VCE (V) FORWARD BIAS SAFE OPERATING AREA 10 3 7 5 3 2 100 90 DERATING FACTOR OF F. B. S. O. A. COLLECTOR CURRENT IC (A) tw=50S 100S DERATING FACTOR (%) 10 2 7 5 3 2 50 0 1m S S S 80 70 60 50 40 30 20 10 0 0 20 40 60 COLLECTOR DISSIPATION SECOND BREAKDOWN AREA 10 m 10 1 7 5 3 TC=25C 2 NON-REPETITIVE 10 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 COLLECTOR-EMITTER VOLTAGE COLLECTOR REVERSE CURRENT -IC (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (TRANSISTOR) 10 0 2 3 4 5 7 10 1 2 3 0.2 0.16 DC 80 100 120 140 160 VCE (V) CASE TEMPERATURE TC (C) 10 7 5 3 2 REVERSE COLLECTOR CURRENT VS. COLLECTOR-EMITTER REVERSE VOLTAGE (DIODE FORWARD CHARACTERISTICS) (TYPICAL) 3 Zth (j-c) (C/ W) 0.12 0.08 10 2 7 5 3 2 10 1 7 5 3 2 10 0 0 0.4 0.8 1.2 0.04 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 Tj=25C Tj=125C 1.6 2.0 TIME (s) COLLECTOR-EMITTER REVERSE VOLTAGE -VCEO (V) Feb.1999 MITSUBISHI TRANSISTOR MODULES QM150CY-H HIGH POWER SWITCHING USE INSULATED TYPE RATED SURGE COLLECTOR REVERSE CURRENT (DIODE FORWARD SURGE CURRENT) SURGE COLLECTOR REVERSE CURRENT -ICSM (A) 1600 1400 1200 REVERSE RECOVERY CHARACTERISTICS OF FREE-WHEEL DIODE (TYPICAL) 10 3 10 2 7 VCC=300V 5 IB1=-IB2=3.0A 3 Tj=25C 2 Tj=125C 10 2 10 1 7 5 3 2 Qrr Irr 10 1 10 0 7 5 3 trr 2 0 10 -1 10 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 2 3 4 5 7 10 3 1000 800 600 400 200 0 10 0 2 3 4 5 7 10 1 2 3 4 5 7 10 2 Irr (A), Qrr (c) CONDUCTION TIME (CYCLES AT 60Hz) FORWARD CURRENT IF (A) TRANSIENT THERMAL IMPEDANCE CHARACTERISTIC (DIODE) 10 0 2 3 4 5 7 10 1 2 3 4 5 1.0 0.8 Zth (j-c) (C/ W) 0.6 0.4 0.2 0 10 -3 2 3 4 5 710 -2 2 3 4 5 710 -1 2 3 4 5 7 10 0 TIME (s) Feb.1999 trr (s) |
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